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Research Article

Edge reconstruction of layer-dependent β-In2Se3/MoS2 vertical heterostructures for accelerated hydrogen evolution

Gonglei Shao1,2,§, Meiqing Yang3,§, Haiyan Xiang2, Song Luo2, Xiong-Xiong Xue4, Huimin Li2, Xu Zhang1, Song Liu2( ), Zhen Zhou1,5 ( )
Engineering Research Center of Advanced Functional Material Manufacturing of Ministry of Education, School of Chemical Engineering, Zhengzhou University, Zhengzhou 450001, China
Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
College of Life and Environmental Science, Hunan University of Arts and Science, Changde 415000, China
School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China
Institute of New Energy Material Chemistry, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China

§ Gonglei Shao and Meiqing Yang contributed equally to this work.

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Graphical Abstract

Layer-by-layer deposited β-In2Se3 from 1 to 13 L on monolayer MoS2 forms vertical β-In2Se3/MoS2 heterostructures. Attributed to abundant layer-dependent edge active sites, edge reconstruction, improved hydrophilicity and high electrical conductivity of β-In2Se3/MoS2 heterostructures, excellent electrocatalytic hydrogen evolution performance with lower onset potential (77.3 mV) and smaller Tafel slope (47.1 mV·dec–1) can be observed at the edge of monolayer MoS2 coupled with 13-L β-In2Se3.

Abstract

The layer-dependent properties are still unclarified in two-dimensional (2D) vertical heterostructures. In this study, we layer-by-layer deposited semimetal β-In2Se3 on monolayer MoS2 to form vertical β-In2Se3/MoS2 heterostructures by chemical vapor deposition. The defect-mediated nucleation mechanism induces β-In2Se3 nanosheets to grow on monolayer MoS2, and the layer number of stacked β-In2Se3 can be precisely regulated from 1 layer (L) to 13 L by prolonging the growth time. The β-In2Se3/MoS2 heterostructures reveal tunable type-Ⅱ band alignment arrangement by altering the layer number of β-In2Se3, which optimizes the internal electron transfer. Meanwhile, the edge atomic structure of β-In2Se3 stacking on monolayer MoS2 shows the reconstruction derived from large lattice mismatch (~ 29%), and the presence of β-In2Se3 also further increases the electrical conductivity of β-In2Se3/MoS2 heterostructures. Attributed to abundant layer-dependent edge active sites, edge reconstruction, improved hydrophilicity, and high electrical conductivity of β-In2Se3/MoS2 heterostructures, the edge of β-In2Se3/MoS2 heterostructures exhibits excellent electrocatalytic hydrogen evolution performance. Lower onset potential and smaller Tafel slope can be observed at the edge of monolayer MoS2 coupled with 13-L β-In2Se3. Hence, the outstanding conductive layers coupled with edge reconstruction in 2D vertical heterostructures play decisive roles in the optimization of electron energy levels and improvement of layer-dependent catalytic performance.

Keywords

In2Se3/MoS2 heterostructureedge reconstructionlayer dependenthydrogen evolution reactionmicroreactor

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Nano Research
Volume 16 Issue 1,
January 2023
Pages 1670-1678
DOI: 10.1007/s12274-022-4716-5
Cite this article:
Shao G, Yang M, Xiang H, et al. Edge reconstruction of layer-dependent β-In2Se3/MoS2 vertical heterostructures for accelerated hydrogen evolution. Nano Research, 2023, 16(1): 1670-1678. https://doi.org/10.1007/s12274-022-4716-5
Topics:
CatalyticNano deviceEnergySemiconductors

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Received: 16 April 2022
Revised: 25 June 2022
Accepted: 29 June 2022
Published: 10 August 2022
© Tsinghua University Press 2022
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