AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
Powered by AMiner. Clicking this button will take you away from SciOpen.
Home Nano Research Article
Article Link
Cite
EndNote(RIS) BibTeX
Collect
Submit Manuscript
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article

N:ZnO/MoS2-heterostructured flexible synaptic devices enabling optoelectronic co-modulation for robust artificial visual systems

Lei Xu1,§, Wenxiao Wang1,§, Yang Li1,2( ), Yonghui Lin1, Wenjing Yue1( ), Kai Qian2, Qinglei Guo2, Jeonghyun Kim3, Guozhen Shen4( )
School of Information Science and Engineering, University of Jinan, Jinan 250022, China
School of Microelectronics, Shandong University, Jinan 250101, China
Department of Electronic Convergence Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China

§ Lei Xu and Wenxiao Wang contributed equally to this work.

Show Author Information

Graphical Abstract

Vision is an important function for the brain to perceive and process external information, and its transmission in the brain neural network is affected by the synergistic effect of light and bioelectrical stimuli. In this work, a tailored optoelectronic co-modulation behavior is achieved by designing flexible N:ZnO/MoS2-based heterojunction synaptic devices, and the perception and memory of optoelectronic signals are presented through the device array, which shows great potential for application in bionic visual systems.

Abstract

With the merits of non-contact, highly efficient, and parallel computing, optoelectronic synaptic devices combining sensing and memory in a single unit are promising for constructing neuromorphic computing and artificial visual chip. Based on this, a N:ZnO/ MoS2-heterostructured flexible optoelectronic synaptic device is developed in this work, and its capability in mimicking the synaptic behaviors is systemically investigated under the electrical and light signals. Versatile synaptic functions, including synaptic plasticity, long-term/short-term memory, and learning-forgetting-relearning property, have been achieved in this synaptic device. Further, an artificial visual memory system integrating sense and memory is emulated with the device array, and the visual memory behavior can be regulated by varying the light parameters. Moreover, the optoelectronic co-modulation behavior is verified by applying mixed electric and light signals to the array. In detail, a transient recovery property is discovered when the electric signals are applied in synergy during the decay of the light response, of which property facilitates the development of robust artificial visual systems. Furthermore, by superimposing electrical signals during the light response process, a differentiated response of the array is achieved, which can be used as a proof of concept for the color perception of the artificial visual system.

Keywords

flexible synaptic devicesynaptic plasticityoptoelectronic synapserobust visual memoryoptoelectronic co-modulationartificial visual system

Electronic Supplementary Material

Download File(s)
12274_2023_6004_MOESM1_ESM.pdf (2.1 MB)

References

[1]

Gu, L. L.; Poddar, S.; Lin, Y. J.; Long, Z. H.; Zhang, D. Q.; Zhang, Q. P.; Shu, L.; Qiu, X.; Kam, M.; Javey, A. et al. A biomimetic eye with a hemispherical perovskite nanowire array retina. Nature 2020, 581, 278–282.
Crossref Google Scholar
[2]

Gong, J. D.; Wei, H. H.; Liu, J. Q.; Sun, L.; Xu, Z. P.; Huang, H.; Xu, W. T. An artificial visual nerve for mimicking pupil reflex. Matter 2022, 5, 1578–1589.
Crossref Google Scholar
[3]

Wang, Y.; Gong, Y.; Huang, S. M.; Xing, X. C.; Lv, Z. Y.; Wang, J. J.; Yang, J. Q.; Zhang, G. H.; Zhou, Y.; Han, S. T. Memristor-based biomimetic compound eye for real-time collision detection. Nat. Commun. 2021, 12, 5979.
Crossref Google Scholar
[4]

Meng, J. L.; Wang, T. Y; Zhu, H.; Ji, L.; Bao, W. Z.; Zhou, P.; Chen, L.; Sun, Q. Q.; Zhang, D. W. Integrated in-sensor computing optoelectronic device for environment-adaptable artificial retina perception application. Nano Lett. 2022, 22, 81–89.
Crossref Google Scholar
[5]

Pei, Y. F.; Li, Z. Q.; Li, B.; Zhao, Y.; He, H.; Yan, L.; Li, X. Y.; Wang, J. J.; Zhao, Z.; Sun, Y. et al. A multifunctional and efficient artificial visual perception nervous system with Sb2Se3/CdS-core/shell (SC) nanorod arrays optoelectronic memristor. Adv. Funct. Mater. 2022, 32, 2203454.
Crossref Google Scholar
[6]

