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Erratum

Erratum to: On the voltage behavior of quantum dot light-emitting diode

Xiangwei Qu1,2,§, Jingrui Ma1,2,§, Pai Liu1,2, Kai Wang1,2, Xiao Wei Sun1,2( )
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

§ Xiangwei Qu and Jingrui Ma contributed equally to this work.

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The online version of the original article can be found at:
https://doi.org/10.1007/s12274-022-5106-8

Keywords

quantum dot light-emitting diodevoltage sweep behaviorefficiency drophole leakage current
Nano Research
Volume 17 Issue 4,
April 2024
Pages 3424-3424
DOI: 10.1007/s12274-023-6053-8
Cite this article:
Qu X, Ma J, Liu P, et al. Erratum to: On the voltage behavior of quantum dot light-emitting diode. Nano Research, 2024, 17(4): 3424. https://doi.org/10.1007/s12274-023-6053-8

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Published: 28 September 2023
© Tsinghua University Press 2023
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