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Research Article

Giant piezotronic effect in ferroelectric field effect transistor

Haiming Zhang1,2Mengshuang Chi2,3Shidai Tian2,4Tian Liang1,2Jitao Liu2,3Xiang Zhang2,3Lingyu Wan1( )Zhong Lin Wang2,3,5( )Junyi Zhai2,3( )
Center on Nanoenergy Research, School of Physical Science & Technology, Guangxi University, Nanning 530004, China
Beijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
School of Nanoscience and Engineering, University of Chinese Academy of Science, Beijing 100049, China
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
Georgia Institute of Technology, Atlanta, GA 30332, USA
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Graphical Abstract

This work developed a strain-modulated ferroelectric field-effect transistor (St-FeFET) and investigated a novel approach to altering the ferroelectric polarization in St-FeFETs by utilizing strain rather, devices have large current changes for small strains, realized a gauge factor much higher than that of conventional strain sensors.

Abstract

The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors. Ferroelectric materials, as a type of piezoelectric materials, possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials. Here, we propose a strain modulated ferroelectric field-effect transistor (St-FeFET) utilizing external strain instead of gate voltage to achieve ferroelectric modulation, which eliminates the need for gate voltage. By applying a very small strain (0.01%), the St-FeFET can achieve a maximum on-off current ratio of 1250% and realizes a gauge factor (GF) of 1.19 × 106, which is much higher than that of conventional strain sensors. This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.

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Nano Research
Pages 8465-8471
Cite this article:
Zhang H, Chi M, Tian S, et al. Giant piezotronic effect in ferroelectric field effect transistor. Nano Research, 2024, 17(9): 8465-8471. https://doi.org/10.1007/s12274-024-6849-1
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Received: 20 May 2024
Revised: 28 June 2024
Accepted: 29 June 2024
Published: 27 July 2024
© Tsinghua University Press 2024
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