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Research Article

Magnetoresistance anomaly in Fe5GeTe2 homo-junctions induced by its intrinsic transition

Ruijie Zhao1, Yanfei Wu1( ), Shaohua Yan2, Xinjie Liu1, He Huang1, Yang Gao3, Mengyuan Zhu1, Jianxin Shen1, Shipeng Shen4, Weifeng Xu1, Zeyu Zhang1, Liyuan Zhang1, Jingyan Zhang1, Xinqi Zheng1, Hechang Lei2, Ying Zhang5, Shouguo Wang1,3( )
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
School of Materials Science and Engineering, Anhui University, Hefei 230601, China
Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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Graphical Abstract

A peculiar enhancement of anomalous Hall effect is discovered in Fe5GeTe2 (F5GT) nanoflakes near an intrinsic transition temperature Tp. Negative magnetoresistance (N-MR) and butterfly-shaped magnetoresistance (B-MR) are observed in F5GT homo-junction devices, and noticeably show the maxima near the Tp rather than at the lowest temperatures.

Abstract

Two-dimensional van der Waals (2D vdW) magnets have attracted great attention recently and possess the unprecedented advantages of incorporating high-quality vdW heterostructures and homostructures into spintronic devices, and exploring various physical phenomena or technologies. Among them, Fe5GeTe2 (F5GT) has ferromagnetic order close to room temperature, however the magnetic properties near its intrinsic transitions and F5GT-based 2D devices remain mostly unexplored. Here, we systematically demonstrate the peculiar magnetic properties of Fe5GeTe2 nanoflakes near its intrinsic transition temperature (Tp) which is far lower than its Curie temperature (TC) of ~ 265 K, and firstly discover anomalous magnetoresistance effect in F5GT homo-junctions by magneto-transport measurements. The strongest anomalous Hall effect occurs around Tp which is located in a temperature range from 130 to 160 K for the F5GT nanoflakes with different thicknesses. Furthermore, negative magnetoresistance (N-MR) and butterfly-shaped magnetoresistance (B-MR) are observed in F5GT homo-junction devices, and they appeared only in an intermediate temperature range from 110 to 160 K, noticeably showing the maxima near the Tp rather than the lowest temperature. Our experimental results clearly reveal the significant influence of intrinsic transitions on magnetic properties of F5GT and magnetoresistance effect in F5GT homo-junction devices, which imply a new strategy to achieve high-performance 2D spintronic devices by tuning intrinsic magnetic or structural transitions in 2D vdW magnets.

Keywords

Two-dimensional (2D) van der Waals magnetsFe5GeTe2homo-junctionmagnetoresistance

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Nano Research
Volume 16 Issue 7,
July 2023
Pages 10443-10450
DOI: 10.1007/s12274-023-5609-y
Cite this article:
Zhao R, Wu Y, Yan S, et al. Magnetoresistance anomaly in Fe5GeTe2 homo-junctions induced by its intrinsic transition. Nano Research, 2023, 16(7): 10443-10450. https://doi.org/10.1007/s12274-023-5609-y
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Ferromagnetic materials

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Received: 08 January 2023
Revised: 17 February 2023
Accepted: 22 February 2023
Published: 04 April 2023
© Tsinghua University Press 2023
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