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Research Article

Memristive switching in two-dimensional BiSe crystals

Wenda Ma1,2, Junfeng Lu3,4, Shuaipeng Ge1,2, Li Zhang2, Fengchang Huang2, Naiwei Gao1,2, Peiguang Yan1( ), Caofeng Pan1,2( )
College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, China
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Graphical Abstract

The memristive switching behavior is firstly discovered in intrinsic two-dimensional BiSe crystals, which is attributed to the forming of Bi filaments. The BiSe devices exhibit nonvolatile bipolar resistance switching, volatile switching, and electrical bistable behavior in different conditions.

Abstract

In spite of the explosive rise of research on memristive switching, more improvements in tunability, versatility, and hetero-integration are required through the discovery and application of novel materials. Herein, we report resistance switching in nano-thick two-dimensional (2D) crystals of bismuth selenium (BiSe). The BiSe devices exhibit nonvolatile bipolar resistance switching, volatile switching, and electrical bistable behavior in different conditions. The different memristive behavior of BiSe devices may be related to the concentration of Bi ions in this Bi-rich structure, which directly affects the capability of filaments forming. Furthermore, the external mechanical strain is applied in modulation of multi-layer BiSe devices. The memristive BiSe devices show a large on/off ratio of ~ 104 and retention time of ~ 104 s. The discovery of memristive switching behavior in multi-layer BiSe is attributed to the forming of Bi filaments. The resistance switching behavior in multi-layer BiSe demonstrates the potential application in the flexible memories and functional integrated devices.

Keywords

bismuth seleniumheterostructureresistance switchingmemristorsflexible memoriesstrain engineering

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Nano Research
Volume 16 Issue 2,
February 2023
Pages 3188-3194
DOI: 10.1007/s12274-022-4974-2
Cite this article:
Ma W, Lu J, Ge S, et al. Memristive switching in two-dimensional BiSe crystals. Nano Research, 2023, 16(2): 3188-3194. https://doi.org/10.1007/s12274-022-4974-2
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Received: 17 June 2022
Revised: 01 August 2022
Accepted: 28 August 2022
Published: 21 October 2022
© Tsinghua University Press 2022
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