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Review Article

Substitutional doping in 2D transition metal dichalcogenides

Leyi Loh1,2,§, Zhepeng Zhang1,§, Michel Bosman2( ), Goki Eda1,3,4( )
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 2, Singapore 117542, Singapore

§ Leyi Loh and Zhepeng Zhang contributed equally to this work.

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Graphical Abstract

Abstract

Two-dimensional (2D) van der Waals transition metal dichalcogenides (TMDs) are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies. Similar to conventional semiconductors, substitutional doping is key to tailoring their electronic properties and enabling their device applications. Here, we review recent progress in doping methods and understanding of doping effects in group 6 TMDs (MX2, M = Mo, W; X = S, Se, Te), which are the most widely studied model 2D semiconductor system. Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n- or p-type dopants. This review will survey the impact of substitutional doping on the electrical and optical properties of these materials, discuss open questions, and provide an outlook for further studies.

Keywords

substitutional dopingtransition metal dichalcogenidetwo-dimensional semiconductoracceptordonor

References

[1]
P. Avouris,; T. F. Heinz,; T. Low, 2D Materials; Cambridge University Press: Cambridge, 2017.
Crossref
[2]
K. S. Novoselov,; A. Mishchenko,; A. Carvalho,; A. H. Castro Neto, 2D materials and van der Waals heterostructures. Science 2016, 353, aac9439.
Crossref Google Scholar
[3]
S. Manzeli,; D. Ovchinnikov,; D. Pasquier,; O. V. Yazyev,; A. Kis, 2D transition metal dichalcogenides. Nat. Rev. Mater. 2017, 2, 17033.
Crossref Google Scholar
[4]
A. Splendiani,; L. Sun,; Y. B. Zhang,; T. S. Li,; J. Kim,; C. Y. Chim,; G. Galli,; F. Wang, Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271-1275.
Crossref Google Scholar
[5]
K. F. Mak,; C. Lee,; J. Hone,; J. Shan,; T. F. Heinz, Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
Crossref Google Scholar
[6]
B. Radisavljevic,; A. Radenovic,; J. Brivio,; V. Giacometti,; A. Kis, Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
Crossref Google Scholar
[7]
H. Schmidt,; F. Giustiniano,; G. Eda, Electronic transport properties of transition metal dichalcogenide field-effect devices: Surface and interface effects. Chem. Soc. Rev. 2015, 44, 7715-7736.
Crossref Google Scholar
[8]
Y. Yoon,; K. Ganapathi,; S. Salahuddin, How good can monolayer MoS2 transistors be? Nano Lett. 2011, 11, 3768-3773.
Crossref Google Scholar
[9]
M. Chhowalla,; D. Jena,; H. Zhang, Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 2016, 1, 16052.
Crossref Google Scholar
[10]
S. B. Desai,; S. R. Madhvapathy,; A. B. Sachid,; J. P. Llinas,; Q. X. Wang,; G. H. Ahn,; G. Pitner,; M. J. Kim,; J. Bokor,; C. M. Hu, et al. MoS2 transistors with 1-nanometer gate lengths. Science 2016, 354, 99-102.
Crossref Google Scholar
[11]
Q. A. Vu,; Y. S. Shin,; Y. R. Kim,; V. L. Nguyen,; W. T. Kang,; H. Kim,; D. H. Luong,; I. M. Lee,; K. Lee,; D. S. Ko, et al. Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio. Nat. Commun. 2016, 7, 12725.
Google Scholar
[12]
B. Radisavljevic,; M. B. Whitwick,; A. Kis, Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 2011, 5, 9934-9938.
Google Scholar
[13]
F. H. L. Koppens,; T. Mueller,; P. Avouris,; A. C. Ferrari,; M. S. Vitiello,; M. Polini, Photodetectors based on graphene, other two- dimensional materials and hybrid systems. Nat. Nanotechnol. 2014, 9, 780-793.
Google Scholar
[14]
O. Lopez-Sanchez,; D. Lembke,; M. Kayci,; A. Radenovic,; A. Kis, Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 2013, 8, 497-501.
Google Scholar
[15]
G. Konstantatos, Current status and technological prospect of photodetectors based on two-dimensional materials. Nat. Commun. 2018, 9, 5266.
Google Scholar
[16]
J. S. Ross,; P. Klement,; A. M. Jones,; N. J. Ghimire,; J. Q. Yan,; D. G. Mandrus,; T. Taniguchi,; K. Watanabe,; K. Kitamura,; W. Yao, et al. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions. Nat. Nanotechnol. 2014, 9, 268-272.
Google Scholar
[17]
R. S. Sundaram,; M. Engel,; A. Lombardo,; R. Krupke,; A. C. Ferrari,; P. Avouris,; M. Steiner, Electroluminescence in single layer MoS2. Nano Lett. 2013, 13, 1416-1421.
Google Scholar
[18]
J. Y. Wang,; I. Verzhbitskiy,; G. Eda, Electroluminescent devices based on 2D semiconducting transition metal dichalcogenides. Adv. Mater. 2018, 30, 1802687.
Google Scholar
[19]
I. Datta,; S. H. Chae,; G. R. Bhatt,; M. A. Tadayon,; B. C. Li,; Y. L. Yu,; C. Park,; J. Park,; L. Y. Cao,; D. N. Basov, et al. Low-loss composite photonic platform based on 2D semiconductor monolayers. Nat. Photonics 2020, 14, 256-262.
Google Scholar
[20]
H. S. Lee,; S. W. Min,; Y. G. Chang,; M. K. Park,; T. Nam,; H. Kim,; J. H. Kim,; S. Ryu,; S. Im, MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 2012, 12, 3695-3700.
