AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
Powered by AMiner. Clicking this button will take you away from SciOpen.
Home Friction Article
PDF (2.4 MB)
Cite
EndNote(RIS) BibTeX
Collect
Submit Manuscript AI Chat Paper
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article | Open Access

Mechanochemical reactions of GaN–Al2O3 interface at the nanoasperity contact: Roles of crystallographic polarity and ambient humidity

Jian GUO1, Jian GAO2, Chen XIAO2,3( ), Lei CHEN2,4( ), Linmao QIAN2,4
School of Mechanical Engineering, University of South China, Hengyang 421001, China
Tribology Research Institute, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, China
Advanced Research Center for Nanolithography (ARCNL), Science Park 106, Amsterdam 1098XG, the Netherlands
Technology and Equipment of Rail Transit Operation and Maintenance Key Laboratory of Sichuan Province, Southwest Jiaotong University, Chengdu 610031, China
Show Author Information

Graphical Abstract

Abstract

Mechanochemical reactions of the GaN–Al2O3 interface offer a novel principle for scientific and technological merits in the micro-/nano-scale ultra-precision surface machining. In this work, the mechanochemical reactions on Ga- and N-faced GaN surfaces rubbed by the Al2O3 nanoasperity as a function of the environmental humidity were investigated. Experimental results indicate that the N-face exhibits much stronger mechanochemical removal over the relative humidity range of 20%–80% than the Ga-face. Increasing water molecules in environmental conditions significantly promotes the interfacial mechanochemical reactions and hence accelerates the atomic attrition on N-face. The hypothesized mechanism of the selective water-involved mechanochemical removal is associated with the dangling bond configuration, which affects the mechanically-stimulated chemical reactions via altering the activation energy barrier to form the bonding bridge across the sliding interface. These findings can enrich the understanding of the underlying mechanism of mechanochemical reactions at GaN–Al2O3 interface and a broad cognition for regulating the mechanochemical reactions widely existing in scientific and engineering applications.

Keywords

crystallographic polarityambient humiditymechanochemical removalGaN–Al2O3 interface

