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Research Article | Open Access

Thermoelectric performance enhancement of (BiS)1.2(TiS2)2 misfit layer sulfide by chromium doping

Yulia Eka PUTRIa, Chunlei WANa,b, Ruizhi ZHANGc, Takao MORId, Kunihito KOUMOTO*,a,b( )
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
CREST, Japan Science and Technology Agency, Tokyo 102-0075, Japan
Department of Physics, State Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base), Northwest University, Xi’an 710069, China
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
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Abstract

A misfit layer sulfide (BiS)1.2(TiS2)2 with a natural superlattice structure has been shown to be a promising thermoelectric material, but its high carrier concentration should be reduced so as to further optimize the thermoelectric performance. However, ordinary acceptor doping has not succeeded because of the non-parabolic band structure. In this paper, we have successfully doped chromium ions into the Ti sites, which can maintain or even enhance the high effective mass of electrons so as to effectively improve ZT value. X-ray diffraction analysis, coupled with X-ray photoelectron spectroscopy, shows that chromium has been substituted into titanium sites in TiS2 layers and confirms its ionic state. The chromium doping has successfully reduced the carrier concentration with the subsequent reduction of electrical conductivity. Unlike other acceptor dopants (alkaline earth metals), chromium also enhances Seebeck coefficient and the effective mass, which can possibly be attributed to the formation of additional resonant states near Fermi level. Though the power factor does not improve, the significant reduction in the electronic part of the thermal conductivity leads to a measurable improvement in ZT.

Keywords

thermoelectricmisfit layer sulfidespark plasma sinteringelectrical conductivitythermal conductivity