Google Scholar
[21]
Z. P. Sun,; A. Martinez,; F. Wang, Optical modulators with 2D layered materials. Nat. Photonics 2016, 10, 227-238.
Google Scholar
[22]
J. D. Zhou,; J. H. Lin,; X. W. Huang,; Y. Zhou,; Y. Chen,; J. Xia,; H. Wang,; Y. Xie,; H. M. Yu,; J. C. Lei, et al. A library of atomically thin metal chalcogenides. Nature 2018, 556, 355-359.
Google Scholar
[23]
J. Gao,; Y. D. Kim,; L. B. Liang,; J. C. Idrobo,; P. Chow,; J. W. Tan,; B. C. Li,; L. Li,; B. G. Sumpter,; T. M. Lu, et al. Transition-metal substitution doping in synthetic atomically thin semiconductors. Adv. Mater. 2016, 28, 9735-9743.
Google Scholar
[24]
T. Y. Zhang,; K. Fujisawa,; F. Zhang,; M. Z. Liu,; M. C. Lucking,; R. N. Gontijo,; Y. Lei,; H. Liu,; K. Crust,; T. Granzier-Nakajima, et al. Universal in situ substitutional doping of transition metal dichalcogenides by liquid-phase precursor-assisted synthesis. ACS Nano 2020, 14, 4326-4335.
Google Scholar
[25]
S. Tongay,; J. Zhou,; C. Ataca,; J. Liu,; J. S. Kang,; T. S. Matthews,; L. You,; J. B. Li,; J. C. Grossman,; J. Q. Wu, Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett. 2013, 13, 2831-2836.
Google Scholar
[26]
S. Mouri,; Y. Miyauchi,; K. Matsuda, Tunable photoluminescence of monolayer MoS2 via chemical doping. Nano Lett. 2013, 13, 5944-5948.
Google Scholar
[27]
D. Kiriya,; M. Tosun,; P. D. Zhao,; J. S. Kang,; A. Javey, Air-stable surface charge transfer doping of MoS2 by benzyl viologen. J. Am. Chem. Soc. 2014, 136, 7853-7856.
Google Scholar
[28]
Y. Jung,; Y. Zhou,; J. J. Cha, Intercalation in two-dimensional transition metal chalcogenides. Inorg. Chem. Front. 2016, 3, 452-463.
Google Scholar
[29]
A. Chanana,; S. Mahapatra, Theoretical insights to niobium-doped monolayer MoS2-gold contact. IEEE Trans. Electron Dev. 2015, 62, 2346-2351.
Google Scholar
[30]
X. Q. Lin,; J. Ni, Charge and magnetic states of Mn-, Fe-, and Co-doped monolayer MoS2. J. Appl. Phys. 2014, 116, 044311.
Google Scholar
[31]
M. Luo,; Y. H. Shen,; J. H. Chu, First-principles study of the magnetism of Ni-doped MoS2 monolayer. Jpn. J. Appl. Phys. 2016, 55, 093001.
Google Scholar
[32]
K. Dolui,; I. Rungger,; C. D. Pemmaraju,; S. Sanvito, Possible doping strategies for MoS2 monolayers: An ab initio study. Phys. Rev. B 2013, 88, 075420.
Google Scholar
[33]
X. Zhao,; P. Chen,; C. X. Xia,; T. X. Wang,; X. Q. Dai, Electronic and magnetic properties of n-type and p-doped MoS2 monolayers. RSC Adv. 2016, 6, 16772-16778.
Google Scholar
[34]
X. L. Fan,; Y. R. An,; W. J. Guo, Ferromagnetism in transitional metal-doped MoS2 monolayer. Nanoscale Res. Lett. 2016, 11, 154.
Google Scholar
[35]
I. Williamson,; S. S. Li,; A. Correa Hernandez,; M. Lawson,; Y. Chen,; L. Li, Structural, electrical, phonon, and optical properties of Ti- and V-doped two-dimensional MoS2. Chem. Phys. Lett. 2017, 674, 157-163.
Google Scholar
[36]
X. Zhao,; C. X. Xia,; T. X. Wang,; X. Q. Dai, Electronic and magnetic properties of X-doped (X = Ti, Zr, Hf) tungsten disulphide monolayer. J. Alloys Compd. 2016, 654, 574-579.
Google Scholar
[37]
A. Carvalho,; A. H. C. Neto, Donor and acceptor levels in semiconducting transition-metal dichalcogenides. Phys. Rev. B 2014, 89, 081406.
Google Scholar
[38]
H. L. Duan,; P. Guo,; C. Wang,; H. Tan,; W. Hu,; W. S. Yan,; C. Ma,; L. Cai,; L. Song,; W. H. Zhang, et al. Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers. Nat. Commun. 2019, 10, 1584.
Google Scholar
[39]
E. Z. Xu,; H. M. Liu,; K. Park,; Z. Li,; Y. Losovyj,; M. Starr,; M. Werbianskyj,; H. A. Fertig,; S. X. Zhang, P-type transition-metal doping of large-area MoS2 thin films grown by chemical vapor deposition. Nanoscale 2017, 9, 3576-3584.
Google Scholar
[40]
Y. C. Lin,; D. O. Dumcenco,; H. P. Komsa,; Y. Niimi,; A. V. Krasheninnikov,; Y. S. Huang,; K. Suenaga, Properties of individual dopant atoms in single-layer MoS2: Atomic structure, migration, and enhanced reactivity. Adv. Mater. 2014, 26, 2857-2861.
Google Scholar
[41]
S. Y. Wang,; T. S. Ko,; C. C. Huang,; D. Y. Lin,; Y. S. Huang, Optical and electrical properties of MoS2 and Fe-doped MoS2. Jpn. J. Appl. Phys. 2014, 53, 04EH07.
Google Scholar
[42]
M. Z. Zhong,; C. Shen,; L. Huang,; H. X. Deng,; G. Z. Shen,; H. Z. Zheng,; Z. M. Wei,; J. B. Li, Electronic structure and exciton shifts in Sb-doped MoS2 monolayer. npj 2D Mater. Appl. 2019, 3, 1.
