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Research Article | Open Access

Oxidation mechanism of aluminum nitride revisited

Chun-Ting YEH, Wei-Hsing TUAN( )
Department of Materials Science and Engineering, “National Taiwan University”, Taipei, Taiwan 106, China
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Abstract

Different from the oxidation kinetics of other nitrides, the oxide layer on AlN can easily reach tens of micrometers at a temperature above 1200 ℃. In the present study, the oxidation mechanism of AlN is investigated through microstructure observation. The analysis indicates that the oxide layer is full of small pores. The formation of pores generates additional surface area to induce further reaction. The reaction thus controls the oxidation in the temperature range from 1050 to 1350 ℃. The oxidation rate becomes slow as the oxide layer reaches a critical thickness.

Keywords

oxidation mechanismaluminum nitridediffusionreaction

References

[1]
Yoshimura HN, Narita NE, Molisani AL, et al. High temperature flexural strength and fracture toughness of AlN with Y2O3 ceramic. J Mater Sci 2009, 44: 5773-5780.
Crossref Google Scholar
[2]
Kar JP, Bose G, Tuli S, et al. Morphological investigation of aluminium nitride films on various substrates for MEMS applications. Surf Eng 2009, 25: 526-530.
Crossref Google Scholar
[3]
Yeh C-T, Tuan W-H. Pre-oxidation of AlN substrates for subsequent metallization. J Mater Sci: Mater El 2015, 26: 5910-5916.
Crossref Google Scholar
[4]
Iwase N, Anzai K, Shinozaki K, et al. Thick film and direct bond copper forming technologies for aluminum nitride substrate. IEEE T Compon Hybr 1985, 8: 253-258.
Crossref Google Scholar
[5]
Chiang WL, Greenhut VA, Shanefield DJ, et al. Effect of substrate and pretreatment on copper to AIN direct bonds. In Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, 1991, 12, .
Crossref
[6]
Watanabe Y, Hara Y, Tokuda T, et al. Surface oxidation of alumiuium nitride thin films. Surf Eng 2000, 16: 211-214.
Crossref Google Scholar
[7]
Lavrenko VA, Alexeev AF. Oxidation of sintered aluminium nitride. Ceram Int 1983, 9: 80-82.
Crossref Google Scholar
[8]
Katnani AD, Papathomas KI. Kinetics and initial stages of oxidation of aluminum nitride: Thermogravimetric analysis and X-ray photoelectron spectroscopy study. J Vac Sci Technol A 1987, 5: 1335-1340.
Crossref Google Scholar
[9]
Sato T, Haryu K, Endo T, et al. High temperature oxidation of hot-pressed aluminium nitride by water vapour. J Mater Sci 1987, 22: 2277-2280.
Crossref Google Scholar
[10]
Suryanarayana D. Oxidation kinetics of aluminum nitride. J Am Ceram Soc 1990, 73: 1108-1110.
Crossref Google Scholar
[11]
Bellosi A, Landi E, Tampieri A. Oxidation behavior of aluminum nitride. J Mater Res 1993, 8: 565-572.
Crossref Google Scholar
[12]
Robinson D, Dieckmann R. Oxidation of aluminium nitride substrates. J Mater Sci 1994, 29: 1949-1957.
Crossref Google Scholar
[13]
Osborne EW, Norton MG. Oxidation of aluminium nitride. J Mater Sci 1998, 33: 3859-3865.
Crossref Google Scholar
[14]
Brown AL, Norton MG. Oxidation kinetics of AlN powder. J Mater Sci Lett 1998, 17: 1519-1522.
Crossref Google Scholar
[15]
Tseng WJ, Tsai C-J, Fu S-L. Oxidation, microstructure and metallization of aluminum nitride substrates. J Mater Sci: Mater El 2000, 11: 131-138.
Crossref Google Scholar
[16]
Zhou H, Qiao L, Fu R. Effect of the fluoride additives on the oxidation of AlN. Mater Res Bull 2002, 37: 2427-2435.
Crossref Google Scholar
[17]
Stull DR, Prophet H. JANAF Thermochemical Tables, 2nd edn. National Bureau of Standards US, 1971.
Crossref
[18]
Haggerty JS, Lightfoot A, Ritter JE, et al. Oxidation and fracture strength of high-purity reaction-bonded silicon nitride. J Am Ceram Soc 1989, 72: 1675-1679.
Crossref Google Scholar
[19]
Cannon RM, Rhodes WH, Heuer AH. Plastic deformation of fine-grained alumina (Al2O3): I, interface-controlled diffusional creep. J Am Ceram Soc 1980, 63: 46-53.
Crossref Google Scholar
[20]
Nakagawa T, Nishimura H, Sakaguchi I, et al. Grain boundary character dependence of oxygen grain boundary diffusion in α-Al2O3 bicrystals. Scripta Mater 2011, 65: 544-547.
Crossref Google Scholar
Journal of Advanced Ceramics
Volume 6 Issue 1,
March 2017
Pages 27-32
DOI: 10.1007/s40145-016-0213-1
Cite this article:
YEH C-T, TUAN W-H. Oxidation mechanism of aluminum nitride revisited. Journal of Advanced Ceramics, 2017, 6(1): 27-32. https://doi.org/10.1007/s40145-016-0213-1

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Received: 08 September 2017
Revised: 10 May 2017
Accepted: 10 May 2018
Published: 02 March 2017
© The author(s) 2016

Open Access The articles published in this journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons. org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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