References

[1]
Pei YZ, Shi XY, LaLonde A, et al. Convergence of electronic bands for high performance bulk thermoelectrics. Nature 2001, 473: 66–69.
Crossref Google Scholar
[2]
Snyder GJ, Toberer ES. Complex thermoelectric materials. Nat Mater 2008, 7: 105–114.
Crossref Google Scholar
[3]
Hicks LD, Dresselhaus MS. Effect of quantum-well structures on the thermoelectric figure of merit. Phys Rev B 1993, 47: 12727–12731.
Crossref Google Scholar
[4]
Imai H, Shimakawa Y, Kubo Y. Large thermoelectric power factor in TiS2 crystal with nearly stoichiometric composition. Phys Rev B 2001, 64: 241104-1–241104-4.
Crossref Google Scholar
[5]
Slack GA. New materials and performance limits for thermoelectric cooling. In CRC Handbook of Thermoelectric. Rowe DM, Ed. Boca Raton, FL, USA: CRC Press, 1995: 407–440.
[6]
Chen CH, Fabian W, Brown FC, et al. Angle-resolved photoemission studies of the band structure of TiSe2 and TiS2. Phys Rev B 1980, 21: 615–624.10.1103/PhysRevB.21.615
Crossref Google Scholar
[7]
Wilson JA. Modelling the contrasting semimetallic characters of TiS2 and TiSe2. Phys Status Solidi b 1978, 86: 11–36.
Crossref Google Scholar
[8]
Guilmeau E, Bréard Y, Maignan A. Transport and thermoelectric properties in copper intercalated TiS2 chalcogenide. Appl Phys Lett 2011, 99: 052107.
Crossref Google Scholar
[9]
Wan CL, Wang YF, Wang N, et al. Low-thermal-conductivity (MS)1+x(TiS2)2 (M = Pb, Bi, Sn) misfit layer compounds for bulk thermoelectric materials. Materials 2010, 3: 2606–2617.10.3390/ma3042606
Crossref Google Scholar
[10]
Wan CL, Wang YF, Wang N, et al. Layer-structured metal sulfides as novel thermoelectric materials. In Modules, Systems and Applications in Thermoelectrics. Rowe DM, Ed. Boca Raton, FL, USA: CRC Press, 2012: 4.1–4.11.
[11]
Putri YE, Wan CL, Wang YF, et al. Effects of alkaline earth doping on the thermoelectric properties of misfit layer sulfides. Scripta Mater 2012, 66: 895–898.
Crossref Google Scholar
[12]
Ünveren E, Kemnitz E, Hutton S, et al. Analysis of highly resolved X-ray photoelectron Cr 2p spectra obtained with a Cr2O3 powder sample prepared with adhesive tape. Surf Interface Anal 2004, 36: 92–95.
Crossref Google Scholar
[13]
Biesinger MC, Brown C, Mycroft JR, et al. X-ray photoelectron spectroscopy studies of chromium compounds. Surf Interface Anal 2004, 36: 1550–1563.
Crossref Google Scholar
[14]
Zhang J, Qin XY, Xin HX, et al. Thermoelectric properties of Co-doped TiS2. J Electron Mater 2011, 40: 980–986.
Crossref Google Scholar
[15]
Dingle R, Störmer HL, Gossard AC, et al. Electron mobilities in modulation-doped semiconductor heterojunction superlattices. Appl Phys Lett 1978, 33: 665–667.
Crossref Google Scholar
[16]
Seto JYW. The electrical properties of polycrystalline silicon films. J Appl Phys 1975, 46: 5247–5254.
Crossref Google Scholar
[17]
Sze SM. Semi Conductor Devices. 2nd edn. USA: Wiley, 2001.
[18]
Wiegers GA. Charge transfer between layers in misfit layer compounds. J Alloys Compd 1995, 219: 152–156.
Crossref Google Scholar
[19]
Debye PP, Conwell EM. Electrical properties of N-type germanium. Phys Rev 1954, 93: 693–706.10.1103/PhysRev.93.693
Crossref Google Scholar
[20]
Tichý L, Frumar M, Kincl M, et al. Mixed scattering mechanism of free current carriers in SnBi4Te7 single crystals. Phys Status Solidi a 1981,64: 461–466.10.1002/pssa.2210640207
Crossref Google Scholar
[21]
Flage-Larsen E, Prytz Ø. The Lorenz function: Its properties at optimum thermoelectric figure-of-merit. Appl Phys Lett 2011, 99: 202108.
Crossref Google Scholar
[22]
Sofo JO, Mahan GD. Electronic structure of CoSb3: A narrow-band-gap semiconductor. Phys Rev B 1998, 58: 15620–15623.
Crossref Google Scholar
[23]
Wu J, Walukiewicz W, Shan W, et al. Effects of the narrow band gap on the properties of InN. Phys Rev B 2002, 66: 201403-1–201403-4.
Crossref Google Scholar
[24]
Zhang J, Qin XY, Li D, et al. The transport and thermoelectric properties of Cd doped compounds (CdxTi1−x)1+yS2. J Alloys Compd 2009, 479: 816–820.
Crossref Google Scholar
[25]
Minnich AJ, Dresselhaus MS, Ren ZF, et al. Bulk nanostructured thermoelectric materials: Current research and future prospects. Energy Environ Sci 2009, 2: 466–479.
Crossref Google Scholar
[26]
Wan CL, Wang YF, Norimatsu W, et al. Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides. Appl Phys Lett 2012, 100: 101913-1–101913-4.
Crossref Google Scholar
[27]
Cahill DG, Watson SK, Pohl RO. Lower limit to the thermal conductivity of disordered crystals. Phys Rev B 1992, 46: 6131–6140.
Crossref Google Scholar
Journal of Advanced Ceramics
Volume 2 Issue 1,
March 2013
Pages 42-48
DOI: 10.1007/s40145-013-0040-6
Cite this article:
PUTRI YE, WAN C, ZHANG R, et al. Thermoelectric performance enhancement of (BiS)1.2(TiS2)2 misfit layer sulfide by chromium doping. Journal of Advanced Ceramics, 2013, 2(1): 42-48. https://doi.org/10.1007/s40145-013-0040-6

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Received: 08 December 2012
Revised: 15 January 2013
Accepted: 16 January 2013
Published: 06 April 2013
© The author(s) 2013

Open Access: This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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