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Research Article

Enhanced carrier mobility in MoSe2 by pressure modulation

Zhiying Bai1, He Zhang2,3, Jiaqi He4, Dawei He1, Jiarong Wang1, Guili Li1, Jinxuan Bai1, Kun Zhao1, Xiaohui Yu2,3,5( ), Yongsheng Wang1( ), Xiaoxian Zhang1( )
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
Songshan Lake Materials Laboratory, Dongguan 523808, China
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Graphical Abstract

Using a spatiotemporal resolved pump-probe setup, the carrier transport performance and relaxation process of MoSe2 under pressure were investigated nondestructively and simultaneously.

Abstract

Two-dimensional (2D) materials hold great potential for the development of next-generation integrated circuits (ICs) at the atomic limit. However, it is still very challenging to build high performance devices. One of the main factors that limit the incorporation of 2D materials into IC technology is their relatively low carrier mobility. Thus, the engineering strategies that focus on optimizing performance continue to emerge. Herein, using a spatiotemporal resolved pump-probe setup, the carrier transport performance and relaxation process of few-layer and bulk MoSe2 under pressure were investigated nondestructively and simultaneously. Our results show that pressure can tune the transport performance effectively. In particular, under pressure regulation, the carrier mobility of the bulk MoSe2 increases by ~ 4 times; meanwhile, the carrier lifetimes of the samples become shorter. Although the processes almost return to their initial state after the pressure release, it is still surprising to see that the carrier mobilities of few-layer and bulk MoSe2 are still ~ 1.5 and 2 times enhanced, and carrier lifetimes are still shorter than the initial state. Combined with the Raman spectra under pressure, we consider that it is caused by the enhanced layer coupling and lattice compression. The combination of enhanced mobility and shortened lifetime in MoSe2 under pressure holds great potential for optoelectronic applications under the deep ocean and deep earth.

Keywords

pressuretransition metal dichalcogenides (TMDs)carrier relaxationtransport performancespatiotemporally resolved pump-probe spectroscopy

Electronic Supplementary Material

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Nano Research
Volume 16 Issue 11,
November 2023
Pages 12738-12744
DOI: 10.1007/s12274-023-6143-7
Cite this article:
Bai Z, Zhang H, He J, et al. Enhanced carrier mobility in MoSe2 by pressure modulation. Nano Research, 2023, 16(11): 12738-12744. https://doi.org/10.1007/s12274-023-6143-7
Topics:
Semiconductors

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Received: 30 June 2023
Revised: 16 August 2023
Accepted: 30 August 2023
Published: 12 October 2023
© Tsinghua University Press 2023
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