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Research Article | Open Access

Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper

Xingliang HE1Yunyun CHEN1,2Huijia ZHAO3Haoming SUN3Xinchun LU3Hong LIANG1,2,*( )
Department of Mechanical Engineering, Texas A&M University, College Station, TX 77843-3123, USA
Materials Science and Engineering, Texas A&M University, College Station, TX 77843-3123, USA
Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China
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Abstract

Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing. Here we report using new yttrium oxide (Y2O3) nanosheets as slurry abrasives for chemical-mechanical planarization (CMP) of copper. Results showed that the global planarization was improved by 30% using a slurry containing Y2O3 nanosheets in comparison with a standard industrial slurry. During CMP, the two-dimensional square shaped Y2O3 nanosheet is believed to induce the low friction, the better rheological performance, and the laminar flow leading to the decrease in the within-wafer-non-uniformity, surface roughness, as well as dishing. The application of the two-dimensional nanosheets as abrasive in CMP would increase the manufacturing yield of integrated circuits.

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References

[1]
Liang H, Craven D. Tribology in Chemical-Mechanical Planarization. Boca Raton (USA): CRC Press, 2005.
[2]
Ein-Eli Y, Starosvetsky D. Review on copper chemical– mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective. Electrochim Acta 52:1825-1838 (2007)
[3]
Zantye P B, Kumar A, Sikder A K. Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R Rep 45:89-220 (2004)
[4]
Joo S, Liang H. Tribo-electrochemical characterization of copper with patterned geometry. Microelectron Eng 98:12-18 (2012)
[5]
Su J, Chen X, Du J, Guo D, Kang R. Analyzing on nonuniformity of material removal in silicon wafer cmp based on abrasive movement trajectories. Adv Mater Res 53-54:119-124 (2008)
[6]
Hocheng H, Tsai H Y, Tsai M S. Effects of kinematic variables on nonuniformity in chemical mechanical planarization. Int J Mach Tool Manu 40:1651-1669 (2000)
[7]
Feng T. Nonuniformity of wafer and pad in CMP: Kinematic aspects of view. IEEE Trans Semicond Manuf 20:451-463 (2007)
[8]
Kim H, Jeong H. Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization. J Electron Mater 33:53-60 (2004)
[9]
Lee H, Park B, Jeong H. Influence of slurry components on uniformity in copper chemical mechanical planarization. Microelectron Eng 85:689-696 (2008)
[10]
Sikder A K, Giglio F, Wood J, Kumar A, Anthony M. Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process. J Electron Mater 30:1520-1526 (2001)
[11]
He X, Joo S, Xiao H, Liang H. Boron-based nanoparticles for chemical-mechanical polishing of copper films. ECS J Solid State Sci Technol 2:P20-P25 (2013)
[12]
Kasai T, Bhushan B. Physics and tribology of chemical mechanical planarization. J Phys: Condens Matter 20:225011 (2008)
[13]
Chemali C E, Moyne J, Khan K, Nadeau R, Smith P, Colt J, Chapple-Sokol J. Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy. J Vac Sci Technol A 18:1287-1296 (2000)
[14]
Tso P, Wang Y, Tsai M. A study of carrier motion on a dual-face CMP machine. J Mater Process Technol 116:194-200 (2001)
[15]
Ward-Smith J. Mechanics of Fluids, 9 Edition. New York (USA): CRC Press, 2011.
[16]
Taylor G. The dispersion of matter in turbulent flow through a pipe. Proc R Soc Lond A 223:446-468 (1954)
[17]
Spalding D B. Mass transfer in laminar flow. Proc R Soc Lond A 221:78-99 (1954)
[18]
Luo J, Dornfeld D A. Material removal mechanism in chemical mechanical polishing: Theory and modeling. IEEE Trans Semicond Manuf 14:112-133 (2001)
[19]
Bozkaya D, Müftü S. A material removal model for cmp based on the contact mechanics of pad, abrasives, and wafer. J Electrochem Soc 156:H890-H902 (2009)
[20]
Runnels S R, Eyman L M. Tribology analysis of chemical- mechanical polishing. J Electrochem Soc 141:1698-1701 (1994)
[21]
Chen J M, Fang Y-C. Hydrodynamic characteristics of the thin fluid film in chemical-mechanical polishing. IEEE Trans Semicond Manuf 15:39-44 (2002)
[22]
Liang H. Chemical boundary lubrication in chemical- mechanical planarization. Trobol Int 38:235-242 (2005)
[23]
Grover G S, Liang H, Ganeshkumar S, Fortino W. Effect of slurry viscosity modification on oxide and tungsten CMP. Wear 214:10-13 (1998)
[24]
Nolan L, Cadien K. Copper CMP: The relationship between polish rate uniformity and lubrication. ECS J Solid State Sci Technol 1:P157-P163 (2012)
[25]
Lin S, Wu M. A study of the effects of polishing parameters on material removal rate and non-uniformity. Int J Mach Tool Manu 42:99-103 (2002)
[26]
Fu G, Chandra A. An analytical dishing and step height reduction model for chemical mechanical planarization (CMP). IEEE Trans Semicond Manuf 16:477-485 (2003)
[27]
Nguyen V H, Daamen R, van Kranenburg H, van der Velden P, Woerlee P H. A physical model for dishing during metal CMP. J Electrochem Soc 150:G689-G693 (2003)
[28]
Vlassak J J. A contact-mechancis based model for dishing and erosion in chemical-mechanical polishing. Mater Res Soc Symp 671:M4.6.1-M4.6.6 (2001)
[29]
Saka N, Lai J Y, Chun J H, Shu N P. Mechanisms of the chemical mechanical polishing (CMP) process in integrated circuit fabrication. CIRP Ann Manuf Technol 50:233-238 (2001)
[30]
Kondo S, Sakuma N, Homma Y, Goto Y, Ohashi N, Yamaguchi H, Owada N. Abrasive-free polishing for copper damascene interconnection. J Electrochem Soc 147:3907-3913 (2000)
[31]
Chiu J, Yu C, Shen S. Application of soft landing to the process control of chemical mechanical polishing. Microelectron Eng 65:345-356 (2003)
[32]
Denardis D, Sorooshian J, Habiro M, Rogers C, Philipossian A. Tribology and removal rate characteristics of abrasive-free slurries for copper CMP applications. Jpn J Appl Phys 42:6809-6814 (2003)
Friction
Pages 327-332
Cite this article:
HE X, CHEN Y, ZHAO H, et al. Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper. Friction, 2013, 1(4): 327-332. https://doi.org/10.1007/s40544-013-0017-z

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Received: 13 March 2013
Revised: 22 May 2013
Accepted: 30 May 2013
Published: 20 July 2013
© The author(s) 2013

This article is published with open access at Springerlink.com

Open Access: This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

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