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Research Article

Highly sensitive and stable β-Ga2O3 DUV phototransistor with local back-gate structure and its neuromorphic application

Xiao-Xi Li1, Guang Zeng1, Yu-Chun Li1, Qiu-Jun Yu1, Meng-Yang Liu1, Li-Yuan Zhu1, Wenjun Liu1(), Ying-Guo Yang1,2(), David Wei Zhang1, Hong-Liang Lu1 ()
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute & Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China
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The fabricated β-Ga2O3 phototransistor with local back-gate structure exhibits a high responsivity of 1.01 × 107 A/W. The first-principles calculations reveal the decent stability of β-Ga2O3 nanosheet against oxidation and humidity without significant performance degradations.

Abstract

Deep ultraviolet (DUV) phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor, military detector, oil spill detection, biological sensor, and artificial intelligence fields. In order to further improve the responsivity of UV photodetectors based on β-Ga2O3, in present work, high-performance β-Ga2O3 phototransistors with local back-gate structure were experimentally demonstrated. The phototransistor shows excellent DUV photoelectrical performance with a high responsivity of 1.01 × 107 A/W, a high external quantum efficiency of 5.02 × 109%, a sensitive detectivity of 2.98 × 1015 Jones, and a fast rise time of 0.2 s under 250 nm illumination. Besides, first-principles calculations reveal the decent stability of β-Ga2O3 nanosheet against oxidation and humidity without significant performance degradations. Additionally, the hexagonal boron nitride (h-BN)/β-Ga2O3 phototransistor can behave as a photonic synapse with ultralow power consumption of ~ 9.6 fJ per spike, which shows its potential for neuromorphic computing tasks such as facial recognition. This β-Ga2O3 phototransistor will provide a perspective for the next generation optoelectrical systems.

Keywords

β-Ga2O3 phototransistorslocal back-gateresponsivitystabilityphotonic synapse

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Nano Research
Volume 15 Issue 10,
October 2022
Pages 9359-9367
DOI: 10.1007/s12274-022-4574-1
Cite this article:
Li X-X, Zeng G, Li Y-C, et al. Highly sensitive and stable β-Ga2O3 DUV phototransistor with local back-gate structure and its neuromorphic application. Nano Research, 2022, 15(10): 9359-9367. https://doi.org/10.1007/s12274-022-4574-1
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