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Research Article | Open Access

Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping

Chuanshuo ZHANGa, Dongli HUa,b( ), Hui GUa,b, Juanjuan XINGa,b, Ping XIONGa, Dongyun WANa, Yanfeng GAOa
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
Materials Genome Institute, Shanghai University, Shanghai 200444, China
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Abstract

To achieve a better material for uncooled infrared (IR) detector, polycrystalline VO2(B) thin films with layered W-doping were fabricated on Si substrates by magnetron sputtering, and the best temperature coefficient of resistance (TCR) value reached -4.1%/K. The film synthesis was in a two-step route, first deposition at room temperature and then post-deposition annealing at 450 ℃, to better control the crystallization behavior. Various transmission electron microscopy (TEM) methods were employed to investigate three sets of multi-layered films with different deposition time, 10, 20, and 30 min, with especial emphasis on the effect of layered W-doping scheme on the formation of multiple VO2(B) layers. Spatial-resolved energy dispersive X-ray spectroscopy (EDS) revealed the alternative patterns of W-rich layers and W-poor layers, while the thinner films exhibited better crystallinity and texturing. By comparison with an as-deposited film, it was found that the inter-diffusion between the two types of layers was completed in the deposition step while both remained in amorphous structure. A stable W solution of about 8 cat% in VO2(B) layers measured from all these films indicated that the layered doping can tailor the multi-layered microstructure to optimize the performance of VO2(B) films.

Keywords

VO2(B) thin filmlayered W-dopingcrystallizationtransmission electron microscopy (TEM)solid-solution

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Journal of Advanced Ceramics
Volume 6 Issue 3,
September 2017
Pages 196-206
DOI: 10.1007/s40145-017-0231-7
Cite this article:
ZHANG C, HU D, GU H, et al. Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping. Journal of Advanced Ceramics, 2017, 6(3): 196-206. https://doi.org/10.1007/s40145-017-0231-7

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Received: 25 February 2017
Revised: 19 April 2017
Accepted: 13 May 2017
Published: 29 September 2017
© The author(s) 2017

Open Access The articles published in this journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons. org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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