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Research Article | Open Access

Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry

Weitao ZHANG, Hong LEI( )
Research Center of Nano-Science and Nano-Technology, Shanghai University, Shanghai 200444, China
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Abstract

The effect of tert-butyl hydroperoxide-sodium pyrosulfite ((CH3)3COOH-Na2S2O5) as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing (AFP) of a hard disk substrate. The polishing results show that the H2O2-C4H10O2-Na2S2O5 slurry exhibits a material removal rate (MRR) that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate. In addition, the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry. Further, we investigate the polishing mechanism of H2O2-C4H10O2-Na2S2O5 slurry. Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H2O2-C4H10O2-Na2S2O5 slurry is much greater than that of the H2O2 slurry. The results of potentiodynamic polarization measurements show that the hard disk substrate in the H2O2-C4H10O2-Na2S2O5 slurry can be rapidly etched, and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H2O2-C4H10O2-Na2S2O5 slurry may be loose, and can be removed easily during polishing. The better oxidizing and etching ability of H2O2-C4H10O2-Na2S2O5 slurry leads to a higher MRR in AFP for hard disk substrates.

Keywords

material removal rateabrasive-free polishinginitiatorhard disk substrate

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Friction
Volume 1 Issue 4,
December 2013
Pages 359-366
DOI: 10.1007/s40544-013-0032-0
Cite this article:
ZHANG W, LEI H. Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry. Friction, 2013, 1(4): 359-366. https://doi.org/10.1007/s40544-013-0032-0

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Received: 29 August 2013
Revised: 16 October 2013
Accepted: 25 October 2013
Published: 23 November 2013
© The author(s) 2013

This article is published with open access at Springerlink.com

Open Access: This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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