Erratum to: On the voltage behavior of quantum dot light-emitting diode

Xiangwei Qu; Jingrui Ma; Pai Liu; Kai Wang; Xiao Wei Sun

doi:10.1007/s12274-023-6053-8

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Erratum

Erratum to: On the voltage behavior of quantum dot light-emitting diode

Xiangwei Qu^{¹^,²^,^§}, Jingrui Ma^{¹^,²^,^§}, Pai Liu^{¹^,²}, Kai Wang^{¹^,²}, Xiao Wei Sun^{¹^,²}()

1Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China

2Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

^§ Xiangwei Qu and Jingrui Ma contributed equally to this work.

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The online version of the original article can be found at:

https://doi.org/10.1007/s12274-022-5106-8

Keywords

quantum dot light-emitting diode voltage sweep behavior efficiency drop hole leakage current

Nano Research

Volume 17 Issue 4,
April 2024

Pages 3424-3424

DOI: 10.1007/s12274-023-6053-8

Cite this article:

Qu X, Ma J, Liu P, et al. Erratum to: On the voltage behavior of quantum dot light-emitting diode. Nano Research, 2024, 17(4): 3424. https://doi.org/10.1007/s12274-023-6053-8