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Research Article

Enhanced carrier mobility in MoSe2 by pressure modulation

Zhiying Bai1, He Zhang2,3, Jiaqi He4, Dawei He1, Jiarong Wang1, Guili Li1, Jinxuan Bai1, Kun Zhao1, Xiaohui Yu2,3,5( ), Yongsheng Wang1( ), Xiaoxian Zhang1( )
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
Songshan Lake Materials Laboratory, Dongguan 523808, China
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Graphical Abstract

Using a spatiotemporal resolved pump-probe setup, the carrier transport performance and relaxation process of MoSe2 under pressure were investigated nondestructively and simultaneously.

Abstract

Two-dimensional (2D) materials hold great potential for the development of next-generation integrated circuits (ICs) at the atomic limit. However, it is still very challenging to build high performance devices. One of the main factors that limit the incorporation of 2D materials into IC technology is their relatively low carrier mobility. Thus, the engineering strategies that focus on optimizing performance continue to emerge. Herein, using a spatiotemporal resolved pump-probe setup, the carrier transport performance and relaxation process of few-layer and bulk MoSe2 under pressure were investigated nondestructively and simultaneously. Our results show that pressure can tune the transport performance effectively. In particular, under pressure regulation, the carrier mobility of the bulk MoSe2 increases by ~ 4 times; meanwhile, the carrier lifetimes of the samples become shorter. Although the processes almost return to their initial state after the pressure release, it is still surprising to see that the carrier mobilities of few-layer and bulk MoSe2 are still ~ 1.5 and 2 times enhanced, and carrier lifetimes are still shorter than the initial state. Combined with the Raman spectra under pressure, we consider that it is caused by the enhanced layer coupling and lattice compression. The combination of enhanced mobility and shortened lifetime in MoSe2 under pressure holds great potential for optoelectronic applications under the deep ocean and deep earth.

Keywords

transition metal dichalcogenides (TMDs)pressurecarrier relaxationtransport performancespatiotemporally resolved pump-probe spectroscopy

Electronic Supplementary Material

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References

[1]

Butler, S. Z.; Hollen, S. M.; Cao, L. Y.; Cui, Y.; Gupta, J. A.; Gutiérrez, H. R.; Heinz, T. F.; Hong, S. S.; Huang, J. X.; Ismach, A. F. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 2013, 7, 2898–2926.
Crossref Google Scholar
[2]

Bhimanapati, G. R.; Lin, Z.; Meunier, V.; Jung, Y.; Cha, J.; Das, S.; Xiao, D.; Son, Y.; Strano, M. S.; Cooper, V. R. et al. Recent advances in two-dimensional materials beyond graphene. ACS Nano 2015, 9, 11509–11539.
Crossref Google Scholar
[3]

Chen, J. Y.; Tang, W.; Tian, B. B.; Liu, B.; Zhao, X. X.; Liu, Y. P.; Ren, T. H.; Liu, W.; Geng, D. C.; Jeong, H. Y. et al. Chemical vapor deposition of high-quality large-sized MoS2 crystals on silicon dioxide substrates. Adv. Sci. 2016, 3, 1500033.
Crossref Google Scholar
[4]

Zhu, C.; Zhao, X. X.; Wang, X. W.; Chen, J. Q.; Yu, P.; Liu, S.; Zhou, J. D.; Fu, Q. D.; Zeng, Q. S.; He, Y. M. et al. Direct laser patterning of a 2D WSe2 logic circuit. Adv. Funct. Mater. 2021, 31, 2009549.
Crossref Google Scholar
[5]

Qiao, J.; Wang, S. P.; Wang, Z. M.; He, C.; Zhao, S. Q.; Xiong, X. X.; Wang, S. L.; Zhang, X. X.; Tao, X. T. Ultrasensitive and broadband all-optically controlled THz modulator based on MoTe2/Si van der Waals heterostructure. Adv. Opt. Mater. 2020, 8, 2000160.
Crossref Google Scholar
[6]

Zheng, W.; Lin, R. C.; Zhang, Z. J.; Huang, F. Vacuum-ultraviolet photodetection in few-layered h-BN. ACS Appl. Mater. Interfaces 2018, 10, 27116–27123.
Crossref Google Scholar
[7]

Qu, Y.; Wu, J. Y.; Yang, Y. Y.; Zhang, Y. N.; Liang, Y.; El Dirani, H.; Crochemore, R.; Demongodin, P.; Sciancalepore, C.; Grillet, C. et al. Enhanced four-wave mixing in silicon nitride waveguides integrated with 2D layered graphene oxide films. Adv. Opt. Mater. 2020, 8, 2001048.
Crossref Google Scholar
[8]

