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Research Article

All-atomristor logic gates

Shu Wang1,§, Zhican Zhou1,§, Fengyou Yang1,§, Shengyao Chen1,2, Qiaoxuan Zhang3, Wenqi Xiong4, Yusong Qu1, Zhongchang Wang5, Cong Wang6( ), Qian Liu1,2( )
CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China
MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China
Electrical Automation Department, Hebei University of Water Resources and Electric Engineering, Cangzhou 061001, China
School of Physics and Technology, Wuhan University, Wuhan 430072, China
International Iberian Nanotechnology Laboratory (INL), Braga 4715-330, Portugal
College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China

§ Shu Wang, Zhican Zhou, and Fengyou Yang contributed equally to this work.

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Graphical Abstract

All-atomristor logic gates are realized for the first time based on high-performance atomristors built by monolayer MoS2 with a moderate defect concentration. Fabricated logical gates possess a strong logic computing ability and demonstrate considerable applicability in combinational logic circuits, crossbar array, and binary neural networks.

Abstract

The atomristor (monolayer two-dimensional (2D)-material memristor) is competitive in high-speed logic computing due to its binary feature, lower energy consumption, faster switch response, and so on. Yet to date, all-atomristor logic gates used for logic computing have not been reported due to the poor consistency of different atomristors in performance. Here, by studying band structures and electron transport properties of MoS2 atomristor, a comprehensive memristive mechanism is obtained. Guided by the simulation results, monolayer MoS2 with moderated defect concentration has been fabricated in the experiment, which can build atomristors with high performance and good consistency. Based on this, for the first time, MoS2 all-atomristor logic gates are realized successfully. As a demonstration, a half-adder based on the logic gates and a binary neural network (BNN) based on crossbar arrays are evaluated, indicating the applicability in various logic computing circumstances. Owing to shorter transition time and lower energy consumption, all-atomristor logic gates will open many new opportunities for next-generation logic computing and data processing.

Keywords

atomristorlogic gatescombinational logic circuitneural networkdefect concentration

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References

[1]

Shalf, J. The future of computing beyond Moore’s law. Philos. Trans. Roy. Soc. A 2020, 378, 20190061.
Crossref Google Scholar
[2]

Leiserson, C. E.; Thompson, N. C.; Emer, J. S.; Kuszmaul, B. C.; Lampson, B. W.; Sanchez, D.; Schardl, T. B. There’s plenty of room at the Top: What will drive computer performance after Moore’s law? Science 2020, 368, eaam9744.
Crossref Google Scholar
[3]

Theis, T. N.; Wong, H. S. P. The end of moore’s law: A new beginning for information technology. Comput. Sci. Eng. 2017, 19, 41–50.
Crossref Google Scholar
[4]

Sebastian, A.; Le Gallo, M.; Khaddam-Aljameh, R.; Eleftheriou, E. Memory devices and applications for in-memory computing. Nat. Nanotechnol. 2020, 15, 529–544.
Crossref Google Scholar
[5]

Shi, T.; Wang, R.; Wu, Z. H.; Sun, Y. Z.; An, J. J.; Liu, Q. A review of resistive switching devices: Performance improvement, characterization, and applications. Small Struct. 2021, 2, 2000109.
Crossref Google Scholar
[6]

Zidan, M. A.; Strachan, J. P.; Lu, W. D. The future of electronics based on memristive systems. Nat. Electron. 2018, 1, 22–29.
Crossref Google Scholar
[7]

Gao, L. G.; Alibart, F.; Strukov, D. B. Programmable CMOS/memristor threshold logic. IEEE Trans. Nanotechnol. 2013, 12, 115–119.
Crossref Google Scholar
[8]

Rose, G. S.; Rajendran, J.; Manem, H.; Karri, R.; Pino, R. E. Leveraging memristive systems in the construction of digital logic circuits. Proc. IEEE 2012, 100, 2033–2049.
Crossref Google Scholar
[9]

Yang, J. J.; Pickett, M. D.; Li, X. M.; Ohlberg, D. A. A.; Stewart, D. R.; Williams, R. S. Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 2008, 3, 429–433.
Crossref Google Scholar
[10]

Guo, Z. N.; Cao, R.; Wang, H. D.; Zhang, X.; Meng, F. X.; Chen, X.; Gao, S. Y.; Sang, D. K.; Nguyen, T. H.; Duong, A. T. et al. High-performance polarization-sensitive photodetectors on two-dimensional β-InSe. Natl. Sci. Rev. 2022, 9, nwab098.
Crossref Google Scholar
[11]

Zhang, Y.; Huang, P.; Guo, J.; Shi, R. C.; Huang, W. C.; Shi, Z.; Wu, L. M.; Zhang, F.; Gao, L. F.; Li, C. et al. Graphdiyne-based flexible photodetectors with high responsivity and detectivity. Adv. Mater. 2020, 32, 2001082.
Crossref Google Scholar
[12]

