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Research Article

Towards growth of pure AB-stacked bilayer graphene single crystals

Xiaowen Zhang1,2,3,§, Tao Zhou1,2,§, Yunlong Ren1,2,§, Zuo Feng4,§, Ruixi Qiao5, Qinghe Wang4, Bin Wang1,2, Jinxia Bai1,2, Muhong Wu4,6,7, Zhilie Tang1,2, Xu Zhou1,2, Kaihui Liu4,6,7, Xiaozhi Xu1,2( )
Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510006, China
Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics, South China Normal University, Guangzhou 510006, China
Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955–6900, Saudi Arabia
State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210094, China
International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan 523808, China

§ Xiaowen Zhang, Tao Zhou, Yunlong Ren, and Zuo Feng contributed equally to this work.

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Graphical Abstract

Particles on the Cu/Ni (1 1 1) surface are effectively eliminated by a heat-resisting-box. Then, nearly pure AB-stacked bilayer graphene single-crystal films on Cu/Ni (1 1 1) foils can be produced.

Abstract

Given its intriguing band structure and unique tunable bandgap, AB-stacked bilayer graphene has great potentials in the applications of high-end electronics, optoelectronics and semiconductors. The epitaxial growth of AB-stacked single-crystal bilayer graphene films requires a strict AB-stacked lattice, identical orientations and seamless stitching of bilayer graphene islands. However, the particles inevitably present on the metal surface that produced during high temperature growth would induce random orientations, twisted stacking islands, and uncontrollable multilayers, which is a great challenge to overcome. Here, we propose a heat-resisting-box assisted strategy to produce nearly pure AB-stacked bilayer graphene single-crystal films on Cu/Ni (111) foils. With our technique, the particles on the Cu/Ni (111) surface are effectively eliminated, which greatly minimizes the occurrence of randomly twisted islands and uncontrollable multilayers. The as-grown AB-stacked bilayer graphene films show > 99% alignment and > 99% AB stacking order. Our work provides a promising method towards the growth of pure AB-stacked bilayer graphene single crystals and would accelerate its device applications.

Keywords

bilayer grapheneAB stackinguniform growthheat-resisting box

Electronic Supplementary Material

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Nano Research
Volume 17 Issue 5,
May 2024
Pages 4616-4621
DOI: 10.1007/s12274-023-6348-9
Cite this article:
Zhang X, Zhou T, Ren Y, et al. Towards growth of pure AB-stacked bilayer graphene single crystals. Nano Research, 2024, 17(5): 4616-4621. https://doi.org/10.1007/s12274-023-6348-9
Topics:
Epitaxial growthFilm growth

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Received: 03 September 2023
Revised: 27 October 2023
Accepted: 17 November 2023
Published: 19 January 2024
© Tsinghua University Press 2024
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