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Research Article

Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging

Yupiao Wu1, Shuo-En Wu2, Jinjin Hei1, Longhui Zeng2( ), Pei Lin1, Zhifeng Shi1, Qingming Chen3, Xinjian Li1, Xuechao Yu4( ), Di Wu1( )
School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
School of Microelectronics Science and Technology, Sun Yat-Sen University, Zhuhai 519082, China
Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Graphical Abstract

A large-area two-dimensional (2D) molybdenum diselenide (MoSe2) layers over 3.5-inch are synthesized for fabrication of n-MoSe2/p-Si van der Waals (vdW) heterojunction device array, which shows broadband self-driven photodetection and imaging performance.

Abstract

As one of the most promising materials for two-dimensional transition metal chalcogenides (2D TMDs), molybdenum diselenide (MoSe2) has great potential in photodetectors due to its excellent properties like tunable bandgap, high carrier mobility, and excellent air stability. Although 2D MoSe2-based photodetectors have been reported to exhibit admired performance, the large-area 2D MoSe2 layers are difficult to be achieved via conventional synthesis methods, which severely impedes its future applications. Here, we present the controllable growth of large-area 2D MoSe2 layers over 3.5-inch with excellent homogeneity by a simple post-selenization route. Further, a high-quality n-MoSe2/p-Si van der Waals (vdW) heterojunction device is in-situ fabricated by directly growing 2D n-MoSe2 layers on the patterned p-Si substrate, which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W−1, a high specific detectivity of 1013 Jones, and a fast response time to follow nanosecond pulsed optical signal. In addition, thanks to the inch-level 2D MoSe2 layers, a 4 × 4 integrated heterojunction device array is achieved, which has demonstrated good uniformity and satisfying imaging capability. The large-area 2D MoSe2 layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.

Keywords

molybdenum diselenidelarge-area synthesisbroadband photodetectorintegrated device arrayvan der Waals (vdW) heterojunction

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Nano Research
Volume 16 Issue 8,
August 2023
Pages 11422-11429
DOI: 10.1007/s12274-023-5759-y
Cite this article:
Wu Y, Wu S-E, Hei J, et al. Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging. Nano Research, 2023, 16(8): 11422-11429. https://doi.org/10.1007/s12274-023-5759-y
Topics:
Layered semiconductorsPhotodetectors

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Received: 08 March 2023
Revised: 11 April 2023
Accepted: 19 April 2023
Published: 08 June 2023
© Tsinghua University Press 2023
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