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Research Article

Intrinsic spin Hall resonance in Bi-based Janus monolayers

Lei SunXikui Ma( )Jian LiuYangyang LiMingwen Zhao( )
School of Physics, Shandong University, Jinan 250100, China
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Graphical Abstract

The nonzero in-plane electric potential gradient in two-dimensional (2D) Janus BiXY monolayers leads to intrinsic spin Hall resonance effect with substantial spin Hall conductivity without the need of external magnetic field or light irradiation.

Abstract

The spin Hall resonance effect (SHRE) characterized by a large spin Hall conductivity (SHC) holds immense promise for achieving spin logic and memory devices. However, the identification of a material capable of achieving intrinsic SHRE remains elusive. Herein, we present compelling evidence of intrinsic SHRE within the Bi-based Janus BiXY (X = S, Se and Te; Y = Cl, Br and I) monolayers through first-principles calculations and an effective Hamiltonian model. We attribute the unusual scenario to the warping effect in the Janus monolayers which induces a non-zero out-of-plane spin component, accompanied by additional Rashba degenerate points. Furthermore, we develop a comprehensive effective Rashba Hamiltonian, incorporating high order terms of k to accurately describe the intrinsic SHRE and establish the resilience of this phenomenon in the Janus monolayers. Our study presents a captivating platform for exploring intrinsic SHRE and opens up exciting avenues for the development of novel spintronic devices.

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Nano Research
Pages 12626-12632
Cite this article:
Sun L, Ma X, Liu J, et al. Intrinsic spin Hall resonance in Bi-based Janus monolayers. Nano Research, 2023, 16(11): 12626-12632. https://doi.org/10.1007/s12274-023-5908-3
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Received: 26 February 2023
Revised: 24 May 2023
Accepted: 07 June 2023
Published: 08 August 2023
© Tsinghua University Press 2023
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