Hung, C. C.; Chiang, Y. C.; Lin, Y. C.; Chiu, Y. C.; Chen, W. C. Conception of a smart artificial retina based on a dual-mode organic sensing inverter. Adv. Sci. 2021, 8, 2100742.
Crossref Google Scholar
[7]

Seo, S.; Jo, S. H.; Kim, S.; Shim, J.; Oh, S.; Kim, J. H.; Heo, K.; Choi, J. W.; Choi, C.; Oh, S. et al. Artificial optic-neural synapse for colored and color-mixed pattern recognition. Nat. Commun. 2018, 9, 5106.
Crossref Google Scholar
[8]

Yang, X. Y.; Xiong, Z. Y.; Chen, Y. J.; Ren, Y.; Zhou, L.; Li, H. L.; Zhou, Y.; Pan, F.; Han, S. T. A self-powered artificial retina perception system for image preprocessing based on photovoltaic devices and memristive arrays. Nano Energy. 2020, 78, 105246.
Crossref Google Scholar
[9]

Kwon, S. M.; Cho, S. W.; Kim, M.; Heo, J. S.; Kim, Y.; Park, S. K. Environment-adaptable artificial visual perception behaviors using a light-adjustable optoelectronic neuromorphic device array. Adv. Mater. 2019, 31, 1906433.
Crossref Google Scholar
[10]

Wang, H. L.; Zhao, Q.; Ni, Z. J.; Li, Q. Y.; Liu, H. T.; Yang, Y. C.; Wang, L. F.; Ran, Y.; Guo, Y. L.; Hu, W. P. et al. A ferroelectric/electrochemical modulated organic synapse for ultraflexible, artificial visual-perception system. Adv. Mater. 2018, 30, 1803961.
Crossref Google Scholar
[11]

Lou, Z.; Shen, G. Z. Flexible image sensors with semiconducting nanowires for biomimic visual applications. Small Struct. 2021, 2, 2000152.
Crossref Google Scholar
[12]

Feng, G. D.; Jiang, J.; Li, Y. R.; Xie, D. D.; Tian, B. B.; Wan, Q. Flexible vertical photogating transistor network with an ultrashort channel for in-sensor visual nociceptor. Adv. Funct. Mater. 2021, 31, 2104327.
Crossref Google Scholar
[13]

Chen, S.; Lou, Z.; Chen, D.; Shen, G. Z. An artificial flexible visual memory system based on an UV-motivated memristor. Adv. Mater. 2018, 30, 1705400.
Crossref Google Scholar
[14]

Yan, X. D.; Qian, J. H.; Sangwan, V. K.; Hersam, M. C. Progress and challenges for memtransistors in neuromorphic circuits and systems. Adv. Mater. 2022, 34, 2108025.
Crossref Google Scholar
[15]

Jia, L. N.; Wu, J. Y.; Zhang, Y. N.; Qu, Y.; Jia, B. H.; Chen, Z. G.; Moss, D. J. Fabrication technologies for the on-chip integration of 2D materials. Small Methods 2022, 6, 2101435.
Crossref Google Scholar
[16]

Lian, C. Y.; Vagionas, C.; Alexoudi, T.; Pleros, N.; Youngblood, N.; Ríos, C. Photonic (computational) memories: Tunable nanophotonics for data storage and computing. Nanophotonics 2022, 11, 3823–3854.
Crossref Google Scholar
[17]

Chao, Y. H.; Chen, J. C.; Yang, D. L.; Tseng, Y. J.; Hsu, C. H.; Chen, J. Y. High-performance non-volatile flash photomemory via highly oriented quasi-2D perovskite. Adv. Funct. Mater. 2022, 32, 2112521.
Crossref Google Scholar
[18]

Wang, W. X.; Gao, S.; Li, Y.; Yue, W. J.; Kan, H.; Zhang, C. W.; Lou, Z.; Wang, L. L.; Shen, G. Z. Artificial optoelectronic synapses based on TiNxO2−x/MoS2 heterojunction for neuromorphic computing and visual system. Adv. Funct. Mater. 2021, 31, 2101201.
Crossref Google Scholar
[19]

