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Research Article

Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation

Yue Zheng1, Qi You1, Zhentian Yin1, Jian Tang1, Ke Jiang1, Zihao Xie1, Henan Li2, Cheng Han1( ), Yumeng Shi2
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
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Graphical Abstract

The presence of native oxide on two-dimensional (2D)-layered SnSe induces a sizable tunneling barrier that limits the carrier transport between metal and SnSe. Through the modulation of native oxide using different metals, we have successfully achieved high-performance SnSe field-effect-transistors (FETs) with the optimized contact of chromium.

Abstract

The discovery of two-dimensional (2D) semiconductor has opened up new avenues for the development of short-channel field-effect transistors (FETs) with desired electrical performance. Among them, orthorhombic tin-selenide (SnSe) has garnered increasing attention due to its potential applications in a variety of electronic, optoelectronic, and thermoelectric devices. However, the realization of high-performance SnSe FETs with low contact resistance (Rc) remains a challenge. Herein, we systematically investigate the contact of few-layer SnSe FETs through the modulation of native oxide on SnSe by using different metals. It is found that chromium (Cr)-contacted devices possess the best FET performance, such as electron mobility up to 606 cm2/(V·s) at 78 K, current on/off ratio exceeding 1010, and saturation current of ~ 550 μA/μm, where a negligible Schottky barrier (SB) of ~ 30 meV and a low contact resistance of ~ 425 Ω μm are achieved. X-ray photoelectron spectroscopy (XPS) and cross-sectional electron dispersive X-ray spectroscopy (EDX) results further reveal that the improved contact arises from the Cr-induced reduction of native oxide (SnOx) to Sn, which thins the tunneling barrier for efficient electron injection. Our findings provide a deep insight into the 2D-metal contact of SnSe and pave the way for its applications in future nanoelectronics.

Keywords

few-layer SnSe field-effect transistors (FETs)Cr contactnative oxidecontact resistance (Rc)Schottky barrier (SB)

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Nano Research
Volume 17 Issue 4,
April 2024
Pages 3014-3020
DOI: 10.1007/s12274-023-6047-6
Cite this article:
Zheng Y, You Q, Yin Z, et al. Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation. Nano Research, 2024, 17(4): 3014-3020. https://doi.org/10.1007/s12274-023-6047-6
Topics:
Field effect transistors

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Received: 25 May 2023
Revised: 16 July 2023
Accepted: 27 July 2023
Published: 29 August 2023
© Tsinghua University Press 2023
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