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Research Article

How to build good inverters from nanomaterial-based transistors

Pengkun Sun, Nan Wei( ), Panpan Zhang, Yingjun Yang, Maguang Zhu, Huiwen Shi, Lian-Mao Peng, Zhiyong Zhang( )
Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
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Graphical Abstract

Focusing on how optimal inverters can be constructed by nanomaterial-based transistors, we analyzed the relationship between the voltage transition characteristic (VTC) of inverters and on-state current, threshold voltage and ambipolar behavior of field-effect transistors (FETs). Specifically, we recommend that the VTC of inverters can maintain a decent shape by adjusting specific parameters of transistors when other parameters are substandard resulting from material or process limitations.

Abstract

As promising components of future integrated circuits (ICs), field-effect transistors (FETs) based on semiconducting nanomaterials are being extensively investigated. As the most essential component of ICs, inverters are favored to be demonstrated at the infant stage of emerging technologies. However, systematic research is absent to reveal how the parameters of transistors affect the performance of inverters, e.g. the voltage transfer characteristics (VTCs). In this work, systematic analysis about the dependency between transistor- and inverter-level metrics have been carried out for both complementary metal-oxide-semiconductor (CMOS) and monotype (p-type-only and n-type-only) technologies, which is further experimentally demonstrated by carbon nanotube FETs and ICs. We also propose guidelines towards the high noise margin and rail-to-rail inverter design based on nanomaterials.

Keywords

field-effect transistorsinvertervoltage transfer characteristicsnoise marginnanomaterial

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Nano Research
Volume 16 Issue 11,
November 2023
Pages 12594-12600
DOI: 10.1007/s12274-023-5678-y
Cite this article:
Sun P, Wei N, Zhang P, et al. How to build good inverters from nanomaterial-based transistors. Nano Research, 2023, 16(11): 12594-12600. https://doi.org/10.1007/s12274-023-5678-y
Topics:
TheoryNano deviceSemiconductorsCarbon

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Received: 01 January 2023
Revised: 27 February 2023
Accepted: 20 March 2023
Published: 11 May 2023
© Tsinghua University Press 2023
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