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Research Article | Open Access

Effect of processing parameters on in situ screen printing-assisted synthesis and electrical properties of Ti3SiC2-based structures

Mylena LORENZa, Nahum TRAVITZKYa,b, Carlos R. RAMBOc()
Department of Materials Science, University of Erlangen-Nuremberg, 91058 Erlangen, Germany
Tomsk Polytechnic University, 634050 Tomsk, Russia
Department of Electrical and Electronic Engineering, Federal University of Santa Catarina, 88040-900 Florianopolis, Brazil
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Abstract

This work reports on the development of pastes containing Ti, TiC, Si, and C elementary powders for in situ synthesis of Ti3SiC2 via screen printing. Four paste compositions were manufactured using two powder mixtures (Ti/Si/C and Ti/TiC/Si/C) with different stoichiometry. The pastes were screen printed onto Al2O3 substrates and sintered at 1400 ℃ in argon varying the dwell time from 1 to 5 h. The printed pastes containing TiC and excess of Si exhibited the lowest surface roughness and after 5 h sintering comprised of Ti3SiC2 as the majority phase. The electrical conductivity of this sample was found to range from 4.63×104 to 2.57×105 S·m-1 in a temperature range of 25-400 ℃.

Keywords

MAX phasesTi3SiC2screen printingin situ synthesiselectrical conductivity

References

[1]
MW Barsoum, T El-Raghy. Synthesis and characterization of a remarkable ceramic: Ti3SiC2. J Am Ceram Soc 1996, 79: 1953-1956.
Crossref Google Scholar
[2]
T El-Raghy, MW Barsoum. Diffusion kinetics of the carburization and silicidation of Ti3SiC2. J Appl Phys 1998, 83: 112-119.
Crossref Google Scholar
[3]
T El-Raghy, MW Barsoum. Processing and mechanical properties of Ti3SiC2: I, reaction path and microstructure evolution. J Am Ceram Soc 1999, 82: 2849-2854.
Crossref Google Scholar
[4]
J Emmerlich, D Music, P Eklund, et al. Thermal stability of Ti3SiC2 thin films. Acta Mater 2007, 55: 1479-1488.
Crossref Google Scholar
[5]
ZM Sun, YC Zhou. Fluctuation synthesis and characterization of Ti3SiC2 powders. Mater Res Innov 1999, 2: 227-231.
Crossref Google Scholar
[6]
Y Zhou, Z Sun. Temperature fluctuation/hot pressing synthesis of Ti3SiC2. J Mater Sci 2000, 35: 4343-4346.
Crossref Google Scholar
[7]
NF Gao, Y Miyamoto, D Zhang. Dense Ti3SiC2 prepared by reactive HIP. J Mater Sci 1999, 34: 4385-4392.
Crossref Google Scholar
[8]
N Gao, J Li, D Zhang, et al. Rapid synthesis of dense Ti3SiC2 by spark plasma sintering. J Eur Ceram Soc 2002, 22: 2365-2370.
Crossref Google Scholar
[9]
MMM Carrijo, LG Caro, H Lorenz, et al. Ti3SiC2-based inks for direct ink-jet printing technology. Ceram Int 2017, 43: 820-824.
Crossref Google Scholar
[10]
J Schultheiß, B Dermeik, I Filbert-Demut, et al. Processing and characterization of paper-derived Ti3SiC2 based ceramic. Ceram Int 2015, 41: 12595-12603.
Crossref Google Scholar
[11]
J Emmerlich, H Högberg, S Sasvári, et al. Growth of Ti3SiC2 thin films by elemental target magnetron sputtering. J Appl Phys 2004, 96: 4817-4826.
Crossref Google Scholar
[12]
MMM Carrijo, H Lorenz, I Filbert-Demut, et al. Fabrication of Ti3SiC2-based composites via three-dimensional printing: Influence of processing on the final properties. Ceram Int 2016, 42: 9557-9564.
Crossref Google Scholar
[13]
SB Li, HX Zhai. Synthesis and reaction mechanism of Ti3SiC2 by mechanical alloying of elemental Ti, Si, and C powders. J Am Ceram Soc 2005, 88: 2092-2098.
Crossref Google Scholar
[14]
D Dcosta, W Sun, F Lin, et al. Freeform fabrication of Ti3SiC2 powder-based structures. J Mater Process Technol 2002, 127: 352-360.
Crossref Google Scholar
[15]
R Faddoul, N Reverdy-Bruas, A Blayo. Formulation and screen printing of water based conductive flake silver pastes onto green ceramic tapes for electronic applications. Mat Sci Eng B 2012, 177: 1053-1066.
Crossref Google Scholar
[16]
JW Phair, M Lundberg, A Kaiser. Leveling and thixotropic characteristics of concentrated zirconia inks for screen printing. Rheol Acta 2009, 48: 121-133.
Crossref Google Scholar
[17]
HW Lin, CP Chang, WH Hwu, et al. The rheological behaviors of screen-printing pastes. J Mater Process Technol 2008, 197: 284-291.
Crossref Google Scholar
[18]
HD Goldberg, RB Brown, DP Liu, et al. Screen printing: A technology for the batch fabrication of integrated chemical-sensor arrays. Sensor Actuat B: Chem 1994, 21: 171-183.
Crossref Google Scholar
[19]
JW Phair. Rheological analysis of concentrated zirconia pastes with ethyl cellulose for screen printing SOFC electrolyte films. J Am Ceram Soc 2008, 91: 2130-2137.
