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Research Article

Step-edge controlled fast growth of wafer-scale MoSe2 films by MOCVD

Rui Ji1,§, Jing Liao2,§, Lintao Li2, Rongji Wen2, Mengjie Liu2, Yifeng Ren2, Jianghua Wu2, Yunrui Song3,4, Minru Qi3,4, Zhixing Qiao3,5, Liwei Liu6, Chengbing Qin3,4( ), Yu Deng2( ), Yongtao Tian1( ), Suotang Jia3,4, Yufeng Hao2( )
Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006, China
Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
College of Medical Imaging, Shanxi Medical University, Taiyuan 030001, China
MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China

§ Rui Ji and Jing Liao contributed equally to this work.

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Graphical Abstract

In the metal-organic chemical vapor deposition (MOCVD) growth process of two-dimensional (2D) MoSe2 films, miscutting the sapphire substrates at different angles results in different step edge densities on the substrates. Interestingly, high step edge density can increase more nucleation sites, thus enabling fast growth of large-area 2D MoSe2 films.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs), due to their unique physical properties, have a wide range of applications in the next generation of electronics, optoelectronics, and valleytronics. Large-scale preparation of high-quality TMDCs films is critical to realize these potential applications. Here we report a study on metal-organic chemical vapor deposition (MOCVD) growth of wafer-scale MoSe2 films guided by the crystalline step edges of miscut sapphire wafers. We established that the nucleation density and growth rate of MoSe2 films were positively correlated with the step-edge density and negatively with the growth temperature. At a certain temperature, the MoSe2 domains on the substrate with high step-edge density grow faster than that with low density. As a result, wafer-scale and continuous MoSe2 films can be formed in a short duration (30 min). The MoSe2 films are of high crystalline quality, as confirmed by systematic Raman and photoluminescence (PL) measurements. The results provide an important methodology for the rapid growth of wafer-scale TMDCs, which may promote the application of 2D semiconductors.

Keywords

MoSe2nucleation densitytransition metal dichalcogenidesmetal-organic chemical vapor deposition (MOCVD)wafer-scaletwo-dimensional (2D) semiconductor

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Nano Research
Volume 16 Issue 7,
July 2023
Pages 9577-9583
DOI: 10.1007/s12274-023-5560-y
Cite this article:
Ji R, Liao J, Li L, et al. Step-edge controlled fast growth of wafer-scale MoSe2 films by MOCVD. Nano Research, 2023, 16(7): 9577-9583. https://doi.org/10.1007/s12274-023-5560-y
Topics:
Chemical vapor depositionEpitaxial growthLayered semiconductorsMetallorganic chemical vapor depositionSelf assembled monolayersSemiconducting films

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Received: 02 December 2022
Revised: 30 January 2023
Accepted: 09 February 2023
Published: 10 May 2023
© Tsinghua University Press 2023
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