Google Scholar
[43]
Z. C. Xiang,; Z. Zhang,; X. J. Xu,; Q. Zhang,; Q. B. Wang,; C. W. Yuan, Room-temperature ferromagnetism in Co doped MoS2 sheets. Phys. Chem. Chem. Phys. 2015, 17, 15822-15828.
Google Scholar
[44]
S. C. Fu,; K. Kang,; K. Shayan,; A. Yoshimura,; S. Dadras,; X. T. Wang,; L. H. Zhang,; S. W. Chen,; N. Liu,; A. Jindal, et al. Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron- doping. Nat. Commun. 2020, 11, 2034.
Google Scholar
[45]
M. Habib,; Z. Muhammad,; R. Khan,; C. Q. Wu,; Z. ur Rehman,; Y. Zhou,; H. J. Liu,; L. Song, Ferromagnetism in CVT grown tungsten diselenide single crystals with nickel doping. Nanotechnology 2018, 29, 115701.
Google Scholar
[46]
J. Wilson,; A. D. Yoffe, The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys. 1969, 18, 193-335.
Google Scholar
[47]
L. H. Brixner, Preparation and properties of the single crystalline AB2-type selenides and tellurides of niobium, tantalum, molybdenum and tungsten. J. Inorg. Nucl. Chem. 1962, 24, 257-263.
Google Scholar
[48]
W. Hicks, Semiconducting behavior of substituted tungsten diselenide and its analogues. J. Electrochem. Soc. 1964, 111, 1058-1065.
Google Scholar
[49]
P. Luo,; F. W. Zhuge,; Q. F. Zhang,; Y. Q. Chen,; L. Lv,; Y. Huang,; H. Q. Li,; T. Y. Zhai, Doping engineering and functionalization of two-dimensional metal chalcogenides. Nanoscale Horiz. 2019, 4, 26-51.
Google Scholar
[50]
K. H. Zhang,; J. Robinson, Doping of two-dimensional semiconductors: A rapid review and outlook. MRS Adv. 2019, 4, 2743-2757.
Google Scholar
[51]
A. Yoon,; Z. Lee, Synthesis and properties of two dimensional doped transition metal dichalcogenides. Appl. Microsc. 2017, 47, 19-28.
Google Scholar
[52]
T. Cheiwchanchamnangij,; W. R. L. Lambrecht, Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2. Phys. Rev. B 2012, 85, 205302.
Google Scholar
[53]
A. Molina-Sánchez,; L. Wirtz, Phonons in single-layer and few-layer MoS2 and WS2. Phys. Rev. B 2011, 84, 155413.
Google Scholar
[54]
A. H. Reshak,; S. Auluck, Calculated optical properties of 2H-MoS2 intercalated with lithium. Phys. Rev. B 2003, 68, 125101.
Google Scholar
[55]
X. L. Chen,; Z. F. Wu,; S. G. Xu,; L. Wang,; R. Huang,; Y. Han,; W. G. Ye,; W. Xiong,; T. Y. Han,; G. Long, et al. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures. Nat. Commun. 2015, 6, 6088.
Google Scholar
[56]
H. P. Komsa,; A. V. Krasheninnikov, Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2 from first principles. Phys. Rev. B 2012, 86, 241201.
Google Scholar
[57]
A. Chernikov,; T. C. Berkelbach,; H. M. Hill,; A. Rigosi,; Y. L. Li,; O. B. Aslan,; D. R. Reichman,; M. S. Hybertsen,; T. F. Heinz, Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2. Phys. Rev. Lett. 2014, 113, 076802.
Google Scholar
[58]
M. M. Ugeda,; A. J. Bradley,; S. F. Shi,; F. H. da Jornada,; Y. Zhang,; D. Y. Qiu,; W. Ruan,; S. K. Mo,; Z. Hussain,; Z. X. Shen, et al. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor. Nat. Mater. 2014, 13, 1091-1095.
Google Scholar
[59]
J. B. Li,; S. H. Wei,; L. W. Wang, Stability of the DX- center in GaAs quantum dots. Phys. Rev. Lett. 2005, 94, 185501.
Google Scholar
[60]
J. H. Yang,; B. I. Yakobson, Dimensionality-suppressed chemical doping in 2D semiconductors: The cases of phosphorene, MoS2, and ReS2 from first-principles. 2017, arXiv:1711.05094. arXiv.org e-Print archive. https://arxiv.org/abs/1711.05094 (accessed Nov 14, 2017).
[61]
W. Götz,; N. M. Johnson,; C. Chen,; H. Liu,; C. Kuo,; W. Imler, Activation energies of Si donors in GaN. Appl. Phys. Lett. 1996, 68, 3144-3146.
Google Scholar
[62]
A. Rockett,; D. D. Johnson,; S. V. Khare,; B. R. Tuttle, Prediction of dopant ionization energies in silicon: The importance of strain. Phys. Rev. B 2003, 68, 233208.
Google Scholar
[63]
S. Lu,; C. Li,; Y. F. Zhao,; Y. Y. Gong,; L. Y. Niu,; X. J. Liu, Tunable redox potential of nonmetal doped monolayer MoS2: First principle calculations. Appl. Surf. Sci. 2016, 384, 360-367.
Google Scholar
[64]
A. M. Hu,; L. L. Wang,; B. Meng,; W. Z. Xiao, Ab initio study of magnetism in nonmagnetic metal substituted monolayer MoS2. Solid State Commun. 2015, 220, 67-71.
Google Scholar
[65]
J. Y. Noh,; H. Kim,; M. Park,; Y. S. Kim, Deep-to-shallow level transition of Re and Nb dopants in monolayer MoS2 with dielectric environments. Phys. Rev. B 2015, 92, 115431.
