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Research Article

High photoluminescence Ag-In-Ga-S quantum dots based on ZnX2-treated surface passivation

Danni Yan, Yuhui Dong( ), Naiwei Wei, Shuai Yang, Hong Zhu, Wanzhong Gu, Yousheng Zou( ), Haibo Zeng( )
MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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Graphical Abstract

In this work, we developed a new method to enhance the photoluminescence quantum yield (PLQY) of Ag-In-Ga-S (AIGS) quantum dots (QDs) by introducing a ZnX2 ligand during purification. The introduction of ZnCl2 led to a 3-fold increase in PLQY by passivating non-coordinated atoms and establishing new bonds between sulfur-dangling bonds and Zn2+. This will further promote the application of quaternary AIGS QDs in luminescent displays.

Abstract

Quaternary Ag-In-Ga-S (AIGS) quantum dot (QD) is considered a promising, spectral-tunable, and environmentally friendly luminescent display material. However, the more complex surface defect states of AIGS QDs resulting from the coexistence of multiple elements lead to a low (< 60%) photoluminescence quantum yield (PLQY). Here, we develop a novel convenient method to introduce Z-type ligands ZnX2 (X = Cl, Br, I) for passivating the surface defects of AIGS QDs to dramatically enhance the PLQY and stability without affecting the crystalline structure and morphology. Results show that the addition of ZnCl2 during the purified process of AIGS QDs leads to a 3-fold increase of PLQY (from 28.5% to 87%). Impressively, the highest PLQY is up to a recorded value of 92%, which is comparable to typical heavy metal QDs. Exciton dynamics studies have shown that the rapid annihilation process of excitons in treated QDs is inhibited. We also confirm that the improvement in PLQY is a result of the effective passivation of the non-coordinating atom on the QD surface by building a new bonding between sulfur dangling and Zn2+. The realization of high PLQY will further promote the application of AIGS QDs in luminescent displays.

Keywords

I-III-VI quantum dotsAg-In-Ga-Ssurface defect passivationZ-type ligandphotoluminescence quantum yield

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Nano Research
Volume 17 Issue 8,
August 2024
Pages 7533-7541
DOI: 10.1007/s12274-024-6724-0
Cite this article:
Yan D, Dong Y, Wei N, et al. High photoluminescence Ag-In-Ga-S quantum dots based on ZnX2-treated surface passivation. Nano Research, 2024, 17(8): 7533-7541. https://doi.org/10.1007/s12274-024-6724-0
Topics:
PhotoluminescenceSemiconductor quantum dots

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Received: 04 February 2024
Revised: 12 April 2024
Accepted: 28 April 2024
Published: 15 June 2024
© Tsinghua University Press 2024
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