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Research Article

In-situ fabrication of on-chip 1T'-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing

Menglei Zhu1, Kunxuan Liu2, Di Wu1( ), Yunrui Jiang2, Xue Li1, Pei Lin1, Zhifeng Shi1, Xinjian Li1, Ran Ding3, Yalun Tang2, Xuechao Yu4, Longhui Zeng1( )
School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Graphical Abstract

A 1T’-MoTe2/Ge Schottky junction photodetector has been in-situ fabricated for high-sensitive broadband infrared detection, imaging and position sensing.

Abstract

High-sensitivity room-temperature multi-dimensional infrared (IR) detection is crucial for military and civilian purposes. Recently, the gapless electronic structures and unique optoelectrical properties have made the two-dimensional (2D) topological semimetals promising candidates for the realization of multifunctional optoelectronic devices. Here, we demonstrated the in-situ construction of high-performance 1T’-MoTe2/Ge Schottky junction device by inserting an ultrathin AlOx passivation layer. The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron, an ultrafast response time of ~ 160 ns, and a large specific detectivity of over 109 Jones in mid-infrared (MIR) range surpasses that of most 2D materials-based IR sensors, approaching the performance of commercial IR photodiodes. The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature. All these outstanding detection features have enabled the demonstration of position-sensitive detection applications. It demonstrates an exceptional position sensitivity of 14.9 mV/mm, an outstanding nonlinearity of 6.44%, and commendable trajectory tracking and optoelectronic demodulation capabilities. This study not only offers a promising route towards room-temperature MIR optoelectronic applications, but also demonstrates a great potential for application in optical sensing systems.

Keywords

MoTe2broadband photodetectionSchottky junctionimagingposition sensitive detector

Electronic Supplementary Material

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References

[1]

Liu, C. Y.; Guo, J. S.; Yu, L. W.; Li, J.; Zhang, M.; Li, H.; Shi, Y. C.; Dai, D. X. Silicon/2D-material photodetectors: From near-infrared to mid-infrared. Light: Sci. Appl. 2021, 10, 123.
Crossref Google Scholar
[2]

Wang, F. K.; Zhang, Y.; Gao, Y.; Luo, P.; Su, J. W.; Han, W.; Liu, K. L.; Li, H. Q.; Zhai, T. Y. 2D metal chalcogenides for IR photodetection. Small 2019, 15, 1901347.
Crossref Google Scholar
[3]

Wang, P.; Xia, H.; Li, Q.; Wang, F.; Zhang, L. L.; Li, T. X.; Martyniuk, P.; Rogalski, A.; Hu, W. D. Sensing infrared photons at room temperature: From bulk materials to atomic layers. Small 2019, 15, 1904396.
Crossref Google Scholar
[4]

Yao, J. D.; Yang, G. W. 2D material broadband photodetectors. Nanoscale 2020, 12, 454–476.
Crossref Google Scholar
[5]

Bao, Q. L.; Loh, K. P. Graphene photonics, plasmonics, and broadband optoelectronic devices. ACS Nano 2012, 6, 3677–3694.
Crossref Google Scholar
[6]

Wang, W. H.; Yan, Z. Z.; Zhang, J. F.; Lu, J. P.; Qin, H.; Ni, Z. H. High-performance position-sensitive detector based on graphene-silicon heterojunction. Optica 2018, 5, 27–31.
Crossref Google Scholar
[7]

Wang, W. H.; Lu, J. P.; Ni, Z. H. Position-sensitive detectors based on two-dimensional materials. Nano Res. 2021, 14, 1889–1900.
Crossref Google Scholar
[8]

Zhong, F.; Wang, H.; Wang, Z.; Wang, Y.; He, T.; Wu, P. S.; Peng, M.; Wang, H. L.; Xu, T. F.; Wang, F. et al. Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies. Nano Res. 2021, 14, 1840–1862.
Crossref Google Scholar
[9]

Piotrowski, J.; Rogalski, A. Uncooled long wavelength infrared photon detectors. Infrared Phys. Technol. 2004, 46, 115–131.
Crossref Google Scholar
[10]

