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Research Article | Open Access

Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry

Weitao ZHANG, Hong LEI()
Research Center of Nano-Science and Nano-Technology, Shanghai University, Shanghai 200444, China
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Abstract

The effect of tert-butyl hydroperoxide-sodium pyrosulfite ((CH3)3COOH-Na2S2O5) as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing (AFP) of a hard disk substrate. The polishing results show that the H2O2-C4H10O2-Na2S2O5 slurry exhibits a material removal rate (MRR) that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate. In addition, the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry. Further, we investigate the polishing mechanism of H2O2-C4H10O2-Na2S2O5 slurry. Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H2O2-C4H10O2-Na2S2O5 slurry is much greater than that of the H2O2 slurry. The results of potentiodynamic polarization measurements show that the hard disk substrate in the H2O2-C4H10O2-Na2S2O5 slurry can be rapidly etched, and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H2O2-C4H10O2-Na2S2O5 slurry may be loose, and can be removed easily during polishing. The better oxidizing and etching ability of H2O2-C4H10O2-Na2S2O5 slurry leads to a higher MRR in AFP for hard disk substrates.

Keywords

abrasive-free polishingmaterial removal rateinitiatorhard disk substrate

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Friction
Volume 1 Issue 4,
December 2013
Pages 359-366
DOI: 10.1007/s40544-013-0032-0
Cite this article:
ZHANG W, LEI H. Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry. Friction, 2013, 1(4): 359-366. https://doi.org/10.1007/s40544-013-0032-0
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