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Research Article | Open Access

Material removal mechanism of copper chemical mechanical polishing with different particle sizes based on quasi-continuum method

Aibin ZHU()Dayong HEShengli HEWencheng LUO
Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, Xi’an Jiaotong University, Xi’an 710049, China
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Abstract

In this paper, the material removal mechanism of copper chemical mechanical polishing was studied by the quasicontinuum method that integrated molecular dynamics and the finite element method. By analyzing the abrasive process of different particle sizes on single crystal copper, we investigated the internal material deformation, the formation of chips, the stress distribution, and the change of cutting force. Results showed that shear band deformation was generated along the cutting direction at approximately 45° inside the workpiece material. The deformation was accompanied by dislocations and sliding phenomena in the shear band region. Smaller abrasive particle size led to poor quality of the workpiece, while a larger particle size led to better quality. However, larger particle size resulted in greater plastic deformation and deeper residual stress inside the workpiece. Size change of abrasive particles had little effect on the tangential cutting force.

References

[1]
Steigerwald J, Murarka S, Gutmann R, Duquette D. Chemical processes in the chemical mechanical polishing of copper. Mater Chem Phys 41(3): 217-228 (1995)
[2]
Yokosuka T, Kurokawa H, Takami S, Kubo M, Miyamoto A, Imamura A. Development of new tight-binding molecular dynamics program to simulate chemical-mechanical polishing processes. Japan J Appl Phys 41(4S): 2410 (2002)
[3]
Ye Y, Biswas R, Bastawros A, Chandra A. Simulation of chemical mechanical planarization of copper with molecular dynamics. Appl Phys Lett 81(10): 1875-1877 (2002)
[4]
Han X, Hu Y, Yu S. Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method. Appl Phys A 95(3): 899-905 (2009)
[5]
Si L, Guo D, Luo J, Lu X. Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study. J Appl Phys 107(6): 064310 (2010)
[6]
Wu L. An analytical model of contact pressure distribution caused by 3-D wafer topography in chemical-mechanical polishing processes. J Electrochem Soc 159(3): H266-H276 (2012)
[7]
Zhou P, Guo D, Kang R, Jin Z. A mixed elastohydrodynamic lubrication model with layered elastic theory for simulation of chemical mechanical polishing. Int J Adv Manuf Technol 69(5–8): 1009-1016 (2013)
[8]
Chen R, Jiang R, Lei H, Liang M. Material removal mechanism during porous silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation. Appl Surf Sci 264(1): 148-156 (2013)
[9]
Lee H, Dornfeld DA, Jeong H. Mathematical model-based evaluation methodology for environmental burden of chemical mechanical planarization process. Int J Prec Eng Manuf-Green Technol 1(1): 11-15 (2014)
[10]
Yang Z, Xu Q, Chen L. A chemical mechanical planarization model including global pressure distribution and feature size effects. IEEE Transactions on Components Packaging & Manufacturing Technology 6(2): 177-184 (2016)
[11]
Larsen-Basse J, Liang H. Probable role of abrasion in chemo-mechanical polishing of tungsten. Wear 233: 647-654 (1999)
[12]
Tadmor E B, Ortiz M, Phillips R. Quasicontinuum analysis of defects in solids. Philosophical Magazine A 73(6): 1529-1563 (1996)
[13]
Miller R, Tadmor E, Phillips R, Ortiz M. Quasicontinuum simulation of fracture at the atomic scale. Modelling and Simulation in Materials Science and Engineering 6(5): 607-638 (1998)
[14]
Shenoy V, Miller R, Tadmor E, Phillips R, Ortiz M. Quasicontinuum models of interfacial structure and deformation. Phys Rev Lett 80(4): 742-745 (1998)
[15]
Tadmor E, Miller R, Phillips R, Ortiz M. Nanoindentation and incipient plasticity. J Mater Res 14(06): 2233-2250 (1999)
Friction
Pages 99-107
Cite this article:
ZHU A, HE D, HE S, et al. Material removal mechanism of copper chemical mechanical polishing with different particle sizes based on quasi-continuum method. Friction, 2017, 5(1): 99-107. https://doi.org/10.1007/s40544-017-0142-1
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