Rogalski, A. New material systems for third generation infrared photodetectors. Opto-Electron. Rev. 2008, 16, 458–482.
Crossref Google Scholar
[11]

Qiu, Q. X.; Huang, Z. M. Photodetectors of 2D materials from ultraviolet to terahertz waves. Adv. Mater. 2021, 33, 2008126.
Crossref Google Scholar
[12]

Wang, H. Y.; Li, Z. X.; Li, D. Y.; Chen, P.; Pi, L. J.; Zhou, X.; Zhai, T. Y. Van der Waals integration based on two-dimensional materials for high-performance infrared photodetectors. Adv. Funct. Mater. 2021, 31, 2103106.
Crossref Google Scholar
[13]

Liu, J.; Xia, F. N.; Xiao, D.; García de Abajo, F. J.; Sun, D. Semimetals for high-performance photodetection. Nat. Mater. 2020, 19, 830–837.
Crossref Google Scholar
[14]

Zeng, L. H.; Han, W.; Ren, X. Y.; Li, X.; Wu, D.; Liu, S. J.; Wang, H.; Lau, S. P.; Tsang, Y. H.; Shan, C. X. et al. Uncooled mid-infrared sensing enabled by chip-integrated low-temperature-grown 2D PdTe2 Dirac semimetal. Nano Lett. 2023, 23, 8241–8248.
Crossref Google Scholar
[15]

Wu, Y. P.; Wu, S. E.; Hei, J. J.; Zeng, L. H.; Lin, P.; Shi, Z. F.; Chen, Q. M.; Li, X. J.; Yu, X. C.; Wu, D. Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging. Nano Res. 2023, 16, 11422–11429.
Crossref Google Scholar
[16]

Wu, D.; Xu, M. M.; Zeng, L. H.; Shi, Z. F.; Tian, Y. Z.; Li, X. J.; Shan, C. X.; Jie, J. S. In situ fabrication of PdSe2/GaN schottky junction for polarization-sensitive ultraviolet photodetection with high dichroic ratio. ACS Nano 2022, 16, 5545–5555.
Crossref Google Scholar
[17]

Wu, D.; Tian, R.; Lin, P.; Shi, Z. F.; Chen, X.; Jia, M. C.; Tian, Y. T.; Li, X. J.; Zeng, L. H.; Jie, J. S. Wafer-scale synthesis of wide bandgap 2D GeSe2 layers for self-powered ultrasensitive UV photodetection and imaging. Nano Energy 2022, 104, 107972.
Crossref Google Scholar
[18]

Akinwande, D.; Huyghebaert, C.; Wang, C. H.; Serna, M. I.; Goossens, S.; Li, L. J.; Wong, H. S. P.; Koppens, F. H. L. Graphene and two-dimensional materials for silicon technology. Nature 2019, 573, 507–518.
Crossref Google Scholar
[19]

Wu, D.; Guo, C. G.; Zeng, L. H.; Ren, X. Y.; Shi, Z. F.; Wen, L.; Chen, Q.; Zhang, M.; Li, X. J.; Shan, C. X. et al. Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection. Light: Sci. Appl. 2023, 12, 5.
Crossref Google Scholar
[20]

Lu, Z. J.; Xu, Y.; Yu, Y. Q.; Xu, K. W.; Mao, J.; Xu, G. B.; Ma, Y. M.; Wu, D.; Jie, J. S. Ultrahigh speed and broadband few-layer MoTe2/Si 2D-3D heterojunction-based photodiodes fabricated by pulsed laser deposition. Adv. Funct. Mater. 2020, 30, 1907951.
Crossref Google Scholar
[21]

Lai, J. W.; Liu, X.; Ma, J. C.; Wang, Q. S.; Zhang, K. N.; Ren, X.; Liu, Y. N.; Gu, Q. Q.; Zhuo, X.; Lu, W. et al. Anisotropic broadband photoresponse of layered type-II weyl semimetal MoTe2. Adv. Mater. 2018, 30, 1707152.
Crossref Google Scholar
[22]

