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Research Article

Towards wafer-scale growth of two-dimensional cerium dioxide single crystal with high dielectric performance

Zhuofeng Shi1,2,3,§, Muhammad Imran2,3,§, Xiaohui Chen2,3,§, Xin Liu1,§, Yaqi Zhu1,2,3, Zhaoning Hu2, Saiyu Bu2, Jialin Zhang2,4, Chunhu Li4, Xiaodong Zhang1, Li Lin2,3( )
College of Chemistry and Chemical Engineering, Qingdao University, Qingdao 266000, China
School of Materials Science and Engineering, Peking University, Beijing 100871, China
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Key Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, China

§ Zhuofeng Shi, Muhammad Imran, Xiaohui Chen, and Xin Liu contributed equally to this work.

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Graphical Abstract

Enabled by the lattice symmetry between the substrate and oxide, wafer-sized growth of single-crystalline CeO2 oxide on R-plane sapphires was achieved with high dielectric strength (Ebd ≈ 8.8 MV·cm–1), suppressed leakage current, as well as high dielectric constants (εr ≈ 24).

Abstract

Owing to the atomically thin nature, two-dimensional (2D) oxide materials have been widely reported to exhibit exciting transport and dielectric properties, such as fine gate controllability and ultrahigh carrier mobility, that outperform their bulk counterpart. However, unlike the successful synthesis of bulk oxide single crystals, reliable methods for synthesizing large-area single crystal of 2D oxide, that would suppress the negative influence from defective grain boundaries, remain unavailable, especially for nonlayered oxide. Herein, we report that the lattice symmetry between the substrate and cerium dioxide (CeO2) would allow for the aligned nucleation and epitaxial growth of CeO2 on sapphire substrates, enabling the wafer-sized growth of CeO2 single crystal. The careful tuning of the growth temperature and oxygen flow rate contributed to the harvesting of CeO2 wafer with reduced thickness and enhanced growth rates. The removal of grain boundaries improved the dielectric performance in terms of high dielectric strength (Ebd ≈ 8.8 MV·cm–1), suppressed leakage current, along with high dielectric constants (εr ≈ 24). Our work demonstrates that with fine dielectric performance and ease of synthesizing wafer-sized single crystals, CeO2 can function as potential candidate as gate insulator for 2D-materials based nanoelectronics, and we believe the reported protocol of aligned nucleation can be extended to other 2D oxides.

Keywords

dielectric materialstwo-dimensional materialschemical vapor depositioncerium dioxide

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Nano Research
Volume 17 Issue 9,
September 2024
Pages 8592-8599
DOI: 10.1007/s12274-024-6761-8
Cite this article:
Shi Z, Imran M, Chen X, et al. Towards wafer-scale growth of two-dimensional cerium dioxide single crystal with high dielectric performance. Nano Research, 2024, 17(9): 8592-8599. https://doi.org/10.1007/s12274-024-6761-8
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Received: 03 January 2024
Revised: 13 May 2024
Accepted: 13 May 2024
Published: 05 July 2024
© Tsinghua University Press 2024
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