Google Scholar
[66]
K. H. Zhang,; B. M. Bersch,; J. Joshi,; R. Addou,; C. R. Cormier,; C. X. Zhang,; K. Xu,; N. C. Briggs,; K. Wang,; S. Subramanian, et al. Tuning the electronic and photonic properties of monolayer MoS2 via in situ rhenium substitutional doping. Adv. Funct. Mater. 2018, 28, 1706950.
Google Scholar
[67]
H. Gao,; J. Suh,; M. C. Cao,; A. Y. Joe,; F. Mujid,; K. H. Lee,; S. E. Xie,; P. Poddar,; J. U. Lee,; K. Kang, et al. Tuning electrical conductance of MoS2 monolayers through substitutional doping. Nano Lett. 2020, 20, 4095-4101.
Google Scholar
[68]
V. Kochat,; A. Apte,; J. A. Hachtel,; H. Kumazoe,; A. Krishnamoorthy,; S. Susarla,; J. C. Idrobo,; F. Shimojo,; P. Vashishta,; R. Kalia, et al. Re doping in 2D transition metal dichalcogenides as a new route to tailor structural phases and induced magnetism. Adv. Mater. 2017, 29, 1703754.
Google Scholar
[69]
K. H. Zhang,; S. M. Feng,; J. J. Wang,; A. Azcatl,; N. Lu,; R. Addou,; N. Wang,; C. J. Zhou,; J. Lerach,; V. Bojan, et al. Manganese doping of monolayer MoS2: The substrate is critical. Nano Lett. 2015, 15, 6586-6591.
Google Scholar
[70]
Z. Y. Cai,; T. Z. Shen,; Q. Zhu,; S. M. Feng,; Q. M. Yu,; J. M. Liu,; L. Tang,; Y. Zhao,; J. W. Wang,; B. L. Liu, et al. Dual-additive assisted chemical vapor deposition for the growth of Mn-doped 2D MoS2 with tunable electronic properties. Small 2020, 16, 1903181.
Google Scholar
[71]
C. Huang,; Y. B. Jin,; W. Y. Wang,; L. Tang,; C. Y. Song,; F. X. Xiu, Manganese and chromium doping in atomically thin MoS2. J. Semicond. 2017, 38, 033004.
Google Scholar
[72]
Y. C. Cheng,; Z. Y. Zhu,; W. B. Mi,; Z. B. Guo,; U. Schwingenschlögl, Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems. Phys. Rev. B 2013, 87, 100401.
Google Scholar
[73]
Q. Li,; X. X. Zhao,; L. J. Deng,; Z. T. Shi,; S. Liu,; Q. L. Wei,; L. B. Zhang,; Y. C. Cheng,; L. Zhang,; H. P. Lu, et al. Enhanced valley Zeeman splitting in Fe-doped monolayer MoS2. ACS Nano 2020, 14, 4636-4645.
Google Scholar
[74]
S. C. Lu,; J. P. Leburton, Electronic structures of defects and magnetic impurities in MoS2 monolayers. Nanoscale Res. Lett. 2014, 9, 676.
Google Scholar
[75]
M. M. Liu,; S. C. Wei,; S. Shahi,; H. N. Jaiswal,; P. Paletti,; S. Fathipour,; M. Remskar,; J. Jiao,; W. Hwang,; F. Yao, et al. Enhanced carrier transport by transition metal doping in WS2 field effect transistors. Nanoscale, in press, .
Crossref Google Scholar
[76]
B. Li,; L. Huang,; M. Z. Zhong,; N. J. Huo,; Y. T. Li,; S. X. Yang,; C. Fan,; J. H. Yang,; W. P. Hu,; Z. M. Wei, et al. Synthesis and transport properties of large-scale alloy Co0.16Mo0.84S2 bilayer nanosheets. ACS Nano 2015, 9, 1257-1262.
Google Scholar
[77]
A. M. Hu,; L. L. Wang,; W. Z. Xiao,; B. Meng, Electronic structures and magnetic properties in Cu-doped two-dimensional dichalcogenides. Phys. E: Low-Dimens. Syst. Nanostruct. 2015, 73, 69-75.
Google Scholar
[78]
W. S. Yun,; J. Lee, Unexpected strong magnetism of Cu doped single-layer MoS2 and its origin. Phys. Chem. Chem. Phys. 2014, 16, 8990-8996.
Google Scholar
[79]
M. G. Li,; J. D. Yao,; X. X. Wu,; S. C. Zhang,; B. R. Xing,; X. Y. Niu,; X. Y. Yan,; Y. Yu,; Y. L. Liu,; Y. W. Wang, P-type doping in large- area monolayer MoS2 by chemical vapor deposition. ACS Appl. Mater. Interfaces 2020, 12, 6276-6282.
Google Scholar
[80]
Y. Y. Jin,; Z. Y. Zeng,; Z. W. Xu,; Y. C. Lin,; K. X. Bi,; G. L. Shao,; T. S. Hu,; S. S. Wang,; S. S. Li,; K. Suenaga, et al. Synthesis and transport properties of degenerate p-type Nb-doped WS2 monolayers. Chem. Mater. 2019, 31, 3534-3541.
Google Scholar
[81]
S. Sasaki,; Y. Kobayashi,; Z. Liu,; K. Suenaga,; Y. Maniwa,; Y. Miyauchi,; Y. Miyata, Growth and optical properties of Nb-doped WS2 monolayers. Appl. Phys. Express 2016, 9, 071201.
Google Scholar
[82]
J. Suh,; T. E. Park,; D. Y. Lin,; D. Y. Fu,; J. Park,; H. J. Jung,; Y. B. Chen,; C. Ko,; C. Jang,; Y. H. Sun, et al. Doping against the native propensity of MoS2: Degenerate hole doping by cation substitution. Nano Lett. 2014, 14, 6976-6982.