Crossref Google Scholar
[20]
MMM Carrijo, H Lorenz, CR Rambo, et al. Fabrication of Ti3SiC2-based pastes for screen printing on paper-derived Al2O3 substrates. Ceram Int 2018, 44: 8116-8124.
Crossref Google Scholar
[21]
QF Zan, CA Wang, Y Huang, et al. The interface-layer and interface in the Al2O3/Ti3SiC2 multilayer composites prepared by in situ synthesis. Mater Lett 2003, 57: 3826-3832.
Crossref Google Scholar
[22]
C Kluthe, B Dermeik, W Kollenberg, et al. Processing, microstructure and properties of paper-derived porous Al2O3 substrates. J Ceram Sci Technol 2012, 3: 111-118.
Google Scholar
[23]
K Inukai, Y Takahashi, K Ri, et al. Rheological analysis of ceramic pastes with ethyl cellulose for screen-printing. Ceram Int 2015, 41: 5959-5966.
Crossref Google Scholar
[24]
A Méndez-Vilas, J Díaz. Modern Research and Educational Topics in Microscopy. Badajoz, Spain: Formatex, 2007.
[25]
DIN EN ISO 4287: 2010-07. Geometrical Product Specifications (GPS) - Surface texture: Profile method - Terms, definitions and surface texture parameters (ISO 4287:1997 + Cor 1:1998 + Cor 2:2005 + Amd 1:2009); German version EN ISO 4287:1998 + AC:2008 + A1:2009. 2010.
[26]
S Murakami, K Ri, T Itoh, et al. Effects of ethyl cellulose polymers on rheological properties of (La,Sr)(Ti,Fe)O3-terpineol pastes for screen printing. Ceram Int 2014, 40: 1661-1666.
Crossref Google Scholar
[27]
M Sedlaček, B Podgornik, J Vižintin. Influence of surface preparation on roughness parameters, friction and wear. Wear 2009, 266: 482-487.
Crossref Google Scholar
[28]
F Sato, JF Li, R Watanabe. Reaction synthesis of Ti3SiC2 from mixture of elemental powders. Mater Trans, JIM 2000, 41: 605-608.
Crossref Google Scholar
[29]
C Racault, F Langlais, R Naslain. Solid-state synthesis and characterization of the ternary phase Ti3SiC2. J Mater Sci 1994, 29: 3384-3392.
Crossref Google Scholar
[30]
S Arunajatesan, AH Carim. Synthesis of titanium silicon carbide. J Am Ceram Soc 1995, 78: 667-672.
Crossref Google Scholar
[31]
V Gauthier, B Cochepin, S Dubois, et al. Self-propagating high-temperature synthesis of Ti3SiC2: Study of the reaction mechanisms by time-resolved X-ray diffraction and infrared thermography. J Am Ceram Soc 2006, 89: 2899-2907.
Crossref Google Scholar
[32]
JY Wu, YC Zhou, JY Wang, et al. Interfacial reaction between Cu and Ti2SnC during processing of Cu-Ti2SnC composite. Zeitschrift Für Met 2005, 96: 1314-1320.
Crossref Google Scholar
[33]
SL Yang, ZM Sun, H Hashimoto. Reaction in Ti3SiC2 powder synthesis from a Ti-Si-TiC powder mixture. J Alloys Compd 2004, 368: 312-317.
Crossref Google Scholar
[34]
H Klemm, K Tanihata, Y Miyamoto. Gas pressure combustion sintering and hot isostatic pressing in the Ti-Si-C system. J Mater Sci 1993, 28: 1557-1562.
Crossref Google Scholar
[35]
HB Zhang, YC Zhou, YW Bao, et al. Intermediate phases in synthesis of Ti3SiC2 and Ti3Si(Al)C2 solid solutions from elemental powders. J Eur Ceram Soc 2006, 26: 2373-2380.
Crossref Google Scholar
[36]
CS Park, F Zheng, S Salamone, et al. Processing of composites in the Ti-Si-C system. J Mater Sci 2001, 36: 3313-3322.
Crossref Google Scholar
[37]
H Lorenz, J Thäter, MM Matias Carrijo, et al. In situ synthesis of paper-derived Ti3SiC2. J Mater Res 2017, 32: 3409-3414.
Crossref Google Scholar
[38]
R Radhakrishnan, J Williams, M Akinc. Synthesis and high-temperature stability of Ti3SiC2. J Alloys Compd 1999, 285: 85-88.
Crossref Google Scholar
[39]
HI Yoo, MW Barsoum, T El-Raghy. Ti3SiC2 has negligible thermopower. Nature 2000, 407: 581-582.
Crossref Google Scholar
[40]
J-P Palmquist, S Li, POÅ Persson, et al. Mn+1AXn phases in the Ti-Si-C system studied by thin-film synthesis and ab initio calculations. Phys Rev B 2004, 70: 165401.
Crossref Google Scholar
[41]
KM Gupta, N Gupta. Advanced Electrical and Electronics Materials. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015.
Crossref
[42]
XH Wang, YC Zhou. Improvement of intermediate-temperature oxidation resistance of Ti3AlC2 by pre-oxidation at high temperatures. Mater Res Innov 2003, 7: 205-211.
Crossref Google Scholar
Journal of Advanced Ceramics
Volume 10 Issue 1,
February 2021
Pages 129-138
DOI: 10.1007/s40145-020-0427-0
Cite this article:
LORENZ M, TRAVITZKY N, RAMBO CR. Effect of processing parameters on in situ screen printing-assisted synthesis and electrical properties of Ti3SiC2-based structures. Journal of Advanced Ceramics, 2021, 10(1): 129-138. https://doi.org/10.1007/s40145-020-0427-0
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10.1007/s40145-020-0427-0.T001Composition of pastes

