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Research Article | Open Access

Microhardness, microstructure and electrical properties of ZVM ceramics

Abdel-Mageed H. KHAFAGYa, Sanaa M. EL-RABAIEb, Mohamed T. DAWOUDb( ), M. T. ATTIAb
Physics Department, Faculty of Science, Menufiya University, Shebin El-Koom 32511, Egypt
Physics and Engineering Mathematics Department, Faculty of Electronic Engineering, Menufiya University, Menouf 32952, Egypt
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Abstract

The effect of Mn3O4 addition on microhardness, microstructure and electrical properties of vanadium oxide doped zinc oxide varistor ceramics is systematically investigated. The Vicker's microhardness HV has decreased with increasing the amount of Mn3O4. Also, the average grain size has decreased from 27.51 μm to 19.55 μm with increasing the amount of Mn3O4 up to 0.50 mol%, whereas an increase in Mn3O4 up to 0.75 mol% has caused the average grain size to increase and then it decreases with increasing Mn3O4 from 0.75 mol% to 1.00 mol%. The sintered density has decreased from 5.38 g/cm3 to 5.31 g/cm3 with increasing the amount of Mn3O4. The varistor ceramic modified with 0.50 mol% Mn3O4 has exhibited excellent nonlinear properties, with 16.29 for the nonlinear coefficient and 441.9 μA/cm2 for the leakage current density. Furthermore, the sample doped with 0.50 mol% Mn3O4 has been found to possess donor density as 0.77×1018 cm-3 and 0.916 eV barrier height.

