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Research Article

Nanowires mediated growth of β-Ga2O3 nanobelts for high-temperature (> 573 K) solar-blind photodetectors

Xiaobin Zou1, Dongyu Xie2, Yong Sun1( ), Chengxin Wang1( )
State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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Graphical Abstract

Nanowire-mediated high-quality ultralong β-Ga2O3 nanobelts were achieved via a simple catalyst-free chemical vapor deposition route, which exhibited excellent mechanical properties. The photodetectors based on the nanobelts show high sensitivity, high signal-to-noise ratio, high spectral selectivity, and high stability from room temperature to 573 K.

Abstract

β-Ga2O3, with ultra-wide bandgap, high absorption coefficient for high-energy ultraviolet (UV) photons, and high structural stability toward harsh-environment, has been receiving persistent attention for deep ultraviolet photodetectors applications. However, realization of devices with high tolerance toward high temperature faces great challenges due to considerable background signals mainly arising from abundant thermal excited carrier. Herein, nanowire-mediated high-quality β-Ga2O3 nanobelts with ultra-thin thickness and length up to several hundred micrometers were achieved via a simple catalyst-free chemical vapor deposition route. The resulted microdevice output superior optoelectric figure of merits among numerous reports about β-Ga2O3, i.e., ultra-low dark current (below the detection limit of 10−12 A), high responsivity (1,320 A/W), and high spectral selectivity working under low voltage (~ 2 V). More importantly, the performance remains robust at elevated temperature higher than 573 K. These results indicate a large prospect for low-voltage driven deep ultraviolet photodetectors with good sensitivity and stability at harsh environments.

Keywords

β-Ga2O3low-dimensional nanostructureschemical vapor depositionhigh temperature photodetectorssolar-blind photodetectors

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Nano Research
Volume 16 Issue 4,
April 2023
Pages 5548-5554
DOI: 10.1007/s12274-022-5243-0
Cite this article:
Zou X, Xie D, Sun Y, et al. Nanowires mediated growth of β-Ga2O3 nanobelts for high-temperature (> 573 K) solar-blind photodetectors. Nano Research, 2023, 16(4): 5548-5554. https://doi.org/10.1007/s12274-022-5243-0
Topics:
Chemical vapor depositionOptoelectronic devices

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Received: 19 August 2022
Revised: 26 October 2022
Accepted: 26 October 2022
Published: 05 December 2022
© Tsinghua University Press 2022
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