Shi, J. L.; Jie, J. S.; Deng, W.; Luo, G.; Fang, X. C.; Xiao, Y. L.; Zhang, Y. J.; Zhang, X. J.; Zhang, X. H. A fully solution-printed photosynaptic transistor array with ultralow energy consumption for artificial-vision neural networks. Adv. Mater. 2022, 34, 2200380.
Crossref Google Scholar
[20]

Panca, A.; Panidi, J.; Faber, H.; Stathopoulos, S.; Anthopoulos, T. D.; Prodromakis, T. Flexible oxide thin film transistors, memristors, and their integration. Adv. Funct. Mater. 2023, 33, 2213762.
Crossref Google Scholar
[21]

Wang, X. Y.; Zong, Y. X.; Liu, D. Y.; Yang, J. H.; Wei, Z. M. Advanced optoelectronic devices for neuromorphic analog based on low-dimensional semiconductors. Adv. Funct. Mater. 2023, 33, 2213894.
Crossref Google Scholar
[22]

Yang, C.; Sun, B.; Zhou, G. D.; Guo, T.; Ke, C.; Chen, Y. Z.; Shao, J. Y.; Zhao, Y.; Wang, H. Y. Photoelectric Memristor-based machine vision for artificial intelligence applications. ACS Mater. Lett. 2023, 5, 504–526.
Crossref Google Scholar
[23]

Kuang, J. H.; Liu, K.; Liu, M. H.; Shao, M. C.; Zhu, M. L.; Liu, G. C.; Wen, W.; Chen, J. Y.; Qin, M. C.; Pan, Z. C. et al. Interface defects tuning in polymer-perovskite phototransistors for visual synapse and adaptation functions. Adv. Funct. Mater. 2023, 33, 2209502.
Crossref Google Scholar
[24]

Hu, Y. X.; Dai, M. J.; Feng, W.; Zhang, X.; Gao, F.; Zhang, S. C.; Tan, B. Y.; Zhang, J.; Shuai, Y.; Fu, Y. Q. et al. Ultralow power optical synapses based on MoS2 layers by indium-induced surface charge doping for biomimetic eyes. Adv. Mater. 2021, 33, 2104960.
Crossref Google Scholar
[25]

Liu, Q.; Gao, S.; Xu, L.; Yue, W. J.; Zhang, C. W.; Kan, H.; Li, Y.; Shen, G. Z. Nanostructured perovskites for nonvolatile memory devices. Chem. Soc. Rev. 2022, 51, 3341–3379.
Crossref Google Scholar
[26]

Li, Y.; Wang, J. H.; Yang, Q.; Shen, G. Z. Flexible artificial optoelectronic synapse based on lead-free metal halide nanocrystals for neuromorphic computing and color recognition. Adv. Sci. 2022, 9, 2202123.
Crossref Google Scholar
[27]

Liu, Q. H.; Yin, L.; Zhao, C.; Wu, Z. A.; Wang, J. Y.; Yu, X. R.; Wang, Z. X.; Wei, W. X.; Liu, Y. N.; Mitrovic, I. Z. et al. All-in-one metal-oxide heterojunction artificial synapses for visual sensory and neuromorphic computing systems. Nano Energy 2022, 97, 107171.
Crossref Google Scholar
[28]

Hao, Z. Q.; Wang, H. Y.; Jiang, S.; Qian, J.; Xu, X.; Li, Y. T.; Pei, M. J.; Zhang, B. W.; Guo, J. H.; Zhao, H. J. et al. Retina-inspired self-powered artificial optoelectronic synapses with selective detection in organic asymmetric heterojunctions. Adv. Sci. 2022, 9, 2103494.
Crossref Google Scholar
[29]

Liang, J.; Li, J.; Zhu, H. F.; Han, Y. X.; Wang, Y. R.; Wang, C. X.; Jin, Z.; Zhang, G. M.; Liu, J. One-step fabrication of large-area ultrathin MoS2 nanofilms with high catalytic activity for photovoltaic devices. Nanoscale 2016, 8, 16017–16025.
Crossref Google Scholar
[30]

Lee, H. M.; Jeong, H. J.; Ok, K. C.; Rim, Y. S.; Park, J. S. Near-infrared photoresponsivity of ZnON thin-film transistor with energy band-tunable semiconductor. ACS Appl. Mater. Interfaces 2018, 10, 30541–30547.
Crossref Google Scholar
[31]