Maiti, R.; Patil, C.; Saadi, M. A. S. R.; Xie, T.; Azadani, J. G.; Uluutku, B.; Amin, R.; Briggs, A. F.; Miscuglio, M.; Van Thourhout, D. et al. Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits. Nat. Photonics 2020, 14, 578–584.
Crossref Google Scholar
[23]

Zhou, Z. W.; Song, Q.; Xu, Y. F.; Liang, H. W.; Zhang, M.; Zhang, B.; Yan, P. G. Magnetron sputtering deposited large-scale Weyl semimetal THz detector. Infrared Phys. Technol. 2022, 121, 104060.
Crossref Google Scholar
[24]

Chen, W. J.; Liang, R. R.; Zhang, S. Q.; Liu, Y.; Cheng, W. J.; Sun, C. C.; Xu, J. Ultrahigh sensitive near-infrared photodetectors based on MoTe2/germanium heterostructure. Nano Res. 2020, 13, 127–132.
Crossref Google Scholar
[25]

Xie, C.; Wang, Y.; Zhang, Z. X.; Wang, D.; Luo, L. B. Graphene/semiconductor hybrid heterostructures for optoelectronic device applications. Nano Today 2018, 19, 41–83.
Crossref Google Scholar
[26]

Yang, W. H.; Jiang, X. Y.; Xiao, Y. T.; Fu, C.; Wan, J. K.; Yin, X.; Tong, X. W.; Wu, D.; Chen, L. M.; Luo, L. B. Detection of wavelength in the range from ultraviolet to near infrared light using two parallel PtSe2/thin Si Schottky junctions. Mater. Horiz. 2021, 8, 1976–1984.
Crossref Google Scholar
[27]

Goykhman, I.; Sassi, U.; Desiatov, B.; Mazurski, N.; Milana, S.; de Fazio, D.; Eiden, A.; Khurgin, J.; Shappir, J.; Levy, U. et al. On-chip integrated, silicon-graphene plasmonic schottky photodetector with high responsivity and avalanche photogain. Nano Lett. 2016, 16, 3005–3013.
Crossref Google Scholar
[28]

Mao, J.; Zhang, B. C.; Shi, Y. H.; Wu, X. F.; He, Y. Y.; Wu, D.; Jie, J. S.; Lee, C. S.; Zhang, X. H. Conformal MoS2/silicon nanowire array heterojunction with enhanced light trapping and effective interface passivation for ultraweak infrared light detection. Adv. Funct. Mater. 2022, 32, 2108174.
Crossref Google Scholar
[29]

Martin, A. A.; Calta, N. P.; Khairallah, S. A.; Wang, J.; Depond, P. J.; Fong, A. Y.; Thampy, V.; Guss, G. M.; Kiss, A. M.; Stone, K. H. et al. Dynamics of pore formation during laser powder bed fusion additive manufacturing. Nat. Commun. 2019, 10, 1987.
Crossref Google Scholar
[30]

Wu, D.; Guo, J. W.; Wang, C. Q.; Ren, X. Y.; Chen, Y. S.; Lin, P.; Zeng, L. H.; Shi, Z. F.; Li, X. J.; Shan, C. X. et al. Ultrabroadband and high-detectivity photodetector based on WS2/Ge heterojunction through defect engineering and interface passivation. ACS Nano 2021, 15, 10119–10129.
Crossref Google Scholar
[31]

Wu, D.; Guo, J. W.; Du, J.; Xia, C. X.; Zeng, L. H.; Tian, Y. Z.; Shi, Z. F.; Tian, Y. T.; Li, X. J.; Tsang, Y. H. et al. Highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction. ACS Nano 2019, 13, 9907–9917.
Crossref Google Scholar
[32]

Lee, C. H.; Park, Y.; Youn, S.; Yeom, M. J.; Kum, H. S.; Chang, J.; Heo, J.; Yoo, G. Design of p-WSe2/n-Ge heterojunctions for high-speed broadband photodetectors. Adv. Funct. Mater. 2022, 32, 2107992.
Crossref Google Scholar
[33]

