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Research Article | Open Access

Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments

Lei XU1,2,3, Kihong PARK2, Hong LEI1,3( ), Pengzhan LIU2, Eungchul KIM2, Yeongkwang CHO2, Taesung KIM2,4( ), Chuandong CHEN5
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
School of Mechanical Engineering, Sungkyunkwan University, Gyeonggi-do 16419, Republic of Korea
Research Center of Nano Science and Technology, Shanghai University, Shanghai 200444, China
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Gyeonggi-do 16419, Republic of Korea
Baotou Research Institute of Rare Earths, Baotou 014030, China
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Graphical Abstract

Abstract

The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing (CMP) process cannot be ignored. In this study, the material removal mechanism of cavitation in the polishing process was investigated in detail. Based on the mixed lubrication or thin film lubrication, bubble–wafer plastic deformation, spherical indentation theory, Johnson–Cook (J–C) constitutive model, and the assumption of periodic distribution of pad asperities, a new model suitable for micro-nano bubble auxiliary material removal in CMP was developed. The model integrates many parameters, including the reactant concentration, wafer hardness, polishing pad roughness, strain hardening, strain rate, micro-jet radius, and bubble radius. The model reflects the influence of active bubbles on material removal. A new and simple chemical reaction method was used to form a controllable number of micro-nano bubbles during the polishing process to assist in polishing silicon oxide wafers. The experimental results show that micro-nano bubbles can greatly increase the material removal rate (MRR) by about 400% and result in a lower surface roughness of 0.17 nm. The experimental results are consistent with the established model. In the process of verifying the model, a better understanding of the material removal mechanism involved in micro-nano bubbles in CMP was obtained.

Keywords

micro-nano bubblesmixed lubricationmaterial removal mechanismchemical mechanical polishing (CMP)modeling