Wagner, S.; Yim, C.; McEvoy, N.; Kataria, S.; Yokaribas, V.; Kuc, A.; Pindl, S.; Fritzen, C. P.; Heine, T.; Duesberg, G. S. et al. Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe2 films. Nano Lett. 2018, 18, 3738–3745.
Crossref Google Scholar
[9]

Li, S. L.; Tsukagoshi, K.; Orgiu, E.; Samorì, P. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors. Chem. Soc. Rev. 2016, 45, 118–151.
Crossref Google Scholar
[10]

Kaasbjerg, K.; Thygesen, K. S.; Jacobsen, K. W. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys. Rev. B 2012, 85, 115317.
Crossref Google Scholar
[11]

Das, S.; Chen, H. Y.; Penumatcha, A. V.; Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 2013, 13, 100–105.
Crossref Google Scholar
[12]

Wang, F.; Yin, L.; Wang, Z. X.; Xu, K.; Wang, F. M.; Shifa, T. A.; Huang, Y.; Wen, Y.; Jiang, C.; He, J. Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices. Appl. Phys. Lett. 2016, 109, 193111.
Crossref Google Scholar
[13]

Cho, S.; Kim, S.; Kim, J. H.; Zhao, J.; Seok, J.; Keum, D. H.; Baik, J.; Choe, D. H.; Chang, K. J.; Suenaga, K. et al. Phase patterning for ohmic homojunction contact in MoTe2. Science 2015, 349, 625–628.
Crossref Google Scholar
[14]

Jena, D.; Konar, A. Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. Phys. Rev. Lett. 2007, 98, 136805.
Crossref Google Scholar
[15]

Zhou, C. J.; Wang, X. S.; Raju, S.; Lin, Z. Y.; Villaroman, D.; Huang, B. L.; Chan, H. L. W.; Chan, M. S.; Chai, Y. Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT. Nanoscale 2015, 7, 8695–8700.
Crossref Google Scholar
[16]

Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150.
Crossref Google Scholar
[17]

Retamal, J. R. D.; Periyanagounder, D.; Ke, J. J.; Tsai, M. L.; He, J. H. Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides. Chem. Sci. 2018, 9, 7727–7745.
Crossref Google Scholar
[18]

Jia, L. N.; Wu, J. Y.; Zhang, Y. N.; Qu, Y.; Jia, B. H.; Chen, Z. G.; Moss, D. J. Fabrication technologies for the on-chip integration of 2D materials. Small Methods 2022, 6, 2101435.
Crossref Google Scholar
[19]

Chi, Z. H.; Zhao, X. M.; Zhang, H. D.; Goncharov, A. F.; Lobanov, S. S.; Kagayama, T.; Sakata, M.; Chen, X. J. Pressure-induced metallization of molybdenum disulfide. Phys. Rev. Lett. 2014, 113, 036802.
Crossref Google Scholar
[20]

Chi, Z. H.; Chen, X. L.; Yen, F.; Peng, F.; Zhou, Y. H.; Zhu, J. L.; Zhang, Y. J.; Liu, X. D.; Lin, C. L.; Chu, S. Q. et al. Superconductivity in pristine 2Ha-MoS2 at ultrahigh pressure. Phys. Rev. Lett. 2018, 120, 037002.
Crossref Google Scholar
[21]

Liu, B.; Lin, L.; Gao, Y.; Ma, Y. Z.; Zhou, P. Y.; Han, D. D.; Gao, C. X. Metallization of molybdenum diselenide under nonhydrostatic compression. J. Phys. Chem. C 2021, 125, 5412–5416.
Crossref Google Scholar
[22]

Fu, X. P.; Li, F. F.; Lin, J. F.; Gong, Y. B.; Huang, X. L.; Huang, Y. P.; Han, B.; Zhou, Q.; Cui, T. Pressure-dependent light emission of charged and neutral excitons in monolayer MoSe2. J. Phys. Chem. Lett. 2017, 8, 3556–3563.
Crossref Google Scholar
[23]

Nayak, A. P.; Pandey, T.; Voiry, D.; Liu, J.; Moran, S. T.; Sharma, A.; Tan, C.; Chen, C. H.; Li, L. J.; Chhowalla, M. et al. Pressure-dependent optical and vibrational properties of monolayer molybdenum disulfide. Nano Lett. 2015, 15, 346–353.
Crossref Google Scholar
[24]

Ma, X. L.; Fu, S. H.; Ding, J. W.; Liu, M.; Bian, A.; Hong, F.; Sun, J. T.; Zhang, X. X.; Yu, X. H.; He, D. W. Robust interlayer exciton in WS2/MoSe2 van der Waals heterostructure under high pressure. Nano Lett. 2021, 21, 8035–8042.
Crossref Google Scholar
[25]

