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Research Article

Overcoming side reaction effects in the colloidal synthesis of ZnSe/ZnS core/shell quantum dots with an etching strategy

Jinhua He1, Chenhui Wang2( ), Mingrui Liu1, Muhammad Ramzan1, Zhiwei Long1, Xian-gang Wu1, Yu Chen1, Haizheng Zhong1( )
MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
Beijing Engineering Research Center for Mixed Reality and Advanced Display Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
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Graphical Abstract

The negative effects of the side reactions during the synthesis of large-size ZnSe quantum dots (QDs) were eliminated by using a modified etching strategy with myristic acid (MA) and potassium fluoride (KF) in combination. High-quality ZnSe/ZnS core/shell QDs with photoluminescence quantum yield (PLQY) up to 91% were obtained, and the pure-blue quantum dot light-emitting diode (QLED) with a maximum external quantum efficiency (EQE) of 4.2% was fabricated.

Abstract

The potential use of large-size ZnSe quantum dots as blue emitters for display applications has greatly inspired the colloidal synthesis. Herein, we report the negative effects of side reactions of large-size ZnSe quantum dots. The side reactions between oleic acid and oleylamine generated amidation products and H2O, which led to the hydrolysis of Zn(OA)2 to Zn(OH)2 and the subsequent formation of zinc oxide (ZnO) and zinc bis[diphenylphosphinate] (Zn(DPPA)2) precipitates. These side reactions resulted in the formation of a defective surface including a Se-rich surface and oxygen-related defects. Such negative effects can be overcome by adopting an etching strategy using potassium fluoride and myristic acid in combination. By overcoating a ZnS shell, blue emissive ZnSe/ZnS quantum dots with a maximum photoluminescence quantum yield of up to 91% were obtained. We further fabricated ZnSe quantum dots-based blue light-emitting diodes with an emission peak at 456 nm. The device showed a turn-on voltage of 2.7 V with a maximum external quantum efficiency of 4.2% and a maximum luminance of 1223 cd·m−2.

Keywords

quantum dotsZnSeside reactionssurface etchinglight-emitting diodes

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Nano Research
Volume 17 Issue 8,
August 2024
Pages 7020-7026
DOI: 10.1007/s12274-024-6732-0
Cite this article:
He J, Wang C, Liu M, et al. Overcoming side reaction effects in the colloidal synthesis of ZnSe/ZnS core/shell quantum dots with an etching strategy. Nano Research, 2024, 17(8): 7020-7026. https://doi.org/10.1007/s12274-024-6732-0
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Nanocatalysts

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Received: 26 March 2024
Revised: 24 April 2024
Accepted: 28 April 2024
Published: 28 May 2024
© Tsinghua University Press 2024
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