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Research Article

Heterointerface engineering of perovskite defects and energetics for light-emitting diodes

Xiaomeng Zhang1,§, Lei Shi1,§, Junyang Bai1,§, Feijiu Wang2( ), Maowei Jiang1( )
Key Laboratory of Special Functional Materials of Ministry of Education of China, School of Materials Science, Henan University, Kaifeng 475004, China
Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China

§ Xiaomeng Zhang, Lei Shi, and Junyang Bai contributed equally to this work.

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Graphical Abstract

The defect engineering at perovskite bi-side heterointerfaces is performed by semiconducting P=O passivators featuring well-aligned energy levels regarding to perovskite. The passivators affect the heterointerface energetics, which enhance the electron injection and boost the high performance Perovskite light-emitting diodes (PeLEDs) in this system.

Abstract

Perovskite light-emitting diodes (PeLEDs) rely on optimized device architecture to realize effective electro-optical converting. Especially, the stacks of dissimilar semiconducting materials form heterointerfaces, at which the defects and energetics of perovskite film greatly affect the device performance. Herein, we focus on the heterointerface engineering of perovskite towards high-quality PeLEDs. The defect engineering at both the bottom-surface (namely buried interface) and top-surface of perovskite film is simultaneously performed by semiconducting passivating molecules, which feature aligned energy levels and superior carrier injection ability regarding to perovskite. Moreover, such defect passivation could influence the heterointerface energetics. The perovskite work function is decreased by our suggested passivator treatment because of interface dipole, which results in band bending at the heterojunction and modulates the carrier dynamics. Hence, the electron injection is greatly enhanced, which boosts the up-conversion electroluminescence in current system. Overall, via the heterointerface engineering of defects and energetics synergistically, efficient PeLEDs with 3-fold enhancement of external quantum efficiency and low driving voltages with respect to pristine ones are achieved based on our proposed PeLED architecture.

Keywords

heterointerfacedefect passivationenergeticsperovskite light-emitting diodesup-conversion electroluminescence

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Nano Research
Volume 16 Issue 4,
April 2023
Pages 5525-5532
DOI: 10.1007/s12274-022-5204-7
Cite this article:
Zhang X, Shi L, Bai J, et al. Heterointerface engineering of perovskite defects and energetics for light-emitting diodes. Nano Research, 2023, 16(4): 5525-5532. https://doi.org/10.1007/s12274-022-5204-7
Topics:
Light emitting diodes

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Received: 24 August 2022
Revised: 13 October 2022
Accepted: 15 October 2022
Published: 13 December 2022
© Tsinghua University Press 2022
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