P1.1P1.2P2.1P2.2
(vol%)(wt%)(vol%)(wt%)(vol%)(wt%)(vol%)(wt%)
Terpineol65.541.667.342.161.133.161.634.5
EC7.219.84.512.13.47.82.97.0
Ti10.526.213.032.09.620.68.418.5
Si7.910.29.712.510.812.014.116.1
Graphite8.92.25.51.34.10.93.50.8
TiC————11.025.79.523.1
Stoich.3Ti/2Si/2C3Ti/2Si/C3Ti/3TiC/3Si/C3Ti/3TiC/4.5Si/C
MixtureTi/Si/CTi/TiC/Si/C

10.1007/s40145-020-0427-0.T002　Ra and Rq values of the green and sintered screen-printed layers during different time at 1400 ℃

PasteGreenSintering time
1 h3 h5 h
Ra (µm)/Rq (µm)Ra (µm)/Rq (µm)Ra (µm)/Rq (µm)Ra (µm)/Rq (µm)
P1.15.7±1.1/6.9±1.19.7±1.1/12.9±1.19.5±2.7/13.2±0.613.0±1.8/16.4±2.7
P1.25.7±0.6/7.2±0.79.8±0.9/11.9±1.110.7±1.3/13.4±1.411.8±1.6/15.3±3.0
P2.16.5±0.5/8.0±0.75.2±0.4/6.5±0.55.1±0.8/6.4±1.06.1±1.0/7.7±1.1
P2.24.7±0.7/6.0±0.95.7±0.6/7.2±0.85.0±0.6/6.2±0.86.3±0.5/8.1±0.8

10.1007/s40145-020-0427-0.T003Electrical conductivity at 25 and 400 ℃ of layers formed from pastes P2.1 and P2.2 after 5 h sintering at 1400 ℃

SampleElectrical conductivity (S·m-1)
25 ℃400 ℃
P2.19.99×104 (±6.90×103)4.63×104 (±9.45×103)
P2.22.57×105 (±1.85×104)7.13×104 (±9.25×104)