Home Journal of Materiomics Article
Article Link
Cite
EndNote(RIS) BibTeX
Collect
Submit Manuscript
Show Outline
Outline
Graphical Abstract
Abstract
Keywords
References
Show full outline
Hide outline
Research Article | Open Access

Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature

V. Kampylafkaa, A. Kostopoulosa, M. Modreanub, M. Schmidtb, E. Gagaoudakisc,d, K. Tsagarakia, V. Kontomitroua, G. Konstantinidisa, G. Deligeorgisa, G. Kiriakidisc,d, E. Aperathitisa()
Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology—FORTH-Hellas, P.O. Box 1385, Heraklion, 70013, Crete, Greece
Tyndall National Institute-University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland
Physics Department, University of Crete, P.O. Box 2208, 71003, Heraklion, Crete, Greece
Transparent Conductive Materials & Devices Group, Institute of Electronic Structure & Laser, Foundation for Research and Technology FORTH-Hellas, P.O. Box 1385, Heraklion, 70013, Crete, Greece
Show Author Information

Graphical Abstract

View original image Download original image

Abstract

ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates. A multi-target rf-sputtering system was used for the growth of all oxide films as multilayers in a single growth run without breaking the vacuum in the growth chamber. The nitrogen-containing films (less than 1.5 at.% of nitrogen) were n-type ZnO when deposited in oxygen-deficient Ar plasma (10% O2) and p-type ZnO when deposited in oxygen-rich Ar plasma (50% O2). The all-oxide homojunction ITO/n-ZnO/p-ZnO/ITO/glass was fabricated in a single deposition run and exhibited visible transparency in the range of 75–85%. The n/p ZnO homojunctions, having metallic contacts, formed on conventionally processed substrates showed a fairly unstable behavior concerning the current-voltage characteristics. However, the same homojunctions formed on Si3N4-patterned substrates and stored in atmosphere for a period of five months were stable exhibiting a turn-on voltage of around 1.5 V. The realization of a room temperature sputtered transparent and stable ZnO homojunction paves the way to the realization of all-oxide transparent optoelectronic devices.

Keywords

ZnO homojunctionp-type ZnOSingle step sputteringStabilityPatterned substrate

References

[1]

Yun J. Ultrathin metal films for transparent electrodes of flexible optoelectronic devices. Adv Funct Mater 2017;27(1-21): 1606641. https://doi.org/10.1002/adfm.201606641.

Crossref Google Scholar
[2]

Zhan Z, An J, Wei Y, Tran VT, Du H. Inkjet-printed optoelectronics. Nanoscale 2017;9: 965-93. https://doi.org/10.1039/C6NR08220C.

Crossref Google Scholar
[3]

Gagaoudakis E, Michail G, Aperathitis E, Kortidis I, Binas V, Panagopoulou M, Raptis YS, Tsoukalas D, Kiriakidis G. Low temperature rf-sputtered thermochromic VO2 films on flexible glass substrates. Adv Mat Lett 2017;8: 757-61. https://doi.org/10.5185/amlett.2017.6934.

Crossref Google Scholar
[4]

Cai G, Wang J, Lee PS. Next-generation multifunctional electrochromic devices. Acc Chem Res 2016;49: 1469-76. https://doi.org/10.1021/acs.accounts.6b00183.

Crossref Google Scholar
[5]

Iseri E, Kuzum D. Implantable optoelectronic probes for in vivo optogenetics. J Neural Eng 2017;14(1-18): 031001. https://doi.org/10.1088/1741-2552/aa60b3.

Crossref Google Scholar
[6]

Tang K, Gu S-L, Ye J-D, Zhu S-M, Zhang R, Zheng Y-D. Recent progress of the native defects and p-type doping of zinc oxide. Chin Phys B 2017;26(1-23): 047702. https://doi.org/10.1088/1674-1056/26/4/047702.

Crossref Google Scholar
[7]

Grundmann M, Klüpfel F, Karsthof R, Schlupp P, Schein F-L, Splith D, Yang C, Bitter S, von Wenckstern H. Oxide bipolar electronics: materials, devices and circuits. J Phys D: Appl Phys 2016;49(25pp): 213001. https://doi.org/10.1088/0022-3727/49/21/213001.

Crossref Google Scholar
[8]

Xiong G, Wilkinson J, Mischuck B, Tuzemen S, Ucer KB, Williams RT. Control of p- and n-type conductivity in sputter deposition of undoped ZnO. Appl Phys Lett 2002;80: 1195-7. https://doi.org/10.1063/1.1449528.

Crossref Google Scholar
[9]

Balakrishnan L, Premchander P, Balasubramanian T, Gopalakrishnan N. Al-N codoping and fabrication of ZnO homojunction by RF sputtering. Vacuum 2011;85: 881-6. https://doi.org/10.1016/j.vacuum.2011.01.003.

Crossref Google Scholar
[10]

Dhara S, Giri PK. Stable p-type conductivity and enhanced photoconductivity from nitrogen-doped annealed ZnO thin film. Thin Solid Films 2012;520: 5000-6. https://doi.org/10.1016/j.tsf.2012.02.081.

