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Research Article

A self-powered solar-blind UV-enhanced Bi2Se3/a-Ga2O3/p-Si heterojunction photodetector for full spectral photoresponse and imaging

Yajie Han, Shujie Jiao( ), Jiangcheng Jing, Lei Chen, Ping Rong, Shuai Ren, Dongbo Wang, Shiyong Gao, Jinzhong Wang( )
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
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Graphical Abstract

The paper presents a simple and low-cost two-step synthesis method for the preparation of a self-powered full-spectrum photodetector with enhanced sensitivity to solar-blind ultraviolet, which exhibits a response range from 200 to 850 nm with a responsivity of 1.38 mA/W and a detectivity of 3.22 × 1010 Jones under 254 nm light at 0 V, and displays exceptional stability and imaging capabilities, representing a significant contribution to the self-powered full-spectrum photodetector field.

Abstract

Self-powered full-spectrum photodetectors (PDs) offer numerous advantages, such as broad application fields, high precision, efficiency, and multi-functionality, which represent a highly promising and potentially valuable class of detectors for future development. However, insensitive response to solar-blind ultraviolet (UV) and complex and expensive preparation processes greatly limit their performance and practical application. In this study, a self-powered full-spectrum Bi2Se3/a-Ga2O3/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented. Experiments results reveal that the developed PD has an excellent performance, such as high sensitivity from 200 to 850 nm, and a responsivity of 1.38 mA/W as well as a detectivity of 3.22 × 1010 Jones under 254 nm light at zero bias. Additionally, the unencapsulated device displays exceptional stability and imaging capabilities. It is expected that Bi2Se3/a-Ga2O3/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.

Keywords

imagingself-powered photodetectorBi2Se3/a-Ga2O3/p-Sifull spectral photoresponse

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Nano Research
Volume 17 Issue 4,
April 2024
Pages 2960-2970
DOI: 10.1007/s12274-023-6082-3
Cite this article:
Han Y, Jiao S, Jing J, et al. A self-powered solar-blind UV-enhanced Bi2Se3/a-Ga2O3/p-Si heterojunction photodetector for full spectral photoresponse and imaging. Nano Research, 2024, 17(4): 2960-2970. https://doi.org/10.1007/s12274-023-6082-3
Topics:
Nano detectionSemiconductors

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Received: 15 June 2023
Revised: 08 August 2023
Accepted: 10 August 2023
Published: 18 September 2023
© Tsinghua University Press 2023
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