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Research Article

Enhanced exciton diffusion from interlayer charge-transfer transitions in PtSe2/MoSe2 van der Waals heterojunction

Jiarong Wang1, Dawei He1, Zhiying Bai1, Guili Li1, Jinxuan Bai1, Keqin Liu2, Fangying Ren1, Xiaojing Liu1, Jiaqi He6, Weiya Zhou7,8, Jianlin Sun7,8, Yongsheng Wang1( ), Xiaoxian Zhang1( ), Yuchao Yang2,3,4,5( )
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing 100871, China
School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
Center for Brain Inspired Chips, Institute for Artificial Intelligence, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing 102206, China
College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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Graphical Abstract

Combining pump-probe spectroscopy and scanning probe microscopy, we systematically investigated the intrinsic optical and electrical properties of the PtSe2/MoSe2 heterojunction.

Abstract

Artificial van der Waals (vdWs) heterostructures offer unprecedented opportunities to explore and reveal novel synergistic electronic and optical phenomena, which are beneficial for the development of novel optoelectronic devices at atomic limits. However, due to the damage caused by the device fabrication process, their inherent properties such as carrier mobility are obscured, which hinders the improvement of device performance and the incorporation of vdWs materials into next-generation integrated circuits. Herein, combining pump-probe spectroscopic and scanning probe microscopic techniques, the intrinsic optoelectronic properties of PtSe2/MoSe2 heterojunction were nondestructively and systematically investigated. The heterojunction exhibits a broad-spectrum optical response and maintains ultrafast carrier dynamics (interfacial charge transfer ~ 0.8 ps and carrier lifetime ~ 38.2 ps) simultaneously. The in-plane exciton diffusion coefficient of the heterojunction was extracted (19.4 ± 7.6 cm2∙s−1), and its exciton mobility as high as 756.8 cm2∙V−1∙s−1 was deduced, exceeding the value of its components. This enhancement was attributed to the formation of an n-type Schottky junction between PtSe2 and MoSe2, and its built-in electric field assisted the ultrafast transfer of photogenerated carriers from MoSe2 to PtSe2, enhancing the in-plane exciton diffusion of the heterojunction. Our results demonstrate that PtSe2/MoSe2 is suitable for the development of broad-spectrum and sensitive optoelectronic devices. Meanwhile, the results contribute to a fundamental understanding of the performance of various optoelectronic devices based on such PtSe2 two-dimensional (2D) heterostructures.

Keywords

van der Waals heterostructuresultrafast carrier dynamicsexciton diffusionpump-probe spectroscopyscanning probe microscopy

Electronic Supplementary Material

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Nano Research
Volume 16 Issue 11,
November 2023
Pages 12809-12816
DOI: 10.1007/s12274-023-6195-8
Cite this article:
Wang J, He D, Bai Z, et al. Enhanced exciton diffusion from interlayer charge-transfer transitions in PtSe2/MoSe2 van der Waals heterojunction. Nano Research, 2023, 16(11): 12809-12816. https://doi.org/10.1007/s12274-023-6195-8
Topics:
Ultrafast carrier dynamics

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Received: 19 July 2023
Revised: 30 August 2023
Accepted: 12 September 2023
Published: 24 October 2023
© Tsinghua University Press 2023
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