Ye, L.; Wang, P.; Luo, W. J.; Gong, F.; Liao, L.; Liu, T. D.; Tong, L.; Zang, J. F.; Xu, J. B.; Hu, W. D. Highly polarization sensitive infrared photodetector based on black phosphorus-on-WSe2 photogate vertical heterostructure. Nano Energy 2017, 37, 53–60.
Crossref Google Scholar
[34]

Ye, L.; Li, H.; Chen, Z. F.; Xu, J. B. Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photonics 2016, 3, 692–699.
Crossref Google Scholar
[35]

Jiao, H. X.; Wang, X. D.; Chen, Y.; Guo, S. F.; Wu, S. Q.; Song, C. Y.; Huang, S. Y.; Huang, X. N.; Tai, X. C.; Lin, T. et al. HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector. Sci. Adv. 2022, 8, eabn1811.
Crossref Google Scholar
[36]

Chen, Y. F.; Wang, Y.; Wang, Z.; Gu, Y.; Ye, Y.; Chai, X. L.; Ye, J. F.; Chen, Y.; Xie, R. Z.; Zhou, Y. et al. Unipolar barrier photodetectors based on van der Waals heterostructures. Nat. Electron. 2021, 4, 357–363.
Crossref Google Scholar
[37]

Chi, S. M.; Li, Z. L.; Xie, Y.; Zhao, Y. G.; Wang, Z. Y.; Li, L.; Yu, H. H.; Wang, G.; Weng, H. M.; Zhang, H. J. et al. A wide-range photosensitive Weyl semimetal single crystal-TaAs. Adv. Mater. 2018, 30, 1801372.
Crossref Google Scholar
[38]

Xie, Y.; Zhang, B.; Wang, S. X.; Wang, D.; Wang, A. Z.; Wang, Z. Y.; Yu, H. H.; Zhang, H. J.; Chen, Y. X.; Zhao, M. W. et al. Ultrabroadband MoS2 photodetector with spectral response from 445 to 2717 nm. Adv. Mater. 2017, 29, 1605972.
Crossref Google Scholar
[39]

Yao, J. R.; Chen, F. F.; Li, J. J.; Du, J. L.; Wu, D.; Tian, Y. T.; Zhang, C.; Yang, J. K.; Li, X. J.; Lin, P. A high-performance short-wave infrared phototransistor based on a 2D tellurium/MoS2 van der Waals heterojunction. J. Mater. Chem. C 2021, 9, 13123–13131.
Crossref Google Scholar
[40]

Amani, M.; Tan, C. L.; Zhang, G.; Zhao, C. S.; Bullock, J.; Song, X. H.; Kim, H.; Shrestha, V. R.; Gao, Y.; Crozier, K. B. et al. Solution-synthesized high-mobility tellurium nanoflakes for short-wave infrared photodetectors. ACS Nano 2018, 12, 7253–7263.
Crossref Google Scholar
[41]

Bullock, J.; Amani, M.; Cho, J.; Chen, Y. Z.; Ahn, G. H.; Adinolfi, V.; Shrestha, V. R.; Gao, Y.; Crozier, K. B.; Chueh, Y. L. et al. Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature. Nat. Photonics 2018, 12, 601–607.
Crossref Google Scholar
[42]

Tian, Z. B.; Krishna, S. Mid-infrared metamorphic interband cascade photodetectors on GaAs substrates. Appl. Phys. Lett. 2015, 107, 211114.
Crossref Google Scholar
[43]

Yin, C. J.; Gong, C. H.; Chu, J. W.; Wang, X. D.; Yan, C. Y.; Qian, S. F.; Wang, Y.; Rao, G. F.; Wang, H. B.; Liu, Y. Q. et al. Ultrabroadband photodetectors up to 10.6 µm based on 2D Fe3O4 nanosheets. Adv. Mater. 2020, 32, 2002237.
Crossref Google Scholar
[44]