Jin, J. Y.; Wang, Z. P.; Peng, Z. S.; Liu, H.; Peng, K.; Wei, H. N.; Wang, Y.; Xu, Y. S.; Wei, H.; Chu, W. G. et al. Multifunctional dual gated coupling device using van der Waals ferroelectric heterostructure. Adv. Electron. Mater. 2022, 8, 2200210.
Crossref Google Scholar
[13]

Gao, L. F.; Ma, C. Y.; Wei, S. R.; Kuklin, A. V.; Zhang, H.; Ågren, H. Applications of few-layer Nb2C MXene: Narrow-band photodetectors and femtosecond mode-locked fiber lasers. ACS Nano 2021, 15, 954–965.
Crossref Google Scholar
[14]

Qiao, H.; Huang, Z. Y.; Ren, X. H.; Liu, S. H.; Zhang, Y. P.; Qi, X.; Zhang, H. Self-powered photodetectors based on 2D materials. Adv. Opt. Mater. 2020, 8, 1900765.
Crossref Google Scholar
[15]

Fan, T. J.; Xie, Z. J.; Huang, W. C.; Li, Z. J.; Zhang, H. Two-dimensional non-layered selenium nanoflakes: Facile fabrications and applications for self-powered photo-detector. Nanotechnology 2019, 30, 114002.
Crossref Google Scholar
[16]

Guo, Z. N.; Zeng, Y. H.; Meng, F. X.; Qu, H. Z.; Zhang, S. L.; Hu, S. P.; Fan, S. D.; Zeng, H. B.; Cao, R.; Prasad, P. N. et al. In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor. eLight 2022, 2, 9.
Crossref Google Scholar
[17]

Ge, R. J.; Wu, X. H.; Liang, L. B.; Hus, S. M.; Gu, Y. Q.; Okogbue, E.; Chou, H.; Shi, J. P.; Zhang, Y. F.; Banerjee, S. K. et al. A library of atomically thin 2D materials featuring the conductive-point resistive switching phenomenon. Adv. Mater. 2021, 33, 2007792.
Crossref Google Scholar
[18]

Ge, R. J.; Wu, X. H.; Kim, M.; Shi, J. P.; Sonde, S.; Tao, L.; Zhang, Y. F.; Lee, J. C.; Akinwande, D. Atomristor: Nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides. Nano Lett. 2018, 18, 434–441.
Crossref Google Scholar
[19]

Kim, M.; Ducournau, G.; Skrzypczak, S.; Yang, S. J.; Szriftgiser, P.; Wainstein, N.; Stern, K.; Happy, H.; Yalon, E.; Pallecchi, E. et al. Monolayer molybdenum disulfide switches for 6G communication systems. Nat. Electron. 2022, 5, 367–373.
Crossref Google Scholar
[20]

Zhou, Z. C.; Yang, F. Y.; Wang, S.; Wang, L.; Wang, X. F.; Wang, C.; Xie, Y.; Liu, Q. Emerging of two-dimensional materials in novel memristor. Front. Phys. 2022, 17, 23204.
Crossref Google Scholar
[21]

Wu, X. H.; Ge, R. J.; Chen, P. A.; Chou, H.; Zhang, Z. P.; Zhang, Y. F.; Banerjee, S.; Chiang, M. H.; Lee, J. C.; Akinwande, D. Thinnest nonvolatile memory based on monolayer h-BN. Adv. Mater. 2019, 31, 1806790.
Crossref Google Scholar
[22]

Kim, M.; Ge, R. J.; Wu, X. H.; Lan, X.; Tice, J.; Lee, J. C.; Akinwande, D. Zero-static power radio-frequency switches based on MoS2 atomristors. Nat. Commun. 2018, 9, 2524.
Crossref Google Scholar
[23]
Ge, R. J.; Wu, X. H.; Kim, M.; Chen, P. A.; Shi, J. P.; Choi, J.; Li, X. Q.; Zhang, Y. F.; Chiang, M. H.; Lee, J. C. et al. Atomristors: Memory effect in atomically-thin sheets and record RF switches. In 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2018, pp 22.6.1–22.6.4.
[24]

Hus, S. M.; Ge, R. J.; Chen, P. A.; Liang, L. B.; Donnelly, G. E.; Ko, W.; Huang, F. M.; Chiang, M. H.; Li, A. P.; Akinwande, D. Observation of single-defect memristor in an MoS2 atomic sheet. Nat. Nanotechnol. 2021, 16, 58–62.
Crossref Google Scholar
[25]
Kvatinsky, S.; Wald, N.; Satat, G.; Kolodny, A.; Weiser, U. C.; Friedman, E. G. MRL—Memristor ratioed logic. In 2012 13th International Workshop on Cellular Nanoscale Networks and their Applications, Turin, Italy, 2012, pp 1–6.
[26]