Park, H. L.; Kim, H.; Lim, D.; Zhou, H. Y.; Kim, Y. H.; Lee, Y.; Park, S.; Lee, T. W. Retina-inspired carbon nitride-based photonic synapses for selective detection of UV light. Adv. Mater. 2020, 32, 1906899.
Crossref Google Scholar
[32]

Al-Mamun, M.; Zhang, H. M.; Liu, P. R.; Wang, Y.; Cao, J.; Zhao, H. J. Directly hydrothermal growth of ultrathin MoS2 nanostructured films as high performance counter electrodes for dye-sensitised solar cells. RSC Adv. 2014, 4, 21277.
Crossref Google Scholar
[33]

Toth, P. S.; Velický, M.; Bissett, M. A.; Slater, T. J. A.; Savjani, N.; Rabiu, A. K.; Rakowski, A. M.; Brent, J. R.; Haigh, S. J.; O’Brien, P. et al. Asymmetric MoS2/graphene/metal sandwiches: Preparation, characterization, and application. Adv. Mater. 2016, 28, 8256–8264.
Crossref Google Scholar
[34]

Liu, Y. P.; Li, Y. H.; Peng, F.; Lin, Y.; Yang, S. Y.; Zhang, S. S.; Wang, H. J.; Cao, Y. H.; Yu, H. 2H- and 1T- mixed phase few-layer MoS2 as a superior to Pt co-catalyst coated on TiO2 nanorod arrays for photocatalytic hydrogen evolution. Appl. Catal. B: Environ. 2019, 241, 236–245.
Crossref Google Scholar
[35]

Lee, E.; Kim, T.; Benayad, A.; Hur, J.; Park, G. S.; Jeon, S. High mobility and high stability glassy metal-oxynitride materials and devices. Sci. Rep. 2016, 6, 23940.
Crossref Google Scholar
[36]

Wang, Z. D.; Li, Q.; Yuan, Y.; Yang, L. Z.; Zhang, H. B.; Liu, Z. W.; Ouyang, J. T.; Chen, Q. N doped ZnO (N:ZnO) film prepared by reactive HiPIMS deposition technique. AIP Adv. 2020, 10, 035122.
Crossref Google Scholar
[37]

Yang, J. T.; Ge, C.; Du, J. Y.; Huang, H. Y.; He, M.; Wang, C.; Lu, H. B.; Yang, G. Z.; Jin, K. J. Artificial synapses emulated by an electrolyte-gated tungsten-oxide transistor. Adv. Mater. 2018, 30, 1801548.
Crossref Google Scholar
[38]

Gong, J. D.; Wei, H. H.; Ni, Y.; Zhang, S.; Du, Y.; Xu, W. T. Methylammonium halide-doped perovskite artificial synapse for light-assisted environmental perception and learning. Mater. Today Phys. 2021, 21, 100540.
Crossref Google Scholar
[39]

Kim, S. J.; Lee, T. H.; Yang, J. M.; Yang, J. W.; Lee, Y. J.; Choi, M. J.; Lee, S. A.; Suh, J. M.; Kwak, K. J.; Baek, J. H. et al. Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses. Mater. Today 2022, 52, 19–30.
Crossref Google Scholar
[40]

Tang, B. S.; Veluri, H.; Li, Y. D.; Yu, Z. G.; Waqar, M.; Leong, J. F.; Sivan, M.; Zamburg, E.; Zhang, Y. W.; Wang, J. et al. Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing. Nat. Commun. 2022, 13, 3037.
Crossref Google Scholar
[41]

Luo, F. F.; Wu, Y. Z.; Tong, J. W.; Tian, F. B.; Zhang, X. M. Resistive switching and artificial synaptic performances of memristor based on low-dimensional bismuth halide perovskites. Nano Res. 2023, 16, 10108–10119.
Crossref Google Scholar
[42]

Huang, F.; Fang, F. F.; Zheng, Y.; You, Q.; Li, H. N.; Fang, S. F.; Cong, X. N.; Jiang, K.; Wang, Y.; Han, C. et al. Visible-light stimulated synaptic plasticity in amorphous indium-gallium-zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications. Nano Res. 2023, 16, 1304–1312.
Crossref Google Scholar
[43]

Xi, F. B.; Han, Y.; Liu, M. S.; Bae, J. H.; Tiedemann, A.; Grützmacher, D.; Zhao, Q. T. Artificial synapses based on ferroelectric schottky barrier field-effect transistors for neuromorphic applications. ACS Appl. Mater. Interfaces 2021, 13, 32005–32012.
Crossref Google Scholar
[44]