Li, C. K.; Cheng, W. J.; Zhang, X. Y.; Zhang, P. J.; Zheng, Q. F.; Yan, Z. P.; Han, j.; Dai, G. Y.; Wang, S. M.; Quan, Z. W. et al. Tuning of interlayer interaction in MoS2−WS2 van der Waals heterostructures using hydrostatic pressure. J. Phys. Chem. C. 2023, 127, 7784–7791.
Crossref Google Scholar
[26]

Zhu, M. Q.; Zhang, Z. N.; Zhang, T.; Liu, D. D.; Zhang, H.; Zhang, Z. X.; Li, Z. L.; Cheng, Y. C.; Huang, W. Exchange between interlayer and intralayer exciton in WSe2/WS2 heterostructure by interlayer coupling engineering. Nano Lett. 2022, 22, 4528–4534.
Crossref Google Scholar
[27]

Pandey, T.; Nayak, A. P.; Liu, J.; Moran, S. T.; Kim, J. S.; Li, L. J.; Lin, J. F.; Akinwande, D.; Singh, A. K. Pressure-induced charge transfer doping of monolayer graphene/MoS2 heterostructure. Small 2016, 12, 4063–4069.
Crossref Google Scholar
[28]

Mao, H. K.; Xu, J.; Bell, P. M. Calibration of the ruby pressure gauge to 800-kbar under quasi-hydrostatic conditions. J. Geophys. Res. 1986, 91, 4673–4676.
Crossref Google Scholar
[29]

Ceballos, F.; Zhao, H. Ultrafast laser spectroscopy of two-dimensional materials beyond graphene. Adv. Funct. Mater. 2017, 27, 1604509.
Crossref Google Scholar
[30]

Tonndorf, P.; Schmidt, R.; Böttger, P.; Zhang, X.; Böerner, J.; Liebig, A.; Albrecht, M.; Kloc, C.; Gordan, O.; Zahn, D. R. T. et al. Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Opt. Express 2013, 21, 4908–4916.
Crossref Google Scholar
[31]

Zhang, X.; Qiao, X. F.; Shi, W.; Wu, J. B.; Jiang, D. S.; Tan, P. H. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. Chem. Soc. Rev. 2015, 44, 2757–2785.
Crossref Google Scholar
[32]

Nam, D.; Lee, J. U.; Cheong, H. Excitation energy dependent Raman spectrum of MoSe2. Sci. Rep. 2015, 5, 17113.
Crossref Google Scholar
[33]

Kim, K.; Lee, J. U.; Nam, D.; Cheong, H. Davydov splitting and excitonic resonance effects in Raman spectra of few-layer MoSe2. ACS Nano 2016, 10, 8113–8120.
Crossref Google Scholar
[34]

Nayak, A. P.; Bhattacharyya, S.; Zhu, J.; Liu, J.; Wu, X.; Pandey, T.; Jin, C. Q.; Singh, A. K.; Akinwande, D.; Lin, J. F. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide. Nat. Commun. 2014, 5, 3731.
Crossref Google Scholar
[35]

Sousa, J. H. A.; Araújo, B. S.; Ferreira, R. S.; San-Miguel, A.; Alencar, R. S.; Souza Filho, A. G. Pressure tuning resonance raman scattering in monolayer, trilayer, and many-layer molybdenum disulfide. ACS Appl. Nano Mater. 2022, 5, 14464–14469.
Crossref Google Scholar
[36]

Cheng, X. R.; Li, Y. Y.; Shang, J. M.; Hu, C. S.; Ren, Y. F.; Liu, M.; Qi, Z. M. Thickness-dependent phase transition and optical behavior of MoS2 films under high pressure. Nano Res. 2018, 11, 855–863.
Crossref Google Scholar
[37]

Cui, Q. N.; Ceballos, F.; Kumar, N.; Zhao, H. Transient absorption microscopy of monolayer and bulk WSe2. ACS Nano 2014, 8, 2970–2976.
Crossref Google Scholar
[38]

Shi, H. Y.; Yan, R. S.; Bertolazzi, S.; Brivio, J.; Gao, B.; Kis, A.; Jena, D.; Xing, H. G.; Huang, L. B. Exciton dynamics in suspended mono layer and few-layer MoS2 2D crystals. ACS Nano 2013, 7, 1072–1080.
Crossref Google Scholar
[39]

Hong, X. P.; Kim, J.; Shi, S. F.; Zhang, Y.; Jin, C. H.; Sun, Y. H.; Tongay, S.; Wu, J. Q.; Zhang, Y. F.; Wang, F. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 2014, 9, 682–686.
Crossref Google Scholar
[40]

