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Research Article

Light trapping enhanced broadband photodetection and imaging based on MoSe2/pyramid Si vdW heterojunction

Shaoqin Pan1, Shuo-En Wu2, Jinjin Hei1, Zhiwen Zhou3, Longhui Zeng2( ), Yakun Xing1, Pei Lin1( ), Zhifeng Shi1, Yongtao Tian1, Xinjian Li1, Di Wu1( )
School of Physics and Microelectronics, Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
Department of Electronic Engineering, Chinese University of Hong Kong, Hong Kong 999077, China
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Graphical Abstract

A MoSe2/pyramid Si mixed-dimensional van der Waals (vdW) heterojunction array with strong light trapping effect was fabricated, which shows broadband self-driven photodetection and imaging performance.

Abstract

Two-dimensional (2D) layered materials have been considered promising candidates for next-generation optoelectronics. However, the performance of 2D photodetectors still has much room for improvement due to weak light absorption of planar 2D materials and lack of high-quality heterojunction preparation technology. Notably, 2D materials integrating with mature bulk semiconductors are a promising pathway to overcome this limitation and promote the practical application on optoelectronics. In this work, we present the patterned assembly of MoSe2/pyramid Si mixed-dimensional van der Waals (vdW) heterojunction arrays for broadband photodetection and imaging. Benefited from the light trapping effect induced enhanced optical absorption and high-quality vdW heterojunction, the photodetector demonstrates a wide spectral response range from 265 to 1550 nm, large responsivity up to 0.67 A·W−1, high specific detectivity of 1.84 × 1013 Jones, and ultrafast response time of 0.34/5.6 μs at 0 V. Moreover, the photodetector array exhibits outstanding broadband image sensing capability. This study offers a novel development route for high-performance and broadband photodetector array by MoSe2/pyramid Si mixed-dimensional heterojunction.

Keywords

two-dimensional (2D) MoSe2 layerslight trappingvan der Waals (vdW) heterojunctionbroadband photodetectorself-powered imaging

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Nano Research
Volume 16 Issue 7,
July 2023
Pages 10552-10558
DOI: 10.1007/s12274-023-5650-x
Cite this article:
Pan S, Wu S-E, Hei J, et al. Light trapping enhanced broadband photodetection and imaging based on MoSe2/pyramid Si vdW heterojunction. Nano Research, 2023, 16(7): 10552-10558. https://doi.org/10.1007/s12274-023-5650-x
Topics:
Layered semiconductorsPhotodetectors

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Received: 17 January 2023
Revised: 25 February 2023
Accepted: 07 March 2023
Published: 28 April 2023
© Tsinghua University Press 2023
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