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Research Article

Epitaxial quasi-2D/3D hybrid perovskite heterojunctions for photodetector with enhanced detectivity and stability

Yifu Chen1,§, Lin Zhang1,§, Xinxin Peng1, Weiran Qin1, Shiqing Li1, Yingwei Wang1,2, Zhihui Chen1,2, Si Xiao1,2, Bin Yang3, Biao Liu4, Junliang Yang1,4, Han Huang1,2, Yun Lin2,4, Jun He1,2, Liming Ding5(), Yongbo Yuan1,2()
Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha 410083, China
Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China
College of Materials Science and Engineering, Hunan University, Changsha 410082, China
Department of Photoelectric Information, School of Physics, Central South University, Changsha 410083, China
Center for Excellence in Nanoscience, Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Chinese Academy of Science, Beijing 100190, China

§ Yifu Chen and Lin Zhang contributed equally to this work.

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Graphical Abstract

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The methylammonium lead iodide (MAPbI3) adjacent to epitaxial quasi-two-dimensional (Q-2D) perovskite shows blue shifted photoluminescence (PL) with shortened lifetime, which becomes significant with the reduced layer number of the Q-2D perovskites. The presence of interfacial strain gradient and therefore enhanced photocarrier separation are suggested in this study.

Abstract

Although numerous metal halide perovskite materials have been investigated in the field of optoelectronic, the development of perovskite heterojunctions with exotic structures is still rare. Herein, we report the epitaxial growth of quasi-two-dimensional (Q-2D) perovskites on methylammonium lead iodide (MAPbI3) single crystals to form perovskite heterojunctions with interfacial bonding. The MAPbI3 adjacent to epitaxial Q-2D perovskite shows blue shifted photoluminescence with shortened lifetime, which becomes significant with the reduced layer number of the Q-2D perovskites. Our findings suggest the presence of an interfacial strain gradient leading to enhanced photocarrier separation. Accordingly, compared to the MAPbI3 single crystal detector, the BA2MAPb2I7/MAPbI3 (BA: n-butylamine) heterojunction-based photodetector demonstrates a bandpass detecting property and exhibits 5 times enhanced external quantum efficiency and 83 times enhanced specific detectivity (D* = 3.26 × 1011 Jones). Remarkably, the unencapsulated BA2MAPb2I7/MAPbI3 heterojunction is stable in ambient condition for > 300 days. The Q-2D/3D heterojunction shows suppressed ion inter-diffusion due to the presence of Q-2D phase.

Keywords

epitaxial growthinterfacial strainquasi-two-dimensional/three-dimensional (Q-2D/3D) heterojunctionsion inter-diffusion

Electronic Supplementary Material

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Nano Research
Volume 17 Issue 7,
July 2024
Pages 6594-6602
DOI: 10.1007/s12274-024-6703-5
Cite this article:
Chen Y, Zhang L, Peng X, et al. Epitaxial quasi-2D/3D hybrid perovskite heterojunctions for photodetector with enhanced detectivity and stability. Nano Research, 2024, 17(7): 6594-6602. https://doi.org/10.1007/s12274-024-6703-5
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