Google Scholar
[83]
Z. Y. Qin,; L. Loh,; J. Y. Wang,; X. M. Xu,; Q. Zhang,; B. Haas,; C. Alvarez,; H. Okuno,; J. Z. Yong,; T. Schultz, et al. Growth of Nb- doped monolayer WS2 by liquid-phase precursor mixing. ACS Nano 2019, 13, 10768-10775.
Google Scholar
[84]
S. S. Li,; Y. C. Lin,; W. Zhao,; J. Wu,; Z. Wang,; Z. H. Hu,; Y. D. Shen,; D. M. Tang,; J. Y. Wang,; Q. Zhang, et al. Vapour-liquid-solid growth of monolayer MoS2 nanoribbons. Nat. Mater. 2018, 17, 535-542.
Google Scholar
[85]
F. Zhang,; B. Y. Zheng,; A. Sebastian,; H. Olson,; M. Z. Liu,; K. Fujisawa,; Y. T. H. Pham,; V. O. Jimenez,; V. Kalappattil,; L. X. Miao, et al. Monolayer vanadium-doped tungsten disulfide: A room- temperature dilute magnetic semiconductor. 2020, arXiv:2005.01965. arXiv.org e-Print archive. https://arxiv.org/abs/2005.01965 (accessed May 5, 2020).
[86]
S. J. Yun,; D. L. Duong,; D. M. Ha,; K. Singh,; T. L. Phan,; W. Choi,; Y. M. Kim,; Y. H. Lee, Ferromagnetic order at room temperature in monolayer WSe2 semiconductor via vanadium dopant. Adv. Sci. 2020, 7, 1903076.
Google Scholar
[87]
P. Mallet,; F. Chiapello,; H. Okuno,; H. Boukari,; M. Jamet,; J. Y. Veuillen, Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe2. Phys. Rev. Lett. 2020, 125, 036802.
Google Scholar
[88]
C. K. Shu,; W. H. Lee,; Y. C. Pan,; C. C. Chen,; H. C. Lin,; J. Ou,; W. H. Chen,; W. K. Chen,; M. C. Lee, Optical and electrical investigations of isoelectronic In-doped GaN films. Solid State Commun. 2000, 114, 291-293.
Google Scholar
[89]
M. K. Lee,; T. H. Chiu,; A. Dayem,; E. Agyekum, Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy. Appl. Phys. Lett. 1988, 53, 2653-2655.
Google Scholar
[90]
W. Walukiewicz, Dislocation density reduction by isoelectronic impurities in semiconductors. Appl. Phys. Lett. 1989, 54, 2009-2011.
Google Scholar
[91]
Y. Y. Ma,; B. B. Tang,; W. T. Lian,; C. Y. Wu,; X. M. Wang,; H. X. Ju,; C. F. Zhu,; F. J. Fan,; T. Chen, Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells. J. Mater. Chem. A 2020, 8, 6510-6516.
Google Scholar
[92]
P. K. Bhattacharya,; S. Dhar,; P. Berger,; F. Y. Juang, Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping. Appl. Phys. Lett. 1986, 49, 470-472.
Google Scholar
[93]
X. F. Li,; A. A. Puretzky,; X. H. Sang,; S. KC,; M. K. Tian,; F. Ceballos,; M. Mahjouri-Samani,; K. Wang,; R. R. Unocic,; H. Zhao, et al. Suppression of defects and deep levels using isoelectronic tungsten substitution in monolayer MoSe2. Adv. Funct. Mater. 2017, 27, 1603850.
Google Scholar
[94]
B. Huang,; M. Yoon,; B. G. Sumpter,; S. H. Wei,; F. Liu, Alloy engineering of defect properties in semiconductors: Suppression of deep levels in transition-metal dichalcogenides. Phys. Rev. Lett. 2015, 115, 126806.
Google Scholar
[95]
X. F. Li,; M. W. Lin,; L. Basile,; S. M. Hus,; A. A. Puretzky,; J. Lee,; Y. C. Kuo,; L. Y. Chang,; K. Wang,; J. C. Idrobo, et al. Isoelectronic tungsten doping in monolayer MoSe2 for carrier type modulation. Adv. Mater. 2016, 28, 8240-8247.
Google Scholar
[96]
H. Cai,; B. Chen,; M. Blei,; S. L. Y. Chang,; K. D. Wu,; H. L. Zhuang,; S. Tongay, Abnormal band bowing effects in phase instability crossover region of GaSe1-xTex nanomaterials. Nat. Commun. 2018, 9, 1927.
Google Scholar
[97]
J. Ma,; S. H. Wei, Bowing of the defect formation energy in semiconductor alloys. Phys. Rev. B 2013, 87, 241201.
Google Scholar
[98]
S. H. Wei,; S. B. Zhang,; A. Zunger, First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys. J. Appl. Phys. 2000, 87, 1304-1311.
Google Scholar
[99]
J. G. Song,; G. H. Ryu,; S. J. Lee,; S. Sim,; C. W. Lee,; T. Choi,; H. Jung,; Y. Kim,; Z. Lee,; J. M. Myoung, et al. Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer. Nat. Commun. 2015, 6, 7817.
Google Scholar
[100]
A. Azizi,; Y. Wang,; G. Stone,; A. L. Elias,; Z. Lin,; M. Terrones,; V. H. Crespi,; N. Alem, Defect coupling and sub-angstrom structural distortions in W1-xMoxS2 monolayers. Nano Lett. 2017, 17, 2802-2808.
Google Scholar
[101]
J. Karthikeyan,; H. P. Komsa,; M. Batzill,; A. V. Krasheninnikov, Which transition metal atoms can be embedded into two-dimensional molybdenum dichalcogenides and add magnetism? Nano Lett. 2019, 19, 4581-4587.
