Erratum to: Carrier-driven magnetic and topological phase transitions in twodimensional III-V semiconductors

Yan Li; Xinru Ma; Hongwei Bao; Jian Zhou; Fei Ma; Jingbo Li

doi:10.1007/s12274-022-5216-3

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Erratum

Erratum to: Carrier-driven magnetic and topological phase transitions in twodimensional III-V semiconductors

Yan Li^¹, Xinru Ma^¹, Hongwei Bao^¹, Jian Zhou^{¹^,²}(), Fei Ma^¹

(), Jingbo Li^³()

1State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China

2Center for Alloy Innovation and Design, Xi’an Jiaotong University, Xi’an 710049, China

3Institute of Semiconductors, South China Normal University, Guangzhou 510631, China

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The online version of the original article can be found at:

https://doi.org/10.1007/s12274-022-5011-1

Keywords

III-V semiconductors HSE06 hybrid functional Mexican-hat-shape bands magnetism topological bands

Nano Research

Volume 16 Issue 2,
February 2023

Pages 3604-3604

DOI: 10.1007/s12274-022-5216-3

Cite this article:

Li Y, Ma X, Bao H, et al. Erratum to: Carrier-driven magnetic and topological phase transitions in twodimensional III-V semiconductors. Nano Research, 2023, 16(2): 3604. https://doi.org/10.1007/s12274-022-5216-3