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Research Article

Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe2 on SOI

Yexin Chen1, Qinghai Zhu1, Xiaodong Zhu2, Yijun Sun3, Zhiyuan Cheng1, Jing Xu4( ), Mingsheng Xu1( )
School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Key Laboratory of Ocean Observation-Imaging Testbed of Zhejiang Province, Ocean College, Zhejiang University, Zhoushan 316021, China
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Graphical Abstract

We propose a gate-tunable, high-performance, self-driving, and wide detection range phototransistor based on a two-dimensional (2D) PtSe2 on silicon-on-insulator (SOI). The PtSe2/Si phototransistor exhibits a responsivity of 1.07 A/W and a specific detectivity of 6.60 × 109 Jones under 808 nm illumination at zero gate voltage. And its responsivity and specific detectivity can be further improved to 13.85 A/W and 1.90 × 1010 Jones under a gate voltage regulation. The building block of present PtSe2/Si phototransistor opens a new venue to the design of high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors.

Abstract

Two-dimensional (2D) layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility, tunable bandgap, stability, and other excellent properties. Herein, we propose a gate-tunable, high-performance, self-driving, and wide detection range phototransistor based on a 2D PtSe2 on silicon-on-insulator (SOI). Benefiting from the strong built-in electric field of the PtSe2/Si heterostructure, the phototransistor has a fast response time (rise/fall time) of 36.7/32.6 μs. The PtSe2/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared, including a responsivity of 1.07 A/W and a specific detectivity of 6.60 × 109 Jones under 808 nm illumination at zero gate voltage. The responsivity and specific detectivity of PtSe2/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90 × 1010 Jones under 808 nm illumination. Furthermore, the fabricated PtSe2/Si phototransistor array shows excellent uniformity, reproducibility, and long-term stability in terms of photoresponse performance with negligible variation between pixel cells. The architecture of present PtSe2/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor (CMOS) process.

Keywords

two-dimensional PtSe2silicon-on-insulator (SOI)heterojunctionphototransistorgate voltage modulation

Electronic Supplementary Material

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Nano Research
Volume 16 Issue 5,
May 2023
Pages 7559-7567
DOI: 10.1007/s12274-022-5312-4
Cite this article:
Chen Y, Zhu Q, Zhu X, et al. Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe2 on SOI. Nano Research, 2023, 16(5): 7559-7567. https://doi.org/10.1007/s12274-022-5312-4
Topics:
Optoelectronic devices

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Received: 04 July 2022
Revised: 01 November 2022
Accepted: 09 November 2022
Published: 05 December 2022
© Tsinghua University Press 2022
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