Google Scholar
[102]
D. J. Lewis,; A. A. Tedstone,; X. L. Zhong,; E. A. Lewis,; A. Rooney,; N. Savjani,; J. R. Brent,; S. J. Haigh,; M. G. Burke,; C. A. Muryn, et al. Thin films of molybdenum disulfide doped with chromium by aerosol-assisted chemical vapor deposition (AACVD). Chem. Mater. 2015, 27, 1367-1374.
Google Scholar
[103]
F. Jellinek, The structures of the chromium sulphides. Acta Cryst. 1957, 10, 620-628.
Google Scholar
[104]
A. A. Tedstone,; D. J. Lewis,; P. O’Brien, Synthesis, properties, and applications of transition metal-doped layered transition metal dichalcogenides. Chem. Mater. 2016, 28, 1965-1974.
Google Scholar
[105]
X. M. Liu,; X. Zhao,; X. Ma,; N. H. Wu,; Q. Q. Xin,; T. X. Wang, Effect of strain on electronic and magnetic properties of n-type Cr-doped WSe2 monolayer. Phys. E: Low-Dimens. Syst. Nanostruct. 2017, 87, 6-9.
Google Scholar
[106]
A. Azcatl,; X. Y. Qin,; A. Prakash,; C. X. Zhang,; L. X. Cheng,; Q. X. Wang,; N. Lu,; M. J. Kim,; J. Kim,; K. Cho, et al. Covalent nitrogen doping and compressive strain in MoS2 by remote N2 plasma exposure. Nano Lett. 2016, 16, 5437-5443.
Google Scholar
[107]
A. Nipane,; D. Karmakar,; N. Kaushik,; S. Karande,; S. Lodha, Few- layer MoS2 p-type devices enabled by selective doping using low energy phosphorus implantation. ACS Nano 2016, 10, 2128-2137.
Google Scholar
[108]
L. M. Yang,; K. Majumdar,; H. Liu,; Y. C. Du,; H. Wu,; M. Hatzistergos,; P. Y. Hung,; R. Tieckelmann,; W. Tsai,; C. Hobbs, et al. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Nano Lett. 2014, 14, 6275-6280.
Google Scholar
[109]
S. Y. Li,; X. Q. Chen,; F. M. Liu,; Y. F. Chen,; B. Y. Liu,; W. J. Deng,; B. X. An,; F. H. Chu,; G. Q. Zhang,; S. L. Li, et al. Enhanced performance of a CVD MoS2 photodetector by chemical in situ n-type doping. ACS Appl. Mater. Interfaces 2019, 11, 11636-11644.
Google Scholar
[110]
Y. J. Gong,; Z. Liu,; A. R. Lupini,; G. Shi,; J. H. Lin,; S. Najmaei,; Z. Lin,; A. L. Elías,; A. Berkdemir,; G. You, et al. Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Lett. 2014, 14, 442-449.
Google Scholar
[111]
B. Y. Zheng,; C. Ma,; D. Li,; J. Y. Lan,; Z. Zhang,; X. X. Sun,; W. H. Zheng,; T. F. Yang,; C. G. Zhu,; G. Ouyang, et al. Band alignment engineering in two-dimensional lateral heterostructures. J. Am. Chem. Soc. 2018, 140, 11193-11197.
Google Scholar
[112]
P. L. Li,; J. Cui,; J. D. Zhou,; D. Guo,; Z. Z. Zhao,; J. Yi,; J. Fan,; Z. Q. Ji,; X. N. Jing,; F. M. Qu, et al. Phase transition and superconductivity enhancement in Se-substituted MoTe2 thin films. Adv. Mater. 2019, 31, 1904641.
Google Scholar
[113]
J. Pető,; T. Ollár,; P. Vancsó,; Z. I. Popov,; G. Z. Magda,; G. Dobrik,; C. Hwang,; P. B. Sorokin,; L. Tapasztó, Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions. Nat. Chem. 2018, 10, 1246-1251.
Google Scholar
[114]
Q. Cao,; Y. W. Dai,; J. Xu,; L. Chen,; H. Zhu,; Q. Q. Sun,; D. W. Zhang, Realizing stable p-type transporting in two-dimensional WS2 films. ACS Appl. Mater. Interfaces 2017, 9, 18215-18221.
Google Scholar
[115]
Q. Yang,; Z. G. Wang,; L. C. Dong,; W. B. Zhao,; Y. Jin,; L. Fang,; B. S. Hu,; M. D. Dong, Activating MoS2 with super-high nitrogen- doping concentration as efficient catalyst for hydrogen evolution reaction. J. Phys. Chem. C 2019, 123, 10917-10925.
Google Scholar
[116]
L. E. Conroy,; K. C. Park, Electrical properties of the group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide. Inorg. Chem. 1968, 7, 459-463.
Google Scholar
[117]
Z. P. Jin,; Z. Cai,; X. S. Chen,; D. C. Wei, Abnormal n-type doping effect in nitrogen-doped tungsten diselenide prepared by moderate ammonia plasma treatment. Nano Res. 2018, 11, 4923-4930.
Google Scholar
[118]
S. Qin,; W. W. Lei,; D. Liu,; Y. Chen, In-situ and tunable nitrogen- doping of MoS2 nanosheets. Sci. Rep. 2014, 4, 7582.
Google Scholar
[119]
A. Khosravi,; R. Addou,; C. M. Smyth,; R. Y. Yue,; C. R. Cormier,; J. Kim,; C. L. Hinkle,; R. M. Wallace, Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2. APL Mater. 2018, 6, 026603.
Google Scholar
[120]
H. L. Li,; X. D. Duan,; X. P. Wu,; X. J. Zhuang,; H. Zhou,; Q. L. Zhang,; X. L. Zhu,; W. Hu,; P. Y. Ren,; P. F. Guo, et al. Growth of alloy MoS2xSe2(1-x) nanosheets with fully tunable chemical compositions and optical properties. J. Am. Chem. Soc. 2014, 136, 3756-3759.
