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Research Article

Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO3-CeO2 films

Xiaobing Yan1,§(), Hongwei Yan1,§, Gongjie Liu1, Jianhui Zhao1(), Zhen Zhao1, Hong Wang1, Haidong He1, Mengmeng Hao1, Zhaohua Li1, Lei Wang1, Wei Wang1, Zixuan Jian1, Jiaxin Li1, Jingsheng Chen2()
Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China
Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore

§ Xiaobing Yan and Hongwei Yan contributed equally to this work.

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The ferroelectric memristors based self-assembled vertically aligned nano-composites BaTiO3-CeO2 on silicon could increase the Curie temperatures to stabilize the performance of ferroelectric memristor due to higher in-plane compressive strain. In addition, this device not only mimics the artificial synaptic function, but also has up to 86.78% digits recognition ability in a single-layer perceptron model.

Abstract

Ferroelectric memristors, as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era, have the comprehensive function of simulating brain storage and calculation. However, due to the high dielectric loss of traditional ferroelectric materials, the durability of ferroelectric memristors and Si based integration have a great challenge. Here, we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nano-composites BaTiO3(BTO)-CeO2 films. The BTO-CeO2 memristors exhibit a stable resistance switching behavior at a high temperature of 100 °C due to higher Curie temperatures of BTO-CeO2 films with in-plane compressive strain. And the endurance of the device can reach the order of magnitude of 1 × 106 times. More importantly, the device has excellent functions for simulating artificial synaptic behavior, including excitatory post-synaptic current, paired-pulse facilitation, paired-pulse depression, spike-time-dependent plasticity, and short and long-term plasticity. Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model, in which recognition accuracy of digital can reach 86.78% after 20 training iterations. These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.

Keywords

ferroelectric memristorself-assembled BaTiO3-CeO2synaptic behavior

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Nano Research
Volume 15 Issue 10,
October 2022
Pages 9654-9662
DOI: 10.1007/s12274-022-4604-z
Cite this article:
Yan X, Yan H, Liu G, et al. Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO3-CeO2 films. Nano Research, 2022, 15(10): 9654-9662. https://doi.org/10.1007/s12274-022-4604-z
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