Keywords

ceramicselectrical propertiesmicrostructurevaristorMn3O4 doped ZnO–V2O5 varistor

References

[1]
Gupta TK. Application of zinc oxide varistors. J Am Ceram Soc 1990, 73:1817-1840.
Crossref Google Scholar
[2]
Peiteado M, Fernánde JF, Caballero AC. Processing strategies to control grain growth in ZnO based varistors. J Eur Ceram Soc 2005, 25:2999-3003.
Crossref Google Scholar
[3]
Levinson LM, Philipp HR. Zinc oxide varistors—A review. Am Ceram Soc Bull 1986, 65:639-646.
Google Scholar
[4]
Deshpande VV, Patil MM, Ravi V. Low voltage varistors based on CeO2. Ceram Int 2006, 32:85-87.
Crossref Google Scholar
[5]
Pianaro SA, Bueno PR, Longo E, et al. A new SnO2-based varistor system. J Mater Sci Lett 1995, 14:692-694.
Crossref Google Scholar
[6]
Dhage SR, Ravi V, Yang OB. Low voltage varistor ceramics based on SnO2. Bull Mater Sci 2007, 30:583-586.
Crossref Google Scholar
[7]
Sedky A, Al-Sawalha A, Yassin AM. Enhancement of electrical conductivity of ZnO ceramic varistor by Al doping. Egyptian Journal of Solids 2008, 31:205-215.
Google Scholar
[8]
Matsuoka M. Nonohmic properties of zinc oxide ceramics. Jpn J Appl Phys 1971, 10:736.
Crossref Google Scholar
[9]
Glot AB. A model of non-ohmic conduction in ZnO varistors. J Mater Sci: Mater El 2006, 17:755-765.
Crossref Google Scholar
[10]
Inada M. Formation mechanism of nonohmic zinc oxide ceramics. Jpn J Appl Phys 1980, 19:409.
Crossref Google Scholar
[11]
Houabes M, Bernik S, Talhi C, et al. The effects of aluminium oxide on the residual voltage of ZnO varistors. Ceram Int 2005, 31:783-789.
Crossref Google Scholar
[12]
Bernik S, Daneu N. Characteristics of ZnO-based varistor ceramics doped with Al2O3. J Eur Ceram Soc 2007, 27:3161-3170.
Crossref Google Scholar
[13]
Sedky A, El-Suheel E. A comparative study between the effects of magnetic and nonmagnetic dopants on the properties of ZnO varistors. Physics Research International 2010, 2010:120672.
Crossref Google Scholar
[14]
Sedky A, Abu-Abdeen M, Almulhem AA. Nonlinear I–V characteristics in doped ZnO based-ceramic varistor. Physica B 2007, 388:266-273.
Crossref Google Scholar
[15]
Sawalha A, Abu-Abdeen M, Sedky A. Electrical conductivity study in pure and doped ZnO ceramic system. Physica B 2009, 404:1316-1320.
Crossref Google Scholar
[16]
Gupta TK. Microstructural engineering through donor and acceptor doping in the grain and grain boundary of a polycrystalline semiconducting ceramics. J Mater Res 1992, 7:3280-3295.
Crossref Google Scholar
[17]
Nahm CW. Improvement of electrical properties of V2O5 modified ZnO ceramics by Mn-doping for varistor applications. J Mater Sci: Mater El 2008, 19:1023-1029.
Crossref Google Scholar
[18]
Nahm C-W. The nonlinear properties and stability of ZnO–Pr6O11–CoO–Cr2O3–Er2O3 ceramic varistors. Mater Lett 2001, 47:182-187.
Crossref Google Scholar
[19]
Nahm C-W. ZnO–Pr6O11–CoO–Cr2O3–Er2O3-based ceramic varistors with high stability of nonlinear properties. J Mater Sci Lett 2002, 21:201-204.
Google Scholar
[20]
Tsai JK, Wu TB. Non-ohmic characteristics of ZnO–V2O5 ceramics. J Appl Phys 1994, 76:4817.
Crossref Google Scholar
[21]
Tsai J-K, Wu T-B. Microstructure and nonohmic properties of binary ZnO–V2O5 ceramics sintered at 900 ℃. Mater Lett 1996, 26:199-203.
Google Scholar
[22]
Kuo C-T, Chen C-S, Lin I-N. Microstructure and nonlinear properties of microwave-sintered ZnO–V2O5 varistors: I, Effect of V2O5 doping. J Am Ceram Soc 1998, 81:2942-2948.
Google Scholar
[23]
Hng HH, Knowles KM. Characterisation of Zn3(VO4)2 phases in V2O5-doped ZnO varistors. J Eur Ceram Soc 1999, 19:721-726.
Google Scholar
[24]
Hng HH, Halim L. Grain growth in sintered ZnO–1 mol% V2O5 ceramics. Mater Lett 2003, 57:1411-1416.
Google Scholar
[25]
Nahm C-W. Effect of Mn doping on electrical properties and accelerated ageing behaviours of ternary ZVM varistors. Bull Mater Sci 2011, 34:1385-1391.
Google Scholar
[26]
Nahm C-W. Nb2O5 doping effect on electrical properties of ZnO–V2O5–Mn3O4. Ceram Int 2012, 38:5281-5285.
Google Scholar
[27]
Nahm C-W. Non-omic properties and impulse aging behavior of quaternary ZnO–V2O5–Mn3O4–Er2O3 semiconducting varistors with sintering processing. Mat Sci Semicon Proc 2013, 16:1308-1315.
Google Scholar
[28]
Nahm C-W. Characteristics of ZnO–V2O5–MnO-Nb2O5–Er2O3 semiconducting varistors with sintering processing. Mat Sci Semicon Proc 2013, 16:778-785.
Google Scholar
[29]
Nahm C-W. Effect of erbium on varistor characteristics of vanadium oxide-doped zinc oxide ceramics. J Mater Sci: Mater El 2013, 24:27-35.
Google Scholar
[30]
Nahm C-W. Varistor characteristics of vanadmium oxide-doped zinc oxide ceramics modified with bismuth oxide. J Mater Sci: Mater El 2013, 24:70-78.
Google Scholar
[31]
Hng HH, Chan PL. Microstructure and current–voltage characteristics of ZnO–V2O5–MnO2 varistor system. Ceram Int 2004, 30:1647-1653.
Crossref Google Scholar
[32]
Liu H-Y, Kong H, Ma X-M, et al. Microstructure and electrical properties of ZnO-based varistors prepared by high-energy ball milling. J Mater Sci 2007, 42:2637-2642.
Crossref Google Scholar
[33]
Wurst JC, Nelson JA. Lineal intercept technique for measuring grain size in two-phase polycrystalline ceramics. J Am Ceram Soc 1972, 55:109-111.
Crossref Google Scholar
[34]
Senthilkumaar S, Rajendran K, Banerjee S, et al. Influence of Mn doping on the microstructure and optical property of ZnO. Mat Sci Semicon Proc 2008, 11:6-12.
Crossref Google Scholar
[35]
Morris WG. Physical properties of the electrical barriers in varistors. J Vac Sci Technol 1976, 13:926-931.
Crossref Google Scholar
Journal of Advanced Ceramics
Volume 3 Issue 4,
December 2014
Pages 287-296
DOI: 10.1007/s40145-014-0120-2
Cite this article:
KHAFAGY A-MH, EL-RABAIE SM, DAWOUD MT, et al. Microhardness, microstructure and electrical properties of ZVM ceramics. Journal of Advanced Ceramics, 2014, 3(4): 287-296. https://doi.org/10.1007/s40145-014-0120-2

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Received: 28 May 2014
Revised: 26 June 2014
Accepted: 06 July 2014
Published: 30 November 2014
© The author(s) 2014

Open Access: This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited.
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