Google Scholar
[121]
X. D. Duan,; C. Wang,; Z. Fan,; G. L. Hao,; L. Z. Kou,; U. Halim,; H. L. Li,; X. P. Wu,; Y. C. Wang,; J. H. Jiang, et al. Synthesis of WS2xSe2-2x alloy nanosheets with composition-tunable electronic properties. Nano Lett. 2016, 16, 264-269.
Google Scholar
[122]
I. A. Verzhbitskiy,; D. Voiry,; M. Chhowalla,; G. Eda, Disorder- driven two-dimensional quantum phase transitions in LixMoS2. 2D Mater. 2020, 7, 035013.
Google Scholar
[123]
S. Barja,; S. Refaely-Abramson,; B. Schuler,; D. Y. Qiu,; A. Pulkin,; S. Wickenburg,; H. Ryu,; M. M. Ugeda,; C. Kastl,; C. Chen, et al. Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides. Nat. Commun. 2019, 10, 3382.
Google Scholar
[124]
W. T. Su,; L. Jin,; X. D. Qu,; D. X. Huo,; L. Yang, Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS2. Phys. Chem. Chem. Phys. 2016, 18, 14001-14006.
Google Scholar
[125]
H. B. Shu,; Y. H. Li,; X. H. Niu,; J. L. Wang, Greatly enhanced optical absorption of a defective MoS2 monolayer through oxygen passivation. ACS Appl. Mater. Interfaces 2016, 8, 13150-13156.
Google Scholar
[126]
H. P. Komsa,; J. Kotakoski,; S. Kurasch,; O. Lehtinen,; U. Kaiser,; A. V. Krasheninnikov, Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping. Phys. Rev. Lett. 2012, 109, 035503.
Google Scholar
[127]
S. KC,; R. C. Longo,; R. M. Wallace,; K. Cho, Surface oxidation energetics and kinetics on MoS2 monolayer. J. Appl. Phys. 2015, 117, 135301.
Google Scholar
[128]
M. V. Bollinger,; J. V. Lauritsen,; K. W. Jacobsen,; J. K. Nørskov,; S. Helveg,; F. Besenbacher, One-dimensional metallic edge states in MoS2. Phys. Rev. Lett. 2001, 87, 196803.
Google Scholar
[129]
Z. L. Hu,; J. Avila,; X. Y. Wang,; J. F. Leong,; Q. Zhang,; Y. P. Liu,; M. C. Asensio,; J. P. Lu,; A. Carvalho,; C. H. Sow, et al. The role of oxygen atoms on excitons at the edges of monolayer WS2. Nano Lett. 2019, 19, 4641-4650.
Google Scholar
[130]
M. R. Islam,; N. Kang,; U. Bhanu,; H. P. Paudel,; M. Erementchouk,; L. Tetard,; M. N. Leuenberger,; S. I. Khondaker, Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma. Nanoscale 2014, 6, 10033-10039.
Google Scholar
[131]
N. Kang,; H. P. Paudel,; M. N. Leuenberger,; L. Tetard,; S. I. Khondaker, Photoluminescence quenching in single-layer MoS2 via oxygen plasma treatment. J. Phys. Chem. C 2014, 118, 21258-21263.
Google Scholar
[132]
S. Kim,; M. S. Choi,; D. S. Qu,; C. H. Ra,; X. C. Liu,; M. Kim,; Y. J. Song,; W. J. Yoo, Effects of plasma treatment on surface properties of ultrathin layered MoS2. 2D Mater. 2016, 3, 035002.
Google Scholar
[133]
X. Z. Tian,; D. S. Kim,; S. Z. Yang,; C. J. Ciccarino,; Y. J. Gong,; Y. Yang,; Y. Yang,; B. Duschatko,; Y. K. Yuan,; P. M. Ajayan, et al. Correlating the three-dimensional atomic defects and electronic properties of two-dimensional transition metal dichalcogenides. Nat. Mater. 2020, 19, 867-873.
Google Scholar
[134]
M. Bosman,; V. J. Keast,; J. L. García-Muñoz,; A. J. D’Alfonso,; S. D. Findlay,; L. J. Allen, Two-dimensional mapping of chemical information at atomic resolution. Phys. Rev. Lett. 2007, 99, 086102.
Google Scholar
[135]
K. Suenaga,; M. Koshino, Atom-by-atom spectroscopy at graphene edge. Nature 2010, 468, 1088-1090.
Google Scholar
[136]
J. Zribi,; L. Khalil,; B. Y. Zheng,; J. Avila,; D. Pierucci,; T. Brulé,; J. Chaste,; E. Lhuillier,; M. C. Asensio,; A. L. Pan, et al. Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structure. npj 2D Mater. Appl. 2019, 3, 27.
Google Scholar
[137]
E. Ponomarev,; Á. Pásztor,; A. Waelchli,; A. Scarfato,; N. Ubrig,; C. Renner,; A. F. Morpurgo, Hole transport in exfoliated monolayer MoS2. ACS Nano 2018, 12, 2669-2676.
Google Scholar
[138]
T. P. Darlington,; C. Carmesin,; M. Florian,; E. Yanev,; O. Ajayi,; J. Ardelean,; D. A. Rhodes,; A. Ghiotto,; A. Krayev,; K. Watanabe, et al. Imaging strain-localized excitons in nanoscale bubbles of monolayer WSe2 at room temperature. Nat. Nanotechnol., in press, .
Crossref Google Scholar
[139]
B. Schuler,; K. A. Cochrane,; C. Kastl,; E. Barnard,; E. Wong,; N. Borys,; A. M. Schwartzberg,; D. F. Ogletree,; F. J. G. de Abajo,; A. Weber- Bargioni, Electrically driven photon emission from individual atomic defects in monolayer WS2. 2019, arXiv:1910.04612. arXiv.org e-Print archive. https://arxiv.org/abs/1910.04612 (accessed Oct 10, 2019).
