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IrO2 exhibits good stability but limited electrocatalytic activity for oxygen evolution reaction in acid. Defect engineering is an effective strategy to improve the intrinsic ability of electrocatalysts by tailoring their electronic structure. Herein, we have successfully synthesized IrO2/Ir heterophase with compressive strain and metal vacancies via a simple substitution-etching method. In virtue of the solubility of Cr in strong alkali, metal vacancies could be formed at surface after etching Cr-doped IrO2/Ir in alkali, which leaded to modulated electronic structure. Meanwhile, the substitution of Cr with smaller atom radius would induce the formation of compressive strain and the relocated atoms made the d-band center shifted. With the regulated electronic structure and tuned d-band center, the obtained electrocatalyst only needed 285 mV to reach 10 mA·cm−2 in 0.1 M HClO4. Reaction kinetic has been rapidly accelerated as indicated by the smaller Tafel slope and charge transfer resistance. Theoretical calculations revealed that the d-band center and charge density distribution have been regulated with the introduction of defects in IrO2/Ir, which significantly decreased the free energy barrier of rate determining step. This work provides a valuable reference to design effective and defects-rich electrocatalysts.
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