Wang, X.; Zhou, X.; Cui, A. Y.; Deng, M. H.; Xu, X. H.; Xu, L. P.; Ye, Y.; Jiang, K.; Shang, L. Y.; Zhu, L. Q. et al. Flexo-photoelectronic effect in n-type/p-type two-dimensional semiconductors and a deriving light-stimulated artificial synapse. Mater. Horiz. 2021, 8, 1985–1997.
Crossref Google Scholar
[45]

Zhong, Y. N.; Wang, T.; Gao, X.; Xu, J. L.; Wang, S. D. Synapse-like organic thin film memristors. Adv. Funct. Mater. 2018, 28, 1800854.
Crossref Google Scholar
[46]

Ji, X. D.; Paulsen, B. D.; Chik, G. K. K.; Wu, R. H.; Yin, Y. Y.; Chan, P. K. L.; Rivnay, J. Mimicking associative learning using an ion-trapping non-volatile synaptic organic electrochemical transistor. Nat. Commun. 2021, 12, 2480.
Crossref Google Scholar
[47]

Han, C.; Han, X. W.; Han, J. Y.; He, M. Y.; Peng, S. L.; Zhang, C. Y.; Liu, X. C.; Gou, J.; Wang, J. Light-stimulated synaptic transistor with high PPF feature for artificial visual perception system application. Adv. Funct. Mater. 2022, 32, 2113053.
Crossref Google Scholar
[48]

Zucker, R. S.; Regehr, W. G. Short-term synaptic plasticity. Annu. Rev. Physiol. 2002, 64, 355–405.
Crossref Google Scholar
[49]

Wang, Z. Q.; Xu, H. Y.; Li, X. H.; Yu, H.; Liu, Y. C.; Zhu, X. J. Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv. Funct. Mater. 2012, 22, 2759–2765.
Crossref Google Scholar
[50]

Kim, S. K.; Kim, J. Y.; Choi, S. Y.; Lee, J. Y.; Jeong, H. Y. Direct observation of conducting nanofilaments in graphene-oxide-resistive switching memory. Adv. Funct. Mater. 2015, 25, 6710–6715.
Crossref Google Scholar
[51]

Harikesh, P. C.; Yang, C. Y.; Tu, D. Y.; Gerasimov, J. Y.; Dar, A. M.; Armada-Moreira, A.; Massetti, M.; Kroon, R.; Bliman, D.; Olsson, R. et al. Organic electrochemical neurons and synapses with ion mediated spiking. Nat. Commun. 2022, 13, 901.
Crossref Google Scholar
[52]

Dulcis, D.; Spitzer, N. C. Illumination controls differentiation of dopamine neurons regulating behaviour. Nature 2008, 456, 195–201.
Crossref Google Scholar
[53]

Martin, S. J.; Grimwood, P. D.; Morris, R. G. M. Synaptic plasticity and memory: An evaluation of the hypothesis. Annu. Rev. Neurosci. 2000, 23, 649–711.
Crossref Google Scholar
[54]

Kim, D.; Min, W. K.; Kim, H. T.; Chung, J.; Kim, M. S.; Kim, H. J. Realization of enhanced long-term visual memory for indium-gallium-zinc oxide-based optical synaptic transistor. Adv. Opt. Mater. 2022, 10, 2200558.
Crossref Google Scholar
[55]

Atkinson, R. C.; Shiffrin, R. M. Human memory: A proposed system and its control processes. Psychol. Learn. Motiv. 1968, 2, 89–195.
Crossref Google Scholar
Nano Research
Volume 17 Issue 3,
March 2024
Pages 1902-1912
DOI: 10.1007/s12274-023-6004-4
Cite this article:
Xu L, Wang W, Li Y, et al. N:ZnO/MoS2-heterostructured flexible synaptic devices enabling optoelectronic co-modulation for robust artificial visual systems. Nano Research, 2024, 17(3): 1902-1912. https://doi.org/10.1007/s12274-023-6004-4
Topics:
Optoelectronic devices

1025

Views

7

Crossref

8

Web of Science

7

Scopus

0

CSCD

Altmetrics
Received: 10 May 2023
Revised: 28 June 2023
Accepted: 13 July 2023
Published: 12 September 2023
© Tsinghua University Press 2023
Return