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Research Article

On-chip integrated GeSe2/Si vdW heterojunction for ultraviolet-enhanced broadband photodetection, imaging, and secure optical communication

Zhiman Zhou1, Kunxuan Liu2, Di Wu1( ), Yunrui Jiang2, Ranran Zhuo1, Pei Lin1, Zhifeng Shi1, Yongtao Tian1, Wei Han3( ), Longhui Zeng1, Xinjian Li1
School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou 450052, China
Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, USA
Institute of Microelectronics and Integrated Circuits, School of Microelectronics, Hubei University, Wuhan 430062, China
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Graphical Abstract

High-quality GeSe2/Si van der Waals (vdW) heterojunction photodetector and an integrated device array are in-situ fabricated, which show ultraviolet (UV)-enhanced broadband self-driven photodetection and imaging performances.

Abstract

Broadband photodetection, spanning from ultraviolet (UV) to infrared (IR), is pivotal in diverse technological domains including astronomy, remote sensing, environmental monitoring, and medical diagnostics. However, current commercially available broadband photodetectors, predominately based on conventional narrow-bandgap semiconductors, exhibit limited sensitivity in the UV region. This limitation, stemming from the significant energy disparity between the semiconductor bandgap and UV photon, narrows their application scope. Herein, we report an innovative approach involving the in-situ van der Waals (vdW) integration of two-dimensional (2D) GeSe2 layers onto a Si substrate. This process yields a high-quality GeSe2/Si vdW heterojunction device, which features a broad response range covering from UV to near-IR (NIR) with a greatly-enhanced sensitivity in the UV region. The device possesses high responsivities of 325 and 533.4 mA/W, large detectivities of 1.24 × 1013 and 2.57 × 1013 Jones, and fast response speeds of 20.6/82.1 and 17.7/81.0 μs under 360 and 980 nm, respectively. Notably, the broadband image sensing and secure invisible optical communication capabilities of the GeSe2/Si heterojunction device are demonstrated. Our work provides a viable approach for UV-enhanced broadband photodetection technology, opening up new possibilities and applications across various scientific and technological domains.

Keywords

germanium diselenidevan der Waals (vdW) integrationultraviolet enhancedbroadband photodetectionimaging

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Nano Research
Volume 17 Issue 7,
July 2024
Pages 6544-6549
DOI: 10.1007/s12274-024-6564-x
Cite this article:
Zhou Z, Liu K, Wu D, et al. On-chip integrated GeSe2/Si vdW heterojunction for ultraviolet-enhanced broadband photodetection, imaging, and secure optical communication. Nano Research, 2024, 17(7): 6544-6549. https://doi.org/10.1007/s12274-024-6564-x
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Photodetectors

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Received: 16 December 2023
Revised: 01 February 2024
Accepted: 14 February 2024
Published: 22 April 2024
© Tsinghua University Press 2024
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