Yu, Y. L.; Yu, Y. F.; Xu, C.; Barrette, A.; Gundogdu, K.; Cao, L. Y. Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers. Phys. Rev. B 2016, 93, 201111.
Crossref Google Scholar
[41]

Schmitt-Rink, S.; Chemla, D. S.; Miller, D. A. B. Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structures. Phys. Rev. B 1985, 32, 6601–6609.
Crossref Google Scholar
[42]

Liu, S. Y.; Tan, C. W.; He, D. W.; Wang, Y. S.; Peng, H. L.; Zhao, H. Optical properties and photocarrier dynamics of Bi2O2Se monolayer and nanoplates. Adv. Opt. Mater 2020, 8, 1901567.
Crossref Google Scholar
[43]

Nie, Z. G.; Long, R.; Sun, L. F.; Huang, C. C.; Zhang, J.; Xiong, Q. H.; Hewak, D. W.; Shen, Z. X.; Prezhdo, O. V.; Loh, Z. H. Ultrafast carrier thermalization and cooling dynamics in few-layer MoS2. ACS Nano 2014, 8, 10931–10940.
Crossref Google Scholar
[44]

Horng, J.; Stroucken, T.; Zhang, L.; Paik, E. Y.; Deng, H.; Koch, S. W. Observation of interlayer excitons in MoSe2 single crystals. Phys. Rev. B 2018, 97, 241404.
Crossref Google Scholar
[45]

Ceballos, F.; Cui, Q. N.; Bellus, M. Z.; Zhao, H. Exciton formation in monolayer transition metal dichalcogenides. Nanoscale 2016, 8, 11681–11688.
Crossref Google Scholar
[46]

Steinleitner, P.; Merkl, P.; Nagler, P.; Mornhinweg, J.; Schüller, C.; Korn, T.; Chernikov, A.; Huber, R. Direct observation of ultrafast exciton formation in a monolayer of WSe2. Nano Lett. 2017, 17, 1455–1460.
Crossref Google Scholar
[47]

Wang, H. N.; Zhang, C. J.; Rana, F. Surface recombination limited lifetimes of photoexcited carriers in few-layer transition metal dichalcogenide MoS2. Nano Lett. 2015, 15, 8204–8210.
Crossref Google Scholar
[48]

Li, Q. Y.; Sui, L.; Niu, G. M.; Jiang, J. T.; Zhang, Y. T.; Wu, G. R.; Jin, M. X.; Yuan, K. J. Pressure manipulation of interlayer interactions and ultrafast carrier dynamics in few-layer MoS2. J. Phys. Chem. C 2020, 124, 11183–11192.
Crossref Google Scholar
[49]

Ci, P.; Chen, Y. B.; Kang, J.; Suzuki, R.; Choe, H. S.; Suh, J.; Ko, C.; Park, T.; Shen, K.; Iwasa, Y. et al. Quantifying van der Waals interactions in layered transition metal dichalcogenides from pressure-enhanced valence band splitting. Nano Lett. 2017, 17, 4982–4988.
Crossref Google Scholar
[50]

Dou, X. M.; Ding, K.; Jiang, D. S.; Fan, X. F.; Sun, B. Q. Probing spin-orbit coupling and interlayer coupling in atomically thin molybdenum disulfide using hydrostatic pressure. ACS Nano 2016, 10, 1619–1624.
Crossref Google Scholar
[51]

Wang, H. N.; Zhang, C. J.; Rana, F. Ultrafast dynamics of defect-assisted electron-hole recombination in monolayer MoS2. Nano Lett. 2015, 15, 339–345.
Crossref Google Scholar
[52]

Smith, L. M.; Wake, D. R.; Wolfe, J. P.; Levi, D.; Klein, M. V.; Klem, J.; Henderson, T.; Morkoç, H. Picosecond imaging of photoexcited carriers in quantum wells: Anomalous lateral confinement at high densities. Phys. Rev. B 1988, 38, 5788–5791.
Crossref Google Scholar
[53]

Yue, S.; Tian, F.; Sui, X.; Mohebinia, M.; Wu, X. X.; Tong, T.; Wang, Z. M.; Wu, B.; Zhang, Q.; Ren, Z. F. et al. High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy. Science 2022, 377, 433–436.
Crossref Google Scholar
Nano Research
Volume 16 Issue 11,
November 2023
Pages 12738-12744
DOI: 10.1007/s12274-023-6143-7
Cite this article:
Bai Z, Zhang H, He J, et al. Enhanced carrier mobility in MoSe2 by pressure modulation. Nano Research, 2023, 16(11): 12738-12744. https://doi.org/10.1007/s12274-023-6143-7
Topics:
Semiconductors

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Received: 30 June 2023
Revised: 16 August 2023
Accepted: 30 August 2023
Published: 12 October 2023
© Tsinghua University Press 2023
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