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Research Article

Ultrafast growth of wafer-scale fold-free bilayer graphene

Jilin Tang1,2,3, Yuechen Wang1,2,3, Yuwei Ma4, Xiaoyin Gao1, Xin Gao1,2,3, Ning Li5, Yani Wang1,3, Shishu Zhang1, Liming Zheng1,3, Bing Deng1,3, Rui Yan3, Yisen Cao3, Ronghua Zhang3, Lianming Tong1, Jin Zhang1,2,3, Peng Gao5, Zhongfan Liu1,2,3, Xiaoding Wei4, Hongtao Liu1( ), Hailin Peng1,2,3( )
Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Beijing Graphene Institute, Beijing 100095, China
State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
Electron Microscopy Laboratory, School of Physics, International Center for Quantum Materials, Peking University, Beijing 100871, China
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Graphical Abstract

We present a method for ultrafast growing wafer-scale bilayer graphene with high layer uniformity and fold-free atomic flatness within 30 s, which was achieved through strain regulation of a single-crystal CuNi(111) substrate with well-tuned thickness epitaxially deposited on a sapphire wafer. The bilayer graphene film exhibits high electrical conductivity and enhanced mechanical property comparable to the exfoliated ones.

Abstract

Bilayer graphene provides a versatile platform for exploring a variety of intriguing phenomena and shows much promise for applications in electronics, optoelectronics, etc. Controlled growth of large-area bilayer graphene is therefore highly desired yet still suffers from a slow growth rate and poor layer uniformity. Meanwhile, graphene wrinkles, including folds and ripples, form during cooling due to the thermal contraction mismatch between graphene and the metal substrates, and have been far from suppressed or eliminated, especially in bilayer graphene, which would greatly degrade the extraordinary properties of graphene. Here we report the ultrafast growth of wafer-scale fold-free bilayer graphene by chemical vapor deposition. Through well-tuning the alloy thickness and strain regulation of the single-crystal CuNi(111)/sapphire, the full coverage of a 2-inch fold-free bilayer graphene wafer via mainly isothermal segregation has been achieved as fast as 30 s. The tensile-strained CuNi(111) film reduces the thermal contraction mismatch and suppresses the formation of graphene folds during cooling, which is directly observed through in situ optical microscopy. The ultraflat bilayer graphene exhibits wafer-scale uniformity in electrical performance and enhanced mechanical property comparable to the exfoliated ones. Our results offer a promising route for large-scale production of bilayer graphene and enable its various applications.

Keywords

bilayer graphenegraphene wrinklesultrafast growthin situ optical microscopysingle crystal wafer

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Nano Research
Volume 16 Issue 7,
July 2023
Pages 10684-10689
DOI: 10.1007/s12274-023-5697-8
Cite this article:
Tang J, Wang Y, Ma Y, et al. Ultrafast growth of wafer-scale fold-free bilayer graphene. Nano Research, 2023, 16(7): 10684-10689. https://doi.org/10.1007/s12274-023-5697-8
Topics:
Film growthGrapheneThin films

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Received: 29 December 2022
Revised: 21 March 2023
Accepted: 28 March 2023
Published: 31 May 2023
© Tsinghua University Press 2023
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