Crossref Google Scholar
[11]

Rakhshani AE. Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride. J Alloy Comp 2017;695: 124-32. https://doi.org/10.1016/j.jallcom.2016.10.187.

Crossref Google Scholar
[12]

Sui YR, Yao B, Xiao L, Yang LL, Cao J, Li XF, Xing GZ, Lang JH, Li XY, Lv SQ, Meng XW, Liu XY, Yang JH. Fabrication and characterization of P–N dual acceptor doped p-type ZnO thin films. Appl Surf Sci 2013;287: 484-9. https://doi.org/10.1016/j.apsusc.2013.10.010.

Crossref Google Scholar
[13]

Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu SF, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat Mater 2005;4: 42-6. https://doi.org/10.1038/nmat1284.

Crossref Google Scholar
[14]

Lu JG, Fujita S, Kawaharamura T, Nishinaka H, Kamada Y. Junction properties of nitrogen-doped ZnO thin films. Phys Status Solidi C 2008;5: 3088-90. https://doi.org/10.1002/pssc.200779171.

Crossref Google Scholar
[15]

Wang Y, Chen Y, Zhao W, Ding L, Wen L, Li H, Jiang F, Su J, Li L, Liu N, Gao Y. A self-powered fast-response ultraviolet detector of p–n homojunction assembled from two ZnO-based nanowires. Nano-Micro Lett 2017;9(1-7): 11. https://doi.org/10.1007/s40820-016-0112-6.

Crossref Google Scholar
[16]

Lin SS, Lu JG, Ye ZZ, He HP, Gu XQ, Chen LX, Huang JY, Zhao BH. p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes. Solid State Commun 2008;148: 25-8. https://doi.org/10.1016/j.ssc.2008.07.028.

Crossref Google Scholar
[17]

Yu S, Ding L, Zheng H, Xue C, Chen L, Zhang W. Electrical and photoelectric properties of transparent Li-doped ZnO/ZnO homojunctions by pulsed laser deposition. Thin Solid Films 2013;540: 146-9. https://doi.org/10.1016/j.tsf.2013.05.125.

Crossref Google Scholar
[18]

Yang X, Xu X, Liu F, Zhang L, Ji Z, Chen Q, Cao B. Fabrication of p-ZnO: Na/n-ZnO: Na homojunction by surface pulsed laser irradiation. RSC Adv 2017;7: 37296-301. https://doi.org/10.1039/c7ra05574a.

Crossref Google Scholar
[19]

Yang T-H, Wu J-M. Thermal stability of sol–gel p-type Al–N codoped ZnO films and electric properties of nanostructured ZnO homojunctions fabricated by spin-coating them on ZnO nanorods. Acta Mater 2012;60: 3310-20. https://doi.org/10.1016/j.actamat.2012.02.045.

Crossref Google Scholar
[20]

Swapna R, Kumar MCS. Deposition of Na–N dual acceptor doped p-type ZnO thin films and fabrication of p-ZnO: (Na, N)/n-ZnO: Eu homojunction. Mater Sci Eng B 2013;178: 1032-9. https://doi.org/10.1016/j.mseb.2013.06.010.

Crossref Google Scholar
[21]

Swapna R, Kumar MCS. Fabrication and characterization of n-ZnO: Eu/p-ZnO: (Ag, N) homojunction by spray pyrolysis. Mater Res Bull 2014;49: 44-9. https://doi.org/10.1016/j.materresbull.2013.08.045.

Crossref Google Scholar
[22]

Bian JM, Li XM, Zhang CY, Yu WD, Gao XD. p-type ZnO films by monodoping of nitrogen and ZnO-based homojunctions. Appl Phys Lett 2004;85: 4070-2. https://doi.org/10.1063/1.1808229.

Crossref Google Scholar
[23]

Bian JM, Li XM, Zhang CY, Chen LD, Yao Q. Synthesis and characterization of two-layer-structured ZnO homojunctions by ultrasonic spray pyrolysis. Appl Phys Lett 2004;84: 3783-5. https://doi.org/10.1063/1.1739280.

Crossref Google Scholar
[24]

Snigurenko D, Kopalko K, Krajewski TA, Jakiela R, Guziewicz E. Nitrogen doped p-type ZnO films and p-n homojunction. Semicond Sci Technol 2015;30: 1-6. https://doi.org/10.1088/0268-1242/30/1/015001.015001.

Crossref Google Scholar
[25]

Bu IYY. Room temperature deposition of graded ZnO homojunction from a single sputter target. Superlattice Microst 2013;64: 213-9. https://doi.org/10.1016/j.spmi.2013.08.018.

Crossref Google Scholar
[26]

Wei ZP, Lu YM, Shen DZ, Zhang ZZ, Yao B, Li BH, Zhang JY, Zhao DX, Fan XW, Tang ZK. Room temperature ZnO blue-violet light-emitting diodes. Appl Phys Lett 2007;90(1-3): 042113. https://doi.org/10.1063/1.2435699.

Crossref Google Scholar
[27]

Kambilafka V, Kostopoulos A, Androulidaki M, Tsagaraki K, Modreanu M, Aperathitis E. Transparent p/n diode device from a single zinc nitride sputtering target. Thin Solid Films 2011;520: 1202-6. https://doi.org/10.1016/j.tsf.2011.06.072.