Harrer, A.; Schwarz, B.; Schuler, S.; Reininger, P.; Wirthmüller, A.; Detz, H.; MacFarland, D.; Zederbauer, T.; Andrews, A. M.; Rothermund, M. et al. 4.3 μm quantum cascade detector in pixel configuration. Opt. Express 2016, 24, 17041–17049
Crossref Google Scholar
[45]

Long, M. S.; Gao, A. Y.; Wang, P.; Xia, H.; Ott, C.; Pan, C.; Fu, Y. J.; Liu, E. F.; Chen, X. S.; Lu, W. et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci. Adv. 2017, 3, e1700589.
Crossref Google Scholar
[46]

Chen, C. H.; Yi, X. J.; Zhang, J.; Zhao, X. R. Linear uncooled microbolometer array based on VO x thin films. Infrared Phys. Technol. 2001, 42, 87–90.
Crossref Google Scholar
[47]

Long, M. S.; Wang, Y.; Wang, P.; Zhou, X. H.; Xia, H.; Luo, C.; Huang, S. Y.; Zhang, G. W.; Yan, H. G.; Fan, Z. Y. et al. Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability. ACS Nano 2019, 13, 2511–2519.
Crossref Google Scholar
[48]

Yu, X. C.; Yu, P.; Wu, D.; Singh, B.; Zeng, Q. S.; Lin, H.; Zhou, W.; Lin, J. H.; Suenaga, K.; Liu, Z. et al. Atomically thin noble metal dichalcogenide: A broadband mid-infrared semiconductor. Nat. Commun. 2018, 9, 1545.
Crossref Google Scholar
[49]

Chen, X. X.; Yang, X.; Lou, Q.; Tian, Y. Z.; Liu, Z. Y.; Lv, C. F.; Chen, Y. C.; Dong, L.; Shan, C. X. Ultrasensitive broadband position-sensitive detector based on graphitic carbon nitride. Nano Res. 2023, 16, 1277–1285.
Crossref Google Scholar
[50]

Cong, R. D.; Qiao, S.; Liu, J. H.; Mi, J. S.; Yu, W.; Liang, B. L.; Fu, G. S.; Pan, C. F.; Wang, S. F. Ultrahigh, ultrafast, and self-powered visible-near-infrared optical position-sensitive detector based on a CVD-prepared vertically standing few-layer MoS2/Si heterojunction. Adv. Sci. 2018, 5, 1700502.
Crossref Google Scholar
[51]

Fortunato, E.; Lavareda, G.; Martins, R.; Soares, F.; Fernandes, L. Large-area 1D thin-film position-sensitive detector with high detection resolution. Sens. Actuators A: Phys. 1995, 51, 135–142.
Crossref Google Scholar
[52]

Henry, J.; Livingstone, J. Thin-film amorphous silicon position-sensitive detectors. 3.0.CO;2-I">Adv. Mater. 2001, 13, 1022–1026.
Crossref Google Scholar
[53]

Hu, C.; Wang, X. J.; Song, B. High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials. Light: Sci. Appl. 2020, 9, 88.
Crossref Google Scholar
[54]

Zhou, G. D.; Sun, B.; Hu, X. F.; Sun, L. F.; Zou, Z.; Xiao, B.; Qiu, W. K.; Wu, B.; Li, J.; Han, J. J. et al. Negative photoconductance effect: An extension function of the TiO x -based memristor. Adv. Sci. 2021, 8, 2003765.
Crossref Google Scholar
Nano Research
Volume 17 Issue 6,
June 2024
Pages 5587-5594
DOI: 10.1007/s12274-024-6510-z
Cite this article:
Zhu M, Liu K, Wu D, et al. In-situ fabrication of on-chip 1T'-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing. Nano Research, 2024, 17(6): 5587-5594. https://doi.org/10.1007/s12274-024-6510-z
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Photodetectors

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Received: 23 December 2023
Revised: 11 January 2024
Accepted: 21 January 2024
Published: 29 February 2024
© Tsinghua University Press 2024
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