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Research Article

Regulating the conductance of tungsten diselenide by oxygen plasma and improving its electrical stability by encapsulation

Zhaofang Cheng1,2,§, Shaodan He2,§, Shimin Zhang2,§, Shijun Duan2, Min Wang2, Ziyu Liu2, Rong Zhang2, Wenya Qiang2, Xudong Zhang2, Minggang Xia1,2,3( )
MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi’an Jiaotong University, Xi’an 710049, China
Department of Applied Physics, School of Physics, Xi’an Jiaotong University, Xi’an 710049, China
Shaanxi Province Key Laboratory of Quantum Information and Optoelectronic Quantum Devices, School of Physics, Xi’an Jiaotong University, Xi’an 710049, China

§ Zhaofang Cheng, Shaodan He, and Shimin Zhang contributed equally to this work.

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A dynamic shielding strategy was developed to construct a formulation of outer membrane vesicles-cleavable peptide linker-doxorubicin-loaded serum albumin (OMV-cL-AD) for a safe and efficient anti-tumor combination therapy. OMV-cL-AD was cleaved by the over-expressed matrix metalloproteinase (MMP) in the tumor microenvironment (TME) to expose OMVs and release AD, which enabled synergistic tumor inhibition by eliciting OMV-induced immunotherapy to reprogram the immunosuppressive TME and using doxorubicin-induced chemotherapy to kill the tumor cells directly.

Abstract

Two-dimensional (2D) tungsten selenide (WSe2) is promising candidate material for future electronic applications, owing to its potential for ultimate device scaling. For improving the electronic performance of WSe2-based field-effect transistors (FETs), the modification of surface properties is essential. In this study, the seamless structural phase transition in WSe2 lattice is achieved by soft oxygen plasma, regulating the electrical conductance of WSe2-based FETs. We found that during the soft oxygen plasma treatment with optimal processing time, the generated oxygen ions can substitute some selenium atoms and thus locally modify the bond length, inducing 2H → 1T phase transition in WSe2 with seamless interfaces. The mosaic structures have been proven to tailor the electronic structure and increase the hole carrier concentration inside WSe2, significantly increasing the channel conductance of WSe2 FETs. With the further increase of the oxygen plasma treatment time, the creation of more selenium vacancy defects leads to the electronic doping, resulting in the reduction of conductance. Benefiting from the hexagonal boron nitride (h-BN) encapsulation to interrupt the partial structural relaxation from 1T to 2H phase, our WSe2 FET exhibits high electronic stability with conductance of 6.8 × 10−4 S, which is about four orders of magnitude higher than 2H WSe2 (5.8 × 10−8 S). This study could further broaden the WSe2 FETs in applications for functionalization and integration in electronics.

Keywords

tungsten selenide (WSe2)structural phase transitionoxygen plasmaconductancehexagonal boron nitride (h-BN) encapsulation

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Nano Research
Volume 17 Issue 4,
April 2024
Pages 3253-3260
DOI: 10.1007/s12274-023-6235-8
Cite this article:
Cheng Z, He S, Zhang S, et al. Regulating the conductance of tungsten diselenide by oxygen plasma and improving its electrical stability by encapsulation. Nano Research, 2024, 17(4): 3253-3260. https://doi.org/10.1007/s12274-023-6235-8
Topics:
Electron devicesField effect transistorsSemiconductor devices

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Received: 15 August 2023
Revised: 22 September 2023
Accepted: 25 September 2023
Published: 03 November 2023
© Tsinghua University Press 2023
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