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Research Article

Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

Jidong Huang1,2, Jingren Chen1,2, Junhua Meng3, Siyu Zhang1,2, Ji Jiang1,2, Jingzhen Li1,2, Libin Zeng1,2, Zhigang Yin1,2, Jinliang Wu1, Xingwang Zhang1,2 ( )
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Faculty of Science, Beijing University of Technology, Beijing 100124, China
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Graphical Abstract

Remote heteroepitaxy of single-crystal ZrS2 is realized using hexagonal boron nitride (h-BN) as interlayer because the potential field of sapphire can penetrate monolayer h-BN. Due to the weak interfacial scattering and high crystalline quality of ZrS2 epilayer, the ZrS2 photodetector with monolayer h-BN shows the best performance. The remote epitaxy using h-BN can be extended to a wide range of two-dimensional (2D) heterostructures, exhibiting great potential in developing large-area 2D electronic devices.

Abstract

As a very promising epitaxy technology, the remote epitaxy has attracted extensive attention in recent years, in which graphene is the most used interlayer material. As an isomorphic of graphene, two-dimensional (2D) hexagonal boron nitride (h-BN), is another promising interlayer for the remote epitaxy. However, there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy. Herein, we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN, and hence the remote epitaxy of ZrS2 layers can be realized on sapphire substrates through monolayer h-BN. The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals (vdWs) epitaxy. Due to the weak interfacial scattering and high crystalline quality of ZrS2 epilayer, the ZrS2 photodetector with monolayer h-BN shows the best performance, with an on/off ratio of more than 2 × 105 and a responsivity up to 379 mA·W−1. This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN, which have great potential in developing large-area 2D electronic devices.

Keywords

remote epitaxyhexagonal boron nitridetransition metal dichalcogenideschemical vapor depositionphotodetectors

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Nano Research
Volume 17 Issue 4,
April 2024
Pages 3224-3231
DOI: 10.1007/s12274-023-6171-3
Cite this article:
Huang J, Chen J, Meng J, et al. Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride. Nano Research, 2024, 17(4): 3224-3231. https://doi.org/10.1007/s12274-023-6171-3
Topics:
Epitaxial growthLayered semiconductors

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Received: 06 August 2023
Revised: 29 August 2023
Accepted: 07 September 2023
Published: 02 October 2023
© Tsinghua University Press 2023
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