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Quasi-one-dimensional ZrS3 nanoflakes attract intense interest attributed to their superior electrical and optical anisotropy, stemming from the low symmetry in the crystal structure. However, the conventional chemical vapor transport method for synthesizing bulk ZrS3 is limited by morphology and size controllability. It is highly desirable to propose a facile way to precisely synthesize ZrS3 nanoflakes. In this work, the chemical vapor deposition method is proposed as a feasible way to synthesize ZrS3 nanoflakes. The effects of various substrates and temperatures on ZrS3 synthesis have been investigated. For the as-grown ZrS3, good crystallinity is confirmed with X-ray diffraction and transmission electron microscopy. The structure and interlayer coupling are investigated with Raman scattering spectroscopy. The strong in-plane anisotropy and interlayer coupling of the ZrS3 nanoflakes are illustrated with angle-resolved Raman spectroscopy and temperature-dependent Raman characterization, respectively. This study demonstrates a feasible way for the synthesis of transition metal trisulfides, which may shed new light on the research of other two-dimensional anisotropic transition metal materials.
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