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Research Article | Open Access

Criteria for the growth of large-area adlayer-free monolayer graphene films by chemical vapor deposition

Changqing Shena,b, Xingzhou Yana,b, Fangzhu Qinga,b, Xiaobin Niuc, Richard Stehled, Samuel S. Maoe,f, Wanli Zhanga,b, Xuesong Lia,b( )
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 610054, China
Department of Mechanical Engineering, Sichuan University-Pittsburgh Institute, Sichuan University, Chengdu, 610207, China
Institute of New Energy, Shenzhen, 518031, China
Department of Mechanical Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
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Graphical Abstract

Abstract

Homogeneity is important to material applications for good performance of individual devices, for making AB-stacked bilayer graphene in a layer-by-layer stacking order, and from the point of view of industrial production. Among many properties to be controlled, for the case of graphene, the thickness (or layer number) uniformity is the prerequisite. Chemical vapor deposition (CVD) of C precursors on Cu substrates is the most popular method to produce large-area graphene films. To date, precise control on the number of graphene layers as well as the uniformity over a large area is still very challenging. In this work, with a further understanding of the factors affecting adlayer growth, the synthesis of large-area adlayer-free monolayer graphene (MLG) films was achieved up to tens of squared centimeters in area by just using untreated Cu foil and a normal CVD process. We found that keeping equal C precursor concentration on the two sides of the Cu substrate is a criterion in addition to other factors such as the ratio of H: C and the substrate surface morphology for the growth of adlayer-free MLG. This finding is not only of great significance for the industrial production of large-area adlayer-free MLG films but also instructive for the synthesis of homogeneous few-layer graphene.

Keywords

GrapheneAdlayer-freeChemical vapor depositionMonolayerBilayer

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Journal of Materiomics
Volume 5 Issue 3,
September 2019
Pages 463-470
DOI: 10.1016/j.jmat.2019.01.009
Cite this article:
Shen C, Yan X, Qing F, et al. Criteria for the growth of large-area adlayer-free monolayer graphene films by chemical vapor deposition. Journal of Materiomics, 2019, 5(3): 463-470. https://doi.org/10.1016/j.jmat.2019.01.009

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Received: 12 December 2018
Revised: 24 January 2019
Accepted: 25 January 2019
Published: 31 January 2019
© 2019 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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