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References

[1]
Zantye P B, Kumar A, Sikder A K. Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R Rep 45(3–6): 89–220 (2004)
Crossref Google Scholar
[2]
Moore G E. Cramming more components onto integrated circuits. Proc IEEE 86(1): 82–85 (1998)
Crossref Google Scholar
[3]
Xu W H, Lu X C, Pan G S, Lei Y Z, Luo J B. Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate. Appl Surf Sci 256(12): 3936–3940 (2010)
Crossref Google Scholar
[4]
Xu W H, Lu X C, Pan G S, Lei Y Z, Luo J B. Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles; pad and sapphire substrate during chemical mechanical polishing (CMP). Appl Surf Sci 257(7): 2905–2911 (2011)
Crossref Google Scholar
[5]
Sun R Y, Yang X, Arima K, Kawai K, Yamamura K. High-quality plasma-assisted polishing of aluminum nitride ceramic. CIRP Ann 69(1): 301–304 (2020)
Crossref Google Scholar
[6]
Wang W T, Zhang B G, Shi Y H, Ma T D, Zhou J K, Wang R, Wang H X, Zeng N Y. Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2. J Mater Process Technol 295: 117150 (2021)
Crossref Google Scholar
[7]
Yu X, Zhang B G, Wang R, Kao Z X, Yang S H, Wei W. Effect of photocatalysts on electrochemical properties and chemical mechanical polishing rate of GaN. Mater Sci Semicond Process 121: 105387 (2021)
Crossref Google Scholar
[8]
Aida H, Kim S W, Ikejiri K, Doi T, Yamazaki T, Seshimo K, Koyama K, Takeda H, Aota N. Precise mechanical polishing of brittle materials with free diamond abrasives dispersed in micro-nano-bubble water. Precis Eng 40: 81–86 (2015)
Crossref Google Scholar
[9]
Uneda M, Fujii K. Highly efficient chemical mechanical polishing method for SiC substrates using enhanced slurry containing bubbles of ozone gas. Precis Eng 64: 91–97 (2020)
Crossref Google Scholar
[10]
Li L, He Q, Zheng M, Ren Y, Li X L. Improvement in polishing effect of silicon wafer due to low-amplitude megasonic vibration assisting chemical–mechanical polishing. J Mater Process Technol 263: 330–335 (2019)
Crossref Google Scholar
[11]
Bai L X, Yan J C, Zeng Z J, Ma Y H. Cavitation in thin liquid layer: A review. Ultrason Sonochem 66: 105092 (2020)
Crossref Google Scholar
[12]
Benjamin T B, Ellis A T. The collapse of cavitation bubbles and the pressure thereby produced againist solid boundaries. Phil Trans Roy Soc Lond A 260(1110): 221–240 (1966)
Crossref Google Scholar
[13]
Sreedhar B K, Albert S K, Pandit A B. Cavitation damage: Theory and measurements—A review. Wear 372–373: 177–196 (2017)
Crossref Google Scholar
[14]
Xin J, Cai W, Tichy J A. A fundamental model proposed for material removal in chemical–mechanical polishing. Wear 268(5–6): 837–844 (2010)
Crossref Google Scholar
[15]
Brack P, Dann S E, Wijayantha K G U. Heterogeneous and homogenous catalysts for hydrogen generation by hydrolysis of aqueous sodium borohydride (NaBH4) solutions. Energy Sci Eng 3(3): 174–188 (2015)
Crossref Google Scholar
[16]
Zhang J S, Fisher T S, Gore J P, Hazra D, Ramachandran P V. Heat of reaction measurements of sodium borohydride alcoholysis and hydrolysis. Int J Hydrogen Energ 31(15): 2292–2298 (2006)
Crossref Google Scholar
[17]
Prasad A, Fotou G, Li S T. The effect of polymer hardness, pore size, and porosity on the performance of thermoplastic polyurethane-based chemical mechanical polishing pads. J Mater Res 28(17): 2380–2393 (2013)
Crossref Google Scholar
[18]
Luo J F, Dornfeld D A. Material removal mechanism in chemical mechanical polishing: Theory and modeling. IEEE Trans Semicond Manuf 14(2): 112–133 (2001)
Crossref Google Scholar
[19]
Luo J F, Dornfeld D A. Effects of abrasive size distribution in chemical mechanical planarization: Modeling and verification. IEEE Trans Semicond Manuf 16(3): 469–476 (2003)
Crossref Google Scholar
[20]
Luo J F, Dornfeld D A. Material removal regions in chemical mechanical planarization for submicron integrated circuit fabrication: Coupling effects of slurry chemicals, abrasive size distribution, and wafer-pad contact area. IEEE Trans Semicond Manuf 16(1): 45–56 (2003)
Crossref Google Scholar
[21]
Shan L, Levert J, Meade L, Tichy J, Danyluk S. Interfacial fluid mechanics and pressure prediction in chemical mechanical polishing. J Tribol 122(3): 539–543 (2000)
Crossref Google Scholar
[22]
