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Research Article

Observation of interlayer excitons in trilayer type-II transition metal dichalcogenide heterostructures

Biao Wu1,2, Haihong Zheng1,2, Junnan Ding1,2, Yunpeng Wang1, Zongwen Liu3, Yanping Liu1,2,4()
School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, Changsha 410083, China
State Key Laboratory of High-Performance Complex Manufacturing, Central South University, Changsha 410083, China
School of Chemical and Biomolecular Engineering, The University of Sydney, NSW 2006, Australia
Shenzhen Research Institute of Central South University, Shenzhen 518057, China
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We successfully observed the interlayer excitons in the trilayer type-II heterostructure and confirmed the source of the interlayer excitons.

Abstract

Vertically stacked transition metal dichalcogenide (TMD) heterostructures provide an opportunity to explore optoelectronic properties within the two-dimensional limit. In such structures, spatially indirect interlayer excitons (IXs) can be generated in adjacent layers because of strong Coulomb interactions. However, due to the complexity of the multilayered heterostructure (HS), the capture and study of the IXs in trilayer type-II HSs have so far remained elusive. Here, we present the observation of the IXs in trilayer type-II staggered band alignment of MoS2/MoSe2/WSe2 van der Waals (vdW) HSs by photoluminescence (PL) spectroscopy. The central energy of IX is 1.33 eV, and the energy difference between the extracted double peaks is 23 meV. We confirmed the origin of IX through PL properties and calculations by the density functional theory, we also studied the dependence of the IX emission peak on laser power and temperature. Furthermore, the polarization-resolved PL spectra of HS were also investigated, and the maximum polarizability of the emission peak of WSe2 reached 11.40% at 6 K. Our findings offer opportunities for the study of new physical properties of excitons in TMD HSs and therefore are valuable for exploring the potential applications of TMDs in optoelectronic devices.

Keywords

transition metal dichalcogenidesinterlayer excitontype-II band alignmenttrilayer heterostructure

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Nano Research
Volume 15 Issue 10,
October 2022
Pages 9588-9594
DOI: 10.1007/s12274-022-4580-3
Cite this article:
Wu B, Zheng H, Ding J, et al. Observation of interlayer excitons in trilayer type-II transition metal dichalcogenide heterostructures. Nano Research, 2022, 15(10): 9588-9594. https://doi.org/10.1007/s12274-022-4580-3
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