Lee, M. J.; Lee, S.; Lee, S.; Balamurugan, K.; Yoon, C.; Jang, J. T.; Kim, S. H.; Kwon, D. H.; Kim, M.; Ahn, J. P. et al. Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4). NPG Asia Mater. 2018, 10, 23–30.
Crossref Google Scholar
[27]

Li, Y.; Cui, Z. J.; He, Y. W.; Tian, H.; Yang, T. C.; Shou, C. Y.; Liu, J. L. Resistive switching properties of monolayer h-BN atomristors with different electrodes. Appl. Phys. Lett. 2022, 120, 173104.
Crossref Google Scholar
[28]

Gao, L.; Liao, Q. L.; Zhang, X. K.; Liu, X. Z.; Gu, L.; Liu, B. S.; Du, J. L.; Ou, Y.; Xiao, J. K.; Kang, Z. et al. Defect-engineered atomically thin MoS2 homogeneous electronics for logic inverters. Adv. Mater. 2020, 32, 1906646.
Crossref Google Scholar
[29]

Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150.
Crossref Google Scholar
[30]
Nagel, L. W.; Pederson, D. O. SPICE (simulation program with integrated circuit emphasis). 1973.
[31]

Yakopcic, C.; Taha, T.; Subramanyam, G.; Pino, R. Generalized memristive device SPICE model and its application in circuit design. IEEE Trans. Comput-Aided Des. Integr. Circuits Syst. 2013, 32, 1201–1214.
Crossref Google Scholar
[32]

Li, C.; Wang, Z. R.; Rao, M. Y.; Belkin, D.; Song, W. H.; Jiang, H.; Yan, P.; Li, Y. N.; Lin, P.; Hu, M. et al. Long short-term memory networks in memristor crossbar arrays. Nat. Mach. Intell. 2019, 1, 49–57.
Crossref Google Scholar
[33]

Hu, M.; Li, H.; Chen, Y. R.; Wu, Q.; Rose, G. S.; Linderman, R. W. Memristor crossbar-based neuromorphic computing system: A case study. IEEE Trans. Neural Netw. Learn. Syst. 2014, 25, 1864–1878.
Crossref Google Scholar
[34]

Chen, P. Y.; Yu, S. M. Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design. IEEE Trans. Electron Devices 2015, 62, 4022–4028.
Crossref Google Scholar
[35]

Huang, C. H.; Huang, J. S.; Lin, S. M.; Chang, W. Y.; He, J. H.; Chueh, Y. L. ZnO1−x nanorod arrays/ZnO thin film bilayer structure: From homojunction diode and high-performance memristor to complementary 1D1R application. ACS Nano 2012, 6, 8407–8414.
Crossref Google Scholar
[36]
Yu, S. M.; Li, Z. W.; Chen, P. Y.; Wu, H. Q.; Gao, B.; Wang, D. L.; Wu, W.; Qian, H. , Binary neural network with 16 Mb RRAM macro chip for classification and online training. In 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2016, pp 16.2. 1–16.2. 4.
[37]

Shi, W. S.; Cao, J.; Zhang, Q.; Li, Y. H. Z.; Xu, L. Y. Edge computing: Vision and challenges. IEEE Internet Things J. 2016, 3, 637–646.
Crossref Google Scholar
[38]

Deng, L. The MNIST database of handwritten digit images for machine learning research [best of the web]. IEEE Signal Process. Mag. 2012, 29, 141–142.
Crossref Google Scholar
[39]

Kresse, G.; Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 1996, 6, 15–50.
Crossref Google Scholar
[40]

Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 1996, 77, 3865–3868.
Crossref Google Scholar
[41]

Kerber, T.; Sierka, M.; Sauer, J. Application of semiempirical long-range dispersion corrections to periodic systems in density functional theory. J. Comput. Chem. 2008, 29, 2088–2097.
Crossref Google Scholar
[42]
Atomistix ToolKit version 2018. 06, Synopsys QuantumWise A/S. www. quantumwise. com. (accessed July 10, 2022)
[43]

Brandbyge, M.; Mozos, J. L.; Ordejón, P.; Taylor, J.; Stokbro, K. Density-functional method for nonequilibrium electron transport. Phys. Rev. B 2002, 65, 165401.
Crossref Google Scholar
[44]

Troullier, N.; Martins, J. A straightforward method for generating soft transferable pseudopotentials. Solid State Commun. 1990, 74, 613–616.
Crossref Google Scholar
Nano Research
Volume 16 Issue 1,
January 2023
Pages 1688-1694
DOI: 10.1007/s12274-022-5042-7
Cite this article:
Wang S, Zhou Z, Yang F, et al. All-atomristor logic gates. Nano Research, 2023, 16(1): 1688-1694. https://doi.org/10.1007/s12274-022-5042-7
Topics:
Semiconductor devices

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Received: 22 July 2022
Revised: 07 September 2022
Accepted: 11 September 2022
Published: 21 October 2022
© Tsinghua University Press 2022
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