Crossref Google Scholar
[28]

Stroescu H, Anastasescu M, Preda S, Nicolescu M, Stoica M, Stefan N, Kampylafka V, Aperathitis E, Modreanu M, Zaharescu M, Gartner M. Influence of thermal treatment in N2 atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rfsputtered thin films. Thin Solid Films 2013;541: 121-6. https://doi.org/10.1016/j.tsf.2012.11.135.

Crossref Google Scholar
[29]

Nicolescu M, Anastasescu M, Preda S, Calderon-Moreno JM, Osiceanu P, Gartner M, Teodorescu VS, Maraloiu AV, Kampylafka V, Aperathitis E, Modreanu M. Investigation of microstructural properties of nitrogen doped ZnO thin films formed by magnetron sputtering on silicon substrate. J Optoelectron Adv Mater 2010;12: 1045-51.

Google Scholar
[30]

Liang HW, Lu YM, Shen DZ, Yan JF, Li BH, Zhang JY, Liu YC, Fan XW. Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy. J Cryst Growth 2005;278: 305. https://doi.org/10.1016/j.jcrysgro.2005.01.024.

Crossref Google Scholar
[31]

Zeng YJ, Ye ZZ, Xu WZ, Lu JG, He HP, Zhu LP, Zhao BH, Che Y, Zhang SB. p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth Appl. Phys Lett 2006;88: 262103. https://doi.org/10.1063/1.2217165.

Crossref Google Scholar
[32]

Lu J, Liang Q, Zhang Y, Ye Z, Fujita S. Improved p-type conductivity and acceptor states in N-doped ZnO thin films. J Phys D: Appl Phys 2007;40: 3177. https://doi.org/10.1016/j.tsf.2014.02.109.

Crossref Google Scholar
[33]

Nicolescu M, Anastasescu M, Preda S, Calderon-Moreno JM, Stroescu H, Gartner M, Teodorescu VS, Maraloiu AV, Kampylafka V, Aperathitis E, Modreanu M. Surface topography and optical properties of nitrogen doped ZnO thin films formed by radio frequency magnetron sputtering on fused silica substrates. J Optoelectron Adv Mater 2010;12: 1343-9.

Google Scholar
[34]

Voulgaropoulou P, Dounis S, Kambilafka V, Androulidaki M, RRužinský M, Šály V, Prokein P, Viskadourakis Z, Tsagaraki K, Aperathitis E. Optical properties of zinc nitride thin films fabricated by rf-sputtering from ZnN target. Thin Solid Films 2008;516: 8170-4. https://doi.org/10.1016/j.tsf.2008.04.025.

Crossref Google Scholar
[35]

Kim IY, Shin SW, Gang MG, Lee SH, Gurav KV, Patil PS, Yun JH, Lee JY, Kim JH. Comparative study of quaternary Mg and Group Ⅲ element co-doped ZnO thin films with transparent conductive characteristics. Thin Solid Films 2014;570: 321-5. https://doi.org/10.1016/j.tsf.2014.02.109.

Crossref Google Scholar
[36]

Hamberg I, Granqvist CG, Berggren K-F, Sernelius BE, Engstrom L. Band-gap widening in heavily Sn-doped In203. Phys RevB 1984;30: 3240-9.

Crossref Google Scholar
[37]

Fan JC, Sreekanth KM, Xie Z, Chang SL, Rao KV. p-Type ZnO materials: theory, growth, properties and devices. Prog Mater Sci 2013;58: 874-985. https://doi.org/10.1016/j.pmatsci.2013.03.002.

Crossref Google Scholar
[38]

Wang G, Chu S, Zhan N, Lin Y, Chernyak L, Liu J. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection. Appl Phys Lett 2011;41107: 1-3. https://doi.org/10.1063/1.3551628.

Crossref Google Scholar
[39]
Chiu H-J, Chen T-H, Lai L-W, Lee C-T, Hong J-D, Liu D-S. The achievement of a zinc oxide-based homojunction diode using radio frequency magnetron cosputtering system. J Nanomater 2015. https://doi.org/10.1155/2015/284835. Article ID 284835, 8 pages.
Crossref
[40]
Sze SM. In: Semiconductor devices: physics and technology. J. Wiley & Sons; 1985. p. 70. ISBN: 0-471-87424-8, chap. 3.
[41]

Norton DP, Heo YW, Ivill MP, Ip K, Pearton SJ, Chisholm MF, Steiner T. ZnO: growth, doping & processing. Mater Today 2004;7: 34-40.

Crossref Google Scholar
Journal of Materiomics
Volume 5 Issue 3,
September 2019
Pages 428-435
DOI: 10.1016/j.jmat.2019.02.006
Cite this article:
Kampylafka V, Kostopoulos A, Modreanu M, et al. Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature. Journal of Materiomics, 2019, 5(3): 428-435. https://doi.org/10.1016/j.jmat.2019.02.006
Metrics & Citations  
Article History
Copyright
Rights and Permissions
Return