Lortz W, Menzel F, Brandes R, Klaessig F, Knothe T, Shibasaki T. News from the M in CMP—Viscosity of CMP slurries, a constant? MRS Proc 767: F1.7 (2003)
Crossref Google Scholar
[23]
Ye L Z, Zhu X J. Analysis of the effect of impact of near-wall acoustic bubble collapse micro-jet on Al1060. Ultrason Sonochem 36: 507–516 (2017)
Crossref Google Scholar
[24]
Roy S C, Franc J P, Pellone C, Fivel M. Determination of cavitation load spectra—Part 1: Static finite element approach. Wear 344–345: 110–119 (2015)
Crossref Google Scholar
[25]
Ye L Z, Zhu X J, He Y, Wei X M. Ultrasonic cavitation damage characteristics of materials and a prediction model of cavitation impact load based on size effect. Ultrason Sonochem 66: 105115 (2020)
Crossref Google Scholar
[26]
Zhu S S, Liu J, Deng X. Modification of strain rate strengthening coefficient for Johnson–Cook constitutive model of Ti6Al4V alloy. Mater Today Commun 26: 102016 (2021)
Crossref Google Scholar
[27]
Francis H A. Phenomenological analysis of plastic spherical indentation. J Eng Mater Technol 98(3): 272–281 (1976)
Crossref Google Scholar
[28]
Lee J, Shin H, Choi K S, Lee J, Choi J Y, Yu H K. Carbon layer supported nickel catalyst for sodium borohydride (NaBH4) dehydrogenation. Int J Hydrogen Energ 44(5): 2943–2950 (2019)
Crossref Google Scholar
[29]
Rayleigh L. VIII. On the pressure developed in a liquid during the collapse of a spherical cavity. Lond Edinb Dublin Philos Mag J Sci 34(200): 94–98 (1917)
Crossref Google Scholar
[30]
Plesset M S. The dynamics of cavitation bubbles. J Appl Mech 16(3): 277–282 (1949)
Crossref Google Scholar
[31]
Takahashi M, Chiba K, Li P. Free-radical generation from collapsing microbubbles in the absence of a dynamic stimulus. J Phys Chem B 111(6): 1343–1347 (2007)
Crossref Google Scholar
[32]
Xu L, Liu P Z, Lei H, Park K, Kim E, Cho Y, Lee J, Park S, Kim T. Auxiliary mechanism of in-situ micro-nano bubbles in oxide chemical mechanical polishing. Precis Eng 74: 20–35 (2022)
Crossref Google Scholar
[33]
Endo K, Okada T, Nakashima M. A study of erosion between two parallel surfaces oscillating at close proximity in liquids. J Lubr Tech 89(3): 229–236 (1967)
Crossref Google Scholar
[34]
Bai L X, Chen X G, Zhu G, Xu W L, Lin W J, Wu P F, Li C, Xu D L, Yan J C. Surface tension and quasi-emulsion of cavitation bubble cloud. Ultrason Sonochem 35: 405–414 (2017)
Crossref Google Scholar
[35]
Hong S, Han D, Jang K S. Zeta potential-tunable silica abrasives and fluorinated surfactants in chemical mechanical polishing slurries. Wear 466–467: 203590 (2021)
Crossref Google Scholar
[36]
Wang C, Zhou J W, Luo C, Wang C W, Zhang X. Synergist effect of potassium periodate and potassium persulfate on improving removal rate of Ruthenium during chemical mechanical polishing. Mater Sci Eng B 262: 114764 (2020)
Crossref Google Scholar
[37]
Korkmaz M E, Günay M, Verleysen P. Investigation of tensile Johnson–Cook model parameters for Nimonic 80A superalloy. J Alloys Compd 801: 542–549 (2019)
Crossref Google Scholar
[38]
Chowdhury S C, Haque B Z (Gama), Gillespie J W Jr. Molecular dynamics simulations of the structure and mechanical properties of silica glass using ReaxFF. J Mater Sci 51(22): 10139–10159 (2016)
Crossref Google Scholar
[39]
Hung A J, Tsai S F, Hsu Y Y, Ku J R, Chen Y H, Yu C C. Kinetics of sodium borohydride hydrolysis reaction for hydrogen generation. Int J Hydrogen Energ 33(21): 6205–6215 (2008)
Crossref Google Scholar
[40]
Aida H, Takeda H, Doi T. Analysis of mechanically induced subsurface damage and its removal by chemical mechanical polishing for gallium nitride substrate. Precis Eng 67: 350–358 (2021)
Crossref Google Scholar
[41]
Zhang L X, Chen P, An T, Dai Y W, Qin F. Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process. Curr Appl Phys 19(5): 570–581 (2019)
Crossref Google Scholar
Friction
Volume 11 Issue 9,
September 2023
Pages 1624-1640
DOI: 10.1007/s40544-022-0668-8
Cite this article:
XU L, PARK K, LEI H, et al. Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments. Friction, 2023, 11(9): 1624-1640. https://doi.org/10.1007/s40544-022-0668-8

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Received: 21 May 2021
Revised: 13 December 2021
Accepted: 16 June 2022
Published: 25 March 2023
© The author(s) 2022.

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