References

[1]
Pust P, Schmidt P J, Schnick W. A revolution in lighting. Nat Mater 14: 454–458 (2015)
Crossref Google Scholar
[2]
Tsao J Y, Crawford M H, Coltrin M E, Fischer A J, Koleske D D, Subramania G S, Wang G T, Wierer J J, Karlicek R F Jr. Toward smart and ultra-efficient solid-state lighting. Adv Opt Mater 2: 809–836 (2014)
Crossref Google Scholar
[3]
Meneghesso G, Meneghini M, Zanoni E. Gallium nitride-enabled high frequency and high efficiency power conversion. Berlin (Germany): Springer, 2018.
Crossref
[4]
Glavin N R, Chabak K D, Heller E R, Moore E A, Prusnick T A, Maruyama B, Walker D E Jr, Dorsey D L, Paduano Q, Snure M. Flexible gallium nitride for high-performance, strainable radio-frequency devices. Adv Mater 29: 1701838 (2017)
Crossref Google Scholar
[5]
Sarangadharan I, Regmi A, Chen Y W, Hsu C P, Chen P C, Chang W H, Lee G Y, Chyi J I, Shiesh S C, Lee G B, Wang Y L. High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN high electron mobility transistor (HEMT) biosensors. Biosens Bioelectron 100: 282–289 (2018)
Crossref Google Scholar
[6]
Lev L, Maiboroda I, Husanu M A, Grichuk E, Chumakov N, Ezubchenko I, Chernykh I, Wang X, Tobler B, Schmitt T. K-space imaging of anisotropic 2D electron gas in GaN/ GaAlN high-electron-mobility transistor heterostructures. Nat Commun 9: 1–9 (2018)
Crossref Google Scholar
[7]
Kubota A, Iwakiri A. Tribochemical polishing of bulk gallium nitride substrate. Precis Eng 56: 69–79 (2019)
Crossref Google Scholar
[8]
Aida H, Doi T, Takeda H, Katakura H, Kim S W, Koyama K, Yamazaki T, Uneda M. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials. Curr Appl Phys 12: S41–S46 (2012)
Crossref Google Scholar
[9]
Gong H, Pan G, Zou C, Zhou Y, Xu L. Investigation on the variation of the step-terrace structure on the surface of polished GaN wafer. Surf Interfaces 6: 197–201 (2017)
Crossref Google Scholar
[10]
Shi X, Zou C, Pan G, Gong H, Xu L, Zhou Y. Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−–Fe2+ based slurry. Tribol Int 110: 441–450 (2017)
Crossref Google Scholar
[11]
Zhao D W, Lu X C. Chemical mechanical polishing: Theory and experiment. Friction 1(4): 306–326 (2013)
Crossref Google Scholar
[12]
Xiao C, Guo J, Zhang P, Chen C, Chen L, Qian L. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon. Sci Rep 7: 40750 (2017)
Crossref Google Scholar
[13]
Xiao C, Shi P, Yan W, Chen L, Qian L, Kim S H. Thickness and structure of adsorbed water layer and effects on adhesion and friction at nanoasperity contact. Colloids and Interfaces 3: 55 (2019)
Crossref Google Scholar
[14]
Liu Z, Gong J, Xiao C, Shi P, Kim S H, Chen L, Qian L. Temperature-dependent mechanochemical wear of silicon in water: the role of Si–OH surfacial groups. Langmuir 35: 7735–7743 (2019)
Crossref Google Scholar
[15]
Chen L, Qian L M. Role of interfacial water in adhesion, friction, and wear—A critical review. Friction 9(1): 1–28 (2021)
Crossref Google Scholar
[16]
Hu C Z, Lv J Z, Bai M L, Zhang X L, Tang D W. Molecular dynamics simulation of effects of nanoparticles on frictional heating and tribological properties at various temperatures. Friction 8(3): 531–541 (2020)
Crossref Google Scholar
[17]
Meng Y G, Xu J, Jin Z M, Parkash B, Hu Y Z. A review of recent advances in tribology. Friction 8(2): 221–300 (2020)
Crossref Google Scholar
[18]
Yu B, Gao J, Jin C, Xiao C, Wu J, Liu H, Jiang S, Chen L, Qian L. Humidity effects on tribochemical removal of GaAs surfaces. Appl Phys Express 9: 066703 (2016)
Crossref Google Scholar
[19]
Zeng G, Sun W, Song R, Tansu N, Krick B A. Crystal orientation dependence of gallium nitride wear. Sci Rep 7: 1–6 (2017)
Crossref Google Scholar
[20]
Zeng G, Tansu N, Krick B A. Moisture dependent wear mechanisms of gallium nitride. Tribol Int 118: 120–127 (2018)
Crossref Google Scholar
[21]
Zeng G, Tan C K, Tansu N, Krick B A. Ultralow wear of gallium nitride. Appl Phys Lett 109: 051602 (2016)
Crossref Google Scholar
[22]
Gong J, Xiao C, Yu J, Peng J, Yu B, Chen L, Qian L. Stress-enhanced dissolution and delamination wear of crystal CaF2 in water condition. Wear 418–419: 86–93 (2019)
Crossref Google Scholar
[23]
Carlton H, Huitink D, Liang H. Tribochemistry as an alternative synthesis pathway. Lubricants 8: 87 (2020)
Crossref Google Scholar
[24]
Jung Y, Ahn J, Baik K H, Kim D, Pearton S J, Ren F, Kim J. Chemical etch characteristics of N-face and Ga-face GaN by phosphoric acid and potassium hydroxide solutions. J Electrochem Soc 159: H117 (2011)
Crossref Google Scholar
[25]
Ng H M, Weimann N G, Chowdhury A. GaN nanotip pyramids formed by anisotropic etching. J Appl Phys 94: 650–653 (2003)
Crossref Google Scholar
[26]
Guo J, Qiu C, Zhu H, Wang Y. Nanotribological properties of Ga- and N-faced bulk gallium nitride surfaces determined by nanoscratch experiments. Materials 12: 2653 (2019)
Crossref Google Scholar
[27]
Hayashi S, Koga T, Goorsky M. Chemical mechanical polishing of GaN. J Electrochem Soc 155: H113 (2007)
Crossref Google Scholar
[28]
Asghar K, Qasim M, Das D. Effect of polishing parameters on chemical mechanical planarization of C-plane (0001) gallium nitride surface using SiO2 and Al2O3 abrasives. ECS J Solid State Sc 3: P277 (2014)
Crossref Google Scholar
[29]
Snyder P J, Kirste R, Collazo R, Ivanisevic A. Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior. RSC Adv 6: 97873–97881 (2016)
