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Research Article

Observation of the failure mechanism in Ag10Ge15Te75-based memristor induced by ion transport

Yuwei Xiong1,§, Kuibo Yin1,§( ), Weiwei Sun1, Jingcang Li1, Shangyang Shang2, Lei Xin1, Qiyun Wu1, Xiaoran Gong1, Yidong Xia2, Litao Sun1( )
SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China

§ Yuwei Xiong and Kuibo Yin contributed equally to this work.

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Graphical Abstract

The five-stages operation and failure mechanisms are proposed. Ag2Te phase remains observable under reverse voltage conditions as a result of the regulated transport of Ag ions through the electric field, which not only renders the device non-bipolar but also diminishes the resistance value in the high resistance state.

Abstract

The solid-electrolyte-based memristors have attracted tremendous attention for the next-generation nonvolatile memory for both logic and neuromorphic applications. However, they encounter variability performance challenges which originated from the random ionic transport and conductive filaments formation. Evidently, the electrochemical metallized mechanism associated with ion transport has been elucidated. Nonetheless, the failure mechanism caused by ion transport during cycles is rarely reported. Hereafter, the five stages of failure in the Ag/Ag10Ge15Te75/W memristor are elucidated through ex-situ current−voltage measurements combined with in-situ transmission electron microscopy characteristics. Our investigation reveals that the migration and enrichment of Ag ions result in the precipitation of Ag2Te. The formation of Ag2Te hinders the device's ability to maintain its bipolar characteristics and also decreases the resistance value of the high resistance state, thereby reducing the device's switching ratio. The promising results provide important guidance for the future design of structures and the manipulation of ion transport for high-performance memristors.

Keywords

Ag10Ge15Te75in-situ transmission electron microscopy (TEM)failure mechanism

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Nano Research
Volume 17 Issue 9,
September 2024
Pages 8431-8437
DOI: 10.1007/s12274-024-6791-2
Cite this article:
Xiong Y, Yin K, Sun W, et al. Observation of the failure mechanism in Ag10Ge15Te75-based memristor induced by ion transport. Nano Research, 2024, 17(9): 8431-8437. https://doi.org/10.1007/s12274-024-6791-2
Topics:
Memristor

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Received: 27 March 2024
Revised: 17 May 2024
Accepted: 28 May 2024
Published: 03 July 2024
© Tsinghua University Press 2024
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