[140]
P. Patoka,; G. Ulrich,; A. E. Nguyen,; L. Bartels,; P. A. Dowben,; V. Turkowski,; T. S. Rahman,; P. Hermann,; B. Kästner,; A. Hoehl, et al. Nanoscale plasmonic phenomena in CVD-grown MoS2 monolayer revealed by ultra-broadband synchrotron radiation based nano-FTIR spectroscopy and near-field microscopy. Opt. Express 2016, 24, 1154-1164.
Google Scholar
[141]
P. G. Spizzirri,; J. H. Fang,; S. Rubanov,; E. Gauja,; S. Prawer, Nano-Raman spectroscopy of silicon surfaces. 2010, arXiv:1002.2692. arXiv.org e-Print archive. https://arxiv.org/abs/1002.2692 (accessed Feb 13, 2010).
[142]
D. Edelberg,; D. Rhodes,; A. Kerelsky,; B. Kim,; J. Wang,; A. Zangiabadi,; C. Kim,; A. Abhinandan,; J. Ardelean,; M. Scully, et al. Approaching the intrinsic limit in transition metal diselenides via point defect control. Nano Lett. 2019, 19, 4371-4379.
Google Scholar
[143]
S. Shree,; A. George,; T. Lehnert,; C. Neumann,; M. Benelajla,; C. Robert,; X. Marie,; K. Watanabe,; T. Taniguchi,; U. Kaiser, et al. High optical quality of MoS2 monolayers grown by chemical vapor deposition. 2D Mater. 2019, 7, 015011.
Google Scholar
[144]
S. Strauf,; P. Michler,; M. Klude,; D. Hommel,; G. Bacher,; A. Forchel, Quantum optical studies on individual acceptor bound excitons in a semiconductor. Phys. Rev. Lett. 2002, 89, 177403.
Google Scholar
[145]
Y. J. Zheng,; Y. F. Chen,; Y. L. Huang,; P. K. Gogoi,; M. Y. Li,; L. J. Li,; P. E. Trevisanutto,; Q. X. Wang,; S. J. Pennycook,; A. T. S. Wee, et al. Point defects and localized excitons in 2D WSe2. ACS Nano 2019, 13, 6050-6059.
Google Scholar
[146]
T. Kita,; O. Wada, Bound exciton states of isoelectronic centers in GaAs: N grown by an atomically controlled doping technique. Phys. Rev. B 2006, 74, 035213.
Google Scholar
[147]
S. Gupta,; J. H. Yang,; B. I. Yakobson, Two-level quantum systems in two-dimensional materials for single photon emission. Nano Lett. 2018, 19, 408-414.
Google Scholar
[148]
Q. Zhang,; Z. M. Ren,; N. Wu,; W. J. Wang,; Y. J. Gao,; Q. Q. Zhang,; J. Shi,; L. Zhuang,; X. N. Sun,; L. Fu, Nitrogen-doping induces tunable magnetism in ReS2. npj 2D Mater. Appl. 2018, 2, 22.
Google Scholar
[149]
B. Li,; T. Xing,; M. Z. Zhong,; L. Huang,; N. Lei,; J. Zhang,; J. B. Li,; Z. M. Wei, A two-dimensional Fe-doped SnS2 magnetic semiconductor. Nat. Commun. 2017, 8, 1958.
Google Scholar
[150]
N. Singh,; U. Schwingenschlögl, Extended moment formation in monolayer WS2 doped with 3d transition-metals. ACS Appl. Mater. Interfaces 2016, 8, 23886-23890.
Google Scholar
[151]
A. Ramasubramaniam,; D. Naveh, Mn-doped monolayer MoS2: An atomically thin dilute magnetic semiconductor. Phys. Rev. B 2013, 87, 195201.
Google Scholar
[152]
X. Zhao,; C. X. Xia,; X. Q. Dai,; T. X. Wang,; P. Chen,; L. Tian, Electronic and magnetic properties of X-doped (X = Ni, Pd, Pt) WS2 monolayer. J. Magn. Magn. Mater. 2016, 414, 45-48.
Google Scholar
[153]
Y. Q. Gao,; N. Ganguli,; P. J. Kelly, Itinerant ferromagnetism in p-doped monolayers of MoS2. Phys. Rev. B 2019, 99, 220406.
Google Scholar
[154]
Z. X. Wang,; X. X. Zhao,; Y. K. Yang,; L. Qiao,; L. Lv,; Z. Chen,; Z. F. Di,; W. Ren,; S. J. Pennycook,; J. D. Zhou, et al. Phase-controlled synthesis of monolayer W1-xRexS2 alloy with improved photoresponse performance. Small 2020, 16, 2000852.
Google Scholar
[155]
S. K. Pandey,; H. Alsalman,; J. G. Azadani,; N. Izquierdo,; T. Low,; S. A. Campbell, Controlled p-type substitutional doping in large- area monolayer WSe2 crystals grown by chemical vapor deposition. Nanoscale 2018, 10, 21374-21385.
Google Scholar
Nano Research
Volume 14 Issue 6,
June 2021
Pages 1668-1681
DOI: 10.1007/s12274-20-3013-4
Cite this article:
Loh L, Zhang Z, Bosman M, et al. Substitutional doping in 2D transition metal dichalcogenides. Nano Research, 2021, 14(6): 1668-1681. https://doi.org/10.1007/s12274-20-3013-4
Topics:
SiliconVI semiconductors
Part of a topical collection:
NR45 Awards in 2D Materials, 2021

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Received: 02 June 2020
Revised: 19 July 2020
Accepted: 27 July 2020
Published: 20 August 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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