Crossref Google Scholar
[30]
Xiao C, Xin X, He X, Wang H, Chen L, Kim S H, Qian L. Surface structure dependence of mechanochemical etching: Scanning probe-based nanolithography study on Si (100), Si (110), and Si (111). ACS Appl Mater Interfaces 11: 20583–20588 (2019)
Crossref Google Scholar
[31]
Ogletree D, Carpick R W, Salmeron M. Calibration of frictional forces in atomic force microscopy. Rev Sci Instrum 67: 3298–3306 (1996)
Crossref Google Scholar
[32]
Schwarz U D. A generalized analytical model for the elastic deformation of an adhesive contact between a sphere and a flat surface. J Colloid Interface Sci 261: 99–106 (2003)
Crossref Google Scholar
[33]
Nowak R, Pessa M, Suganuma M, Leszczynski M, Grzegory I, Porowski S, Yoshida F. Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal. Appl Phys Lett 75: 2070–2072 (1999)
Crossref Google Scholar
[34]
Murata J, Okamoto T, Sadakuni S, Hattori A N, Yagi K, Sano Y, Arima K, Yamauchi K. Atomically smooth gallium nitride surfaces prepared by chemical etching with platinum catalyst in water. J Electrochem Soc 159: H417 (2012)
Crossref Google Scholar
[35]
Chen L, Wen J, Zhang P, Yu B, Chen C, Ma T, Lu X, Kim S H, Qian L. Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions. Nat Commun 9: 1542 (2018)
Crossref Google Scholar
[36]
Horng J H, Len M L, Lee J S. The contact characteristics of rough surfaces in line contact during running-in process. Wear 253: 899–913 (2002)
Crossref Google Scholar
[37]
de Jong A, Vonk V, Boćkowski M, Grzegory I, Honkimäki V, Vlieg E. Complex geometric structure of a simple solid-liquid interface: GaN(0001)–Ga. Phys Rev Lett 124: 086101 (2020)
Crossref Google Scholar
[38]
Ramalho A, Miranda J C. The relationship between wear and dissipated energy in sliding systems. Wear 260: 361–367 (2006)
Crossref Google Scholar
[39]
Hu Y Z, Ma T B, Wang H. Energy dissipation in atomic-scale friction. Friction 1(1): 24–40 (2013)
Crossref Google Scholar
[40]
Zhao Y P, Zhu X. Physical mechanisms of atomic-scale friction. In Surfactants in Tribology. Biresaw G, Mittal K L, Eds. Florida: CRC Press, 2015: 3–34.
Crossref
[41]
Xiao C, Chen C, Guo J, Zhang P, Chen L, Qian L. Threshold contact pressure for the material removal on monocrystalline silicon by SiO2 microsphere. Wear 376–377: 188–193 (2017)
Crossref Google Scholar
[42]
Liu C, Zhao Y P, Yu T. Measurement of microscopic deformation in a CuAlNi single crystal alloy by nanoindentation with a heating stage. Mater Design 26: 465–468 (2005)
Crossref Google Scholar
[43]
Dickinson J, Park N S, Kim M W, Langford S. A scanning force microscope study of a tribochemicalsystem: Stress-enhanced dissolution. Tribol Lett 3: 69–80 (1997)
Crossref Google Scholar
[44]
Qi H M, Hu W, He H T, Zhang Y F, Song C F, Yu J X. Quantitative analysis of the tribological properties of phosphate glass at the nano- and macro-scales. Friction 9(5): 1138–1149 (2021)
Crossref Google Scholar
[45]
Zeng G, Yang X, Tan C-K, Marvel C J, Koel B E, Tansu N, Krick B A. Shear-induced changes of electronic properties in gallium nitride. ACS Appl Mater Interfaces 10: 29048–29057 (2018)
Crossref Google Scholar
[46]
Du Y A, Chen Y W, Kuo J L. First principles studies on the redox ability of (Ga1−xZnx)N1−xOx solid solutions and thermal reactions for H2 and O2 production on their surfaces. Phys Chem Chem Phys 15: 19807–19818 (2013)
Crossref Google Scholar
[47]
Oue M, Inagaki K, Yamauchi K, Morikawa Y. First-principles theoretical study of hydrolysis of stepped and kinked Ga-terminated GaN surfaces. Nanoscale Res Lett 8: 1–12 (2013)
Crossref Google Scholar
[48]
Timoshkin A Y, Bettinger H F, Schaefer H F. Ring, chain, and cluster compounds in the Cl−Ga−N−H system. Inorg Chem 41: 738–747 (2002)
Crossref Google Scholar
[49]
Tzeli D, Tsekouras A A. The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): The importance of the basis set superposition error in strongly bound systems. J Chem Phys 128: 144103 (2008)
Crossref Google Scholar
[50]
Li D, Sumiya M, Fuke S, Yang D, Que D, Suzuki Y, Fukuda Y. Selective etching of GaN polar surface in potassium hydroxide solution studied by X-ray photoelectron spectroscopy. J Appl Phys 90: 4219–4223 (2001)
Crossref Google Scholar
[51]
Kim M S, Paluvai N R, Kim H T, Park J G. Adsorption of sodium dodecyl sulfate on cleaning of an N-polar GaN surface in an alkaline solution. Mater Sci Eng B 222: 1–6 (2017)
Crossref Google Scholar
[52]
Zhuang D, Edgar J. Wet etching of GaN, AlN, and SiC: A review. Mater Sci Eng R 48: 1–46 (2005)
Crossref Google Scholar
Friction
Volume 10 Issue 7,
July 2022
Pages 1005-1018
DOI: 10.1007/s40544-021-0501-9
Cite this article:
GUO J, GAO J, XIAO C, et al. Mechanochemical reactions of GaN–Al2O3 interface at the nanoasperity contact: Roles of crystallographic polarity and ambient humidity. Friction, 2022, 10(7): 1005-1018. https://doi.org/10.1007/s40544-021-0501-9

834

Views

52

Downloads

36

Crossref

55

Web of Science

48

Scopus

4

CSCD

Altmetrics
Received: 26 December 2020
Revised: 18 January 2021
Accepted: 05 February 2021
Published: 15 May 2021
© The